Nanorod semiconductor layer having flat upper surface, micro-LED including the nanorod semiconductor layer, pixel plate including micro-LED, display device including the pixel plate, and electronic devices including the pixel plate
A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED, a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L 1 , an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D 1 of the flat upper surface satisfies Equation 1. D 1= D −(2× L 1×tan β) <Equation 1>
1. A nanorod semiconductor layer comprising:
a main body; and
an upper end connected to an upper part of the main body,
wherein the upper end comprises:
a first inclined surface;
a second inclined surface; and
a flat upper surface between the first inclined surface and the second inclined surface,
wherein a width of the upper end becomes narrower in an upward direction away from the main body.
2. The nanorod semiconductor layer of claim 1 , wherein the first inclined surface and the second inclined surface comprise a same geometric shape.
3. A micro-LED comprising:
a first semiconductor layer of a first type comprising an n-type or a p-type, the first semiconductor layer comprising a nanorod shape;
a second semiconductor layer of a second type comprising the n-type or the p-type different from the first type, the second semiconductor layer facing the first semiconductor layer; and
an active layer disposed between the first semiconductor layer and the second semiconductor layer,
wherein the first semiconductor layer comprises:
a main body; and
an upper end connected to an upper part of the main body,
wherein the upper end comprises
a first inclined surface;
a second inclined surface; and
a flat upper surface between the first inclined surface and the second inclined surface,
wherein a width of the upper end becomes narrower in an upward direction away from the main body.
4. The micro-LED of claim 3 , wherein the active layer comprises a first compound semiconductor layer.
5. The micro-LED of claim 4 , wherein the active layer further comprises a second compound semiconductor layer on the first compound semiconductor layer.
6. The micro-LED of claim 5 , wherein the first compound semiconductor layer and the second compound semiconductor layer comprise same materials with different composition ratios.
7. The micro-LED of claim 3 , wherein the first inclined surface and the second inclined surface comprise a same geometric shape.
8. The micro-LED of claim 3 , wherein exposed peripheral surfaces of the first semiconductor layer, the second semiconductor layer, and the active layer are covered with an insulating film.
9. A pixel plate comprising a plurality of pixel regions, wherein each of the plurality of pixel regions comprises:
a first subpixel including a first micro-LED according to claim 8 configured to emit a first light;
a second subpixel including a second micro-LED according to claim 8 configured to emit a second light; and
a third subpixel including a third micro-LED according to claim 8 configured to emit a third light,
wherein the first micro-LED, the second micro-LED, and the third micro-LED each comprise a same configuration and a same shape, and
wherein the first micro-LED, the second micro-LED, and the third micro-LED each comprise different materials.
10. The pixel plate of claim 9 , wherein each of the first subpixel, the second subpixel, and the third subpixel comprises
respective two electrodes that are parallel and separated from each other,
wherein the respective two electrodes are connected to each other by a corresponding micro-LED from among the first micro-LED, the second micro-LED, and the third micro-LED.
11. The pixel plate of claim 9 , wherein a number of micro-LEDs included in the first subpixel is different from a number of micro-LEDs included in each of the second subpixel and the third subpixel.
12. The pixel plate of claim 9 , further comprising a plurality of partition walls provided between adjacent subpixels from among the first subpixel, the second subpixel, and the third subpixel.
13. A display device comprising:
a backplane;
a front panel facing the backplane; and
a pixel plate of claim 9 disposed between the backplane and the front panel.
14. An electronic device comprising:
a front panel;
a rear panel facing the front panel;
a pixel plate of claim 9 disposed between the front panel and the rear panel; and
a battery in contact with the rear panel.
15. The electronic device of claim 14 , wherein the rear panel comprises a communication module, and
wherein a camera module is connected to the rear panel.
16. The electronic device of claim 14 , further comprising
a device main body; and
bands connected to either side of the device main body, wherein
the device main body comprises a display area comprising the front panel, the rear panel, the pixel plate, and the battery, and
wherein a camera, a microphone, and a speaker are provided around the display area.
17. The nanorod semiconductor layer of claim 1 , wherein when a thickness of the upper end in the upward direction is L 1 , an inclination angle between the flat upper surface and a surface extending parallel to a surface selected from the first inclined surface and the second inclined surface is β, and a width of the main body is D, a width D 1 of the flat upper surface satisfies the following equation:
D 1= D -(2× L 1× tanβ ).
18. The nanorod semiconductor layer of claim 17 , wherein when a height of the main body is H, an aspect ratio (H/D) of the main body satisfies 0.05<H/D<20.
19. The nanorod semiconductor layer of claim 18 , wherein H satisfies 0.5 μm <H<20 μm.
20. The nanorod semiconductor layer of claim 18 , wherein D satisfies 0.05 μm<D<2 μm.
21. The nanorod semiconductor layer of claim 17 , wherein β is about 52±5°.
22. The nanorod semiconductor layer of claim 17 , wherein the thickness L 1 is about 100 nm or less.
23. The micro-LED of claim 3 , wherein when a thickness of the upper end in the upward direction is L 1 , an inclination angle between the flat upper surface and a surface extending parallel to a surface selected from the first inclined surface and the second inclined surface is β, and a width of the main body is D, a width D 1 of the flat upper surface satisfies the following equation:
D 1= D -(2× L 1× tanβ ).
24. The micro-LED of claim 23 , wherein when a height of the main body is H, an aspect ratio (H/D) of the main body satisfies 0.05<H/D<20.
25. The micro-LED of claim 24 , wherein H satisfies 0.5 μm <H<20 μm.
26. The micro-LED of claim 24 , wherein D satisfies 0.05 μm<D<2 μm.