Vertical memory devices
A semiconductor device includes a first stack of layers stacked on a substrate. The first stack of layers includes a source connection layer that is formed by replacing source sacrificial layers. The semiconductor device includes a channel structure that extends in the first stack of layers. The channel structure includes a channel layer that is in contact with the source connection layer in the first stack of layers. Further, the semiconductor device includes a shield structure formed in the first stack of layers. The shied structure encloses a stack of layers without the source connection layer.
1. A semiconductor device, comprising:
a substrate;
a first stack of layers including a source connection layer, the first stack of layers being stacked on the substrate along a first direction perpendicular to a main surface of the substrate;
a channel structure configured to extend in the first direction in the first stack of layers, the channel structure including a channel layer that is in contact with the source connection layer in the first stack of layers; and
a shield structure formed in the first stack of layers, the shield structure enclosing a stack of layers without the source connection layer.
2. The semiconductor device of claim 1 , wherein: the source connection layer is formed between the first stack of layers and the substrate.
3. The semiconductor device of claim 1 , wherein: the shield structure is formed between the first stack of layers and the substrate.
4. The semiconductor device of claim 1 , wherein:
a second stack of layers including gate layers and insulating layers, the gate layers and insulating layers being stacked alternatively upon the first stack of layers; and
the channel structure extends in the first direction in the first stack and the second stack of layers.
5. The semiconductor device of claim 1 , wherein: the first stack of layers includes gate layers and insulating layers, the gate layers and the insulating layers are stacked alternatively.
6. The semiconductor device of claim 1 , wherein:
the shield structure is configured to enclose one or more dummy channel structures.
7. The semiconductor device of claim 1 , wherein
the shield structure is disposed between two neighboring gate line cut structures.
8. The semiconductor device of claim 1 , wherein the channel structure includes at least a charge storage layer, a tunneling insulating layer, and a semiconductor layer that extend in the first direction.