Thin films printed with chalcogenide glass inks
A device formation method may include printing a chalcogenide glass ink onto a surface to form a chalcogenide glass layer, where the chalcogenide glass ink comprises chalcogenide glass and a fluid medium. The method may further include sintering the chalcogenide glass layer at a first temperature for a first duration. The method may also include annealing the chalcogenide glass layer at a second temperature for a second duration. A device may include a substrate and a printed chalcogenide glass layer on the substrate, where the printed chalcogenide glass layer includes annealed chalcogenide glass, and where the printed chalcogenide glass layer is free from cracks.
1. A device comprising:
a substrate;
a printed chalcogenide glass layer on the substrate, wherein the printed chalcogenide glass layer includes annealed chalcogenide glass, and wherein the printed chalcogenide glass layer is free from cracks; and
a silver layer positioned on the printed chalcogenide glass layer, wherein a presence of radiation causes at least a portion of the silver layer to diffuse into the printed chalcogenide glass layer, and wherein the silver layer diffusing into the printed chalcogenide glass layer changes an electrical resistance of the printed chalcogenide glass layer.
2. The device of claim 1 , wherein the printed chalcogenide glass layer is transformed from a crystalized condition to an amorphous condition by application of a voltage to melt the printed chalcogenide glass layer followed by quenching as a result of the substrate being at room temperature.
3. The device of claim 1 , wherein the substrate comprises a silicon sublayer and a silicon oxide sublayer.
4. The device of claim 1 , further comprising a nickel layer positioned on the printed chalcogenide glass layer.
5. The device of claim 4 , wherein the silver layer includes silver dots and the nickel layer includes nickel dots.
6. The device of claim 1 , wherein the printed chalcogenide glass layer includes Ge 20 Se 80 or Ge 20 S 80 .
7. A device comprising:
a substrate;
a printed chalcogenide glass layer on the substrate, wherein the printed chalcogenide glass layer includes annealed chalcogenide glass, and wherein the printed chalcogenide glass layer is free from cracks;
a first nickel electrode formed on the substrate and separating the substrate from the printed chalcogenide glass layer; and
a second nickel electrode formed on the printed chalcogenide glass layer, wherein a presence of heat above a threshold temperature causes the printed chalcogenide glass layer to crystalize, and wherein crystallization of the printed chalcogenide glass layer changes an electrical resistance of the printed chalcogenide glass layer.
8. The device of claim 7 , wherein the substrate comprises a silicon sublayer and a silicon oxide sublayer.
9. The device of claim 7 , wherein the printed chalcogenide glass layer is transformed from a crystalized condition to an amorphous condition by application of a voltage to melt the printed chalcogenide glass layer followed by quenching as a result of the substrate being at room temperature.
10. A device comprising:
a substrate, wherein the substrate is a portion of an optical fiber; and
a printed chalcogenide glass layer on the substrate, wherein the printed chalcogenide glass layer includes annealed chalcogenide glass, and wherein the printed chalcogenide glass layer is free from cracks, wherein a presence of heat above a threshold temperature causes the printed chalcogenide glass layer to begin to crystalize, and wherein an optical reflection parameter of printed chalcogenide glass layer changes as a function of an amount of crystallization within the printed chalcogenide glass layer.
11. The device of claim 10 , wherein the optical fiber includes an optical core and cladding surrounding the optical core, wherein the chalcogenide glass is in contact with an output facet of the optical core.
12. The device of claim 11 , wherein the chalcogenide glass coats a portion of an outer surface of the cladding.
13. The device of claim 10 , wherein the printed chalcogenide glass layer is transformed from a crystalized condition to an amorphous condition by application of a voltage to melt the printed chalcogenide glass layer followed by quenching as a result of the substrate being at room temperature.