IP Library › Granted Patent US 11,495,940
Granted Patent B2
US 11,495,940 · App. 17/110,304 · Granted Nov 8, 2022

Light emitting device, optical device, and measurement device

Inventors: Daisuke Iguchi (Kanagawa, JP); Kazuhiro Sakai (Kanagawa, JP)
Assignee: FUJIFILM Business Innovation Corp.
H01S5/04256H01S5/02255G01S17/894
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Quick Facts
Patent No.
US 11,495,940
App. No.
17/110,304
Granted
Nov 8, 2022
Kind
B2
Abstract

A light emitting device includes a wiring board having a first wiring layer and a second wiring layer adjacent to the first wiring layer via an insulating layer, and a laser having a cathode electrode and an anode electrode, mounted on the wiring board, and driven through low-side driving. The first wiring layer includes a cathode wire connected to the cathode electrode, an anode wire connected to the anode electrode, and a first reference potential wire connected to a reference potential. The second wiring layer includes a second reference potential wire connected to the reference potential. An area of an overlap between the second reference potential wire and the anode wire is larger than an area of an overlap between the second reference potential wire and the first reference potential wire.

Claims (33)

1. A light emitting device comprising:

a wiring board having a first wiring layer and a second wiring layer adjacent to the first wiring layer via an insulating layer; and

a laser having a cathode electrode and an anode electrode, mounted on the wiring board, and driven through low-side driving,

wherein the first wiring layer comprises:

a cathode wire connected to the cathode electrode;

an anode wire connected to the anode electrode; and

a first reference potential wire connected to a reference potential,

wherein the second wiring layer comprises a second reference potential wire connected to the reference potential, and

wherein an area of an overlap between the second reference potential wire and the anode wire is larger than an area of an overlap between the second reference potential wire and the first reference potential wire.

2. The light emitting device according to claim 1 , wherein an area of the anode wire is larger than an area of the first reference potential wire.

3. The light emitting device according to claim 2 , wherein the area of the anode wire is 50% or more as large as an area of the wiring board.

4. The light emitting device according to claim 3 , wherein the area of the anode wire is 75% or more as large as the area of the wiring board.

5. The light emitting device according to claim 4 , wherein a thickness of the insulating layer is 100 μm or less.

6. The light emitting device according to claim 3 , wherein a thickness of the insulating layer is 100 μm or less.

7. The light emitting device according to claim 2 , wherein the area of the anode wire is 75% or more as large as an area of the wiring board.

8. The light emitting device according to claim 7 , wherein a thickness of the insulating layer is 100 μm or less.

9. The light emitting device according to claim 2 , wherein a thickness of the insulating layer is 100 μm or less.

10. The light emitting device according to claim 1 , wherein an area of the anode wire is 50% or more as large as an area of the wiring board.

11. The light emitting device according to claim 10 , wherein the area of the anode wire is 75% or more as large as the area of the wiring board.

12. The light emitting device according to claim 11 , wherein a thickness of the insulating layer is 100 μm or less.

13. The light emitting device according to claim 10 , wherein a thickness of the insulating layer is 100 μm or less.

14. The light emitting device according to claim 1 , wherein an area of the anode wire is 75% or more as large as an area of the wiring board.

15. The light emitting device according to claim 14 , wherein a thickness of the insulating layer is 100 μm or less.

16. The light emitting device according to claim 1 , wherein a thickness of the insulating layer is 100 μm or less.

17. The light emitting device according to claim 1 , wherein the laser is a surface emitting laser element array having a plurality of surface emitting laser elements on a common semiconductor substrate.

18. The light emitting device according to claim 1 , further comprising an optical member that changes at least one of a direction or a divergence angle of light emitted from the laser.

19. An optical device comprising:

the light emitting device according to claim 1 ; and

a light receiver that receives light emitted from the laser of the light emitting device and reflected on a target,

wherein the light receiver outputs a signal corresponding to a period from light emission from the laser to light reception at the light receiver.

20. A measurement device that measures a three-dimensional shape of a target, the measurement device comprising:

the optical device according to claim 19 ; and

a three-dimensional shape determiner that determines the three-dimensional shape of the target based on light emitted from the laser of the optical device, reflected on the target, and received by the light receiver of the optical device.

Assignments (2)
CHANGE OF NAME Recorded May 18, 2021
From: FUJI XEROX CO., LTD.
To: FUJIFILM BUSINESS INNOVATION CORP.
Reel/Frame 056266/0732 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2020
From: IGUCHI, DAISUKE; SAKAI, KAZUHIRO
To: FUJI XEROX CO., LTD.
Reel/Frame 054540/0622 →
Priority Claims (1)
JP JP2020-030317 · Feb 26, 2020 · national
Continuity (1)
Related Publication 20210265815A1 · Aug 26, 2021