3D ferroelectric memory

1. A method of forming a memory device, the method comprising:

forming a row of stacks, each stack comprising conductive strips separated by dielectric strips;

selectively etching the conductive strips via trenches between the stacks to create recesses in the stacks;

depositing a data storage film so that a first portion of the data storage film deposits within the recesses in the stacks;

depositing a channel layer after the data storage film, wherein the channel layer deposits over the data storage film;

filling the trenches with a second dielectric;

etching opening through the second dielectric; and

filling the openings with conductive material to form source lines and bit lines.

2. The method of claim 1 , further comprising etching to remove a second portion of the data storage film that deposits in the trenches outside the recesses.

3. The method of claim 1 , further comprising forming intercell dielectric plugs in the trenches before creating the recesses in the stacks.

4. The method of claim 1 , further comprising etching to remove a portion of the channel layer that deposits in the trenches outside the recesses.

5. The method of claim 1 , wherein depositing the channel layer comprises:

depositing a first layer of channel material;

etching to remove channel material that deposits in the trenches outside the recesses; and

depositing a second layer of channel material.

6. A method of forming a memory device, the method comprising:

forming a stack having a plurality of dielectric material layers interleaved with second material layers;

etching a plurality of first trenches in the stack;

forming a plurality of data storage structures in the first trenches, wherein the data storage structures are at levels of the stack corresponding to the second material layers and are separated between adjacent second material layers;

depositing a layer of semiconductor material in the first trenches after forming the plurality of data storage structures; and

forming vertical source lines and bit lines within the first trenches.

7. The method of claim 6 , wherein forming the plurality of data storage structures comprises:

etching to create recesses in sidewalls of the first trenches, wherein the recesses have heights corresponding to the second material layers;

depositing a data storage film in the first trenches; and

etching to separate the data storage film between adjacent second material layers.

8. The method of claim 6 , wherein forming the plurality of data storage structures comprises:

etching to create recesses in sidewalls of the first trenches, wherein the recesses have heights corresponding to the second material layers;

depositing a data storage film in the first trenches; and

etching to separate the data storage film between adjacent second material layers.

9. The method of claim 6 , wherein forming the plurality of data storage structures comprises growing a data storage film by a selective growth process, whereby the data storage film grows from the second material layers but does not grow from the dielectric material layers.

10. The method of claim 6 , further comprising:

etching through the first trenches to remove first portions of the second material layers and create first voids;

filling the first voids with conductive material;

etching a plurality of second trenches in the stack;

etching through the second trenches to remove remaining portions of the second material layers and create second voids; and

filling the second voids with the conductive material.

11. The method of claim 6 , wherein the second material layers comprise metal.

12. The method of claim 6 , further comprising forming periodically spaced conductive plugs in the first trenches prior to forming the plurality of data storage structures.

13. The method of claim 6 , further comprising forming periodically spaced conductive plugs in the first trenches after forming the plurality of data storage structures.

14. The method of claim 6 , wherein forming vertical source lines and bit lines comprises:

filling the trenches with a first dielectric;

etching first holes in the first dielectric;

filling the first holes with a second dielectric;

forming a mask having openings;

etching second holes in one of the first dielectric and the second dielectric through the openings; and

filling the second holes with conductive material.

15. The method of claim 14 , wherein etching the second holes comprises an etch process that is selective between the first dielectric and the second dielectric.

16. The method of claim 15 , wherein two of the second holes are formed through one of the openings by the etch process that is selective.

17. A method of forming a memory device, the method comprising:

forming a stack having dielectric layers interleaved with conductive layers;

etching trenches in the stack;

using a selective etch process to create recesses in sidewalls of the trenches corresponding to the conductive layers;

depositing a data storage film so that a first portion of the data storage film deposits within the recesses;

after depositing the data storage film, depositing a first semiconductor layer so as to line the trenches; and

forming vertical source lines and bit lines within the trenches.

18. The method of claim 17 , further comprising dry etching that removes the data storage film from sidewalls of the dielectric layers.

19. The method of claim 18 , further comprising:

dry etching that removes the first semiconductor layer from sidewalls of the dielectric layers; and

depositing a second semiconductor layer so as to line the trenches.

20. The method of claim 17 , further comprising:

etching to create a staircase pattern on a side of the stack; and

forming vias that land on the conductive layers in the staircase pattern.