Systems and methods for organic semiconductor devices with sputtered contact layers
Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.
1. A method for fabricating an organic semiconductor device that includes an organic semiconductor active layer deposited on one or more backside device layers, the method comprising:
applying a buffering transport layer over the organic semiconductor active layer of the organic semiconductor device, wherein the organic semiconductor active layer includes an organic bulk heterojunction absorber layer;
opening a plurality of scribes that extend into the buffering transport layer, the organic semiconductor active layer and the one or more backside device layers; and
sputter-depositing a transparent conductive material layer onto the buffering transport layer and into the plurality of scribes, wherein the transparent conductive material layer within the plurality of scribes electrically connects the transparent conductive material layer deposited onto the buffering transport layer on a first side of each of the plurality of scribes with a back contact layer within the one or more backside device layers on a second side of each of the plurality of scribes.
2. The method of claim 1 , wherein the organic semiconductor active layer comprises either an organic bulk heterojunction structure or a bilayer structure.
3. The method of claim 1 , wherein applying the buffering transport layer comprises applying to the organic semiconductor active layer either a transparent or semi-transparent polymer material, or a transparent or semi-transparent oxide material.
4. The method of claim 1 , wherein applying the buffering transport layer comprises either vapor deposition or solution deposition of the buffering transport layer.
5. The method of claim 1 , wherein sputter-depositing the conductive material layer further comprises:
sputter-depositing a transparent conducting oxide onto the buffering transport layer.
6. The method of claim 1 , further comprising depositing an electrically insulation material deposited into the plurality of scribes.
7. The method of claim 1 , wherein the conductive material layer comprises one of an indium zinc oxide (WO), an indium tin oxide (ITO), an aluminum doped zinc oxide (AZO); or a gallium doped zinc oxide (GZO).
8. The method of claim 1 , further comprising:
sputter-depositing a back contact layer onto a substrate;
depositing a charge transport layer over the back contact layer; and
depositing the organic semiconductor active layer over the charge transport layer.
9. A method for forming an electrical interconnect between organic photovoltaic cells of a photovoltaic device, the method comprising:
forming one or more scribes that extends into a buffering transport layer, an organic semiconductor active layer and a backside collection layer of the photovoltaic device, wherein forming the scribe at least partially separates a first organic photovoltaic cell from a second organic photovoltaic cell, and wherein the organic semiconductor active layer includes an organic bulk heterojunction absorber layer; and
sputter-depositing a transparent electrical contact layer onto the buffering transport layer at the first organic photovoltaic cell and into the scribe electrically connecting the transparent electrical contact layer of the first organic photovoltaic cell to a backside contact layer of the second organic photovoltaic cell.
10. The method of claim 9 , further comprising depositing an electrically insulation material deposited into the one or more scribes.
11. The method of claim 9 , wherein the electrical contact layer comprises one of an indium zinc oxide (IZO), an indium tin oxide (ITO), an aluminum doped zinc oxide (AZO); or a gallium doped zinc oxide (GZO).
12. The method of claim 9 , wherein the organic semiconductor active layer comprises either an organic bulk heterojunction structure or a bilayer structure.
13. The method of claim 9 , further comprising:
applying the buffering transport layer by applying to the organic semiconductor active layer either a transparent or semi-transparent polymer material, or a transparent or semi-transparent oxide material.