Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers;

a first insulator, a charge storage layer, a second insulator and a first semiconductor layer that are disposed in order in the stacked film; and

a plurality of first films disposed between the first insulator and the plurality of insulating layers,

wherein at least one of the first films includes a second semiconductor layer.

2. The device of claim 1 , wherein the at least one of the first films includes a third insulator disposed under the second semiconductor layer, and/or a fourth insulator disposed on the second semiconductor layer.

3. The device of claim 2 , wherein the third insulator is an oxide film, and/or the fourth insulator is an oxide film.

4. The device of claim 2 , wherein

the second semiconductor layer includes silicon, and

the third insulator and/or the fourth insulator includes silicon and oxygen.

5. The device of claim 1 , wherein the first films have annular shapes to surround the first insulator.

6. The device of claim 1 , wherein a width of the first films in a thickness direction of the insulating layers is larger than a thickness of the insulating layers.

7. The device of claim 1 , further comprising:

a first interconnect layer disposed above the stacked film;

a second interconnect layer disposed below the stacked film;

a third interconnect layer disposed below the second interconnect layer; and

a third semiconductor layer disposed on the third interconnect layer and in the second interconnect layer,

wherein the first semiconductor layer is electrically connected to the first interconnect layer, and is electrically connected to the third interconnect layer via the third semiconductor layer.

8. The device of claim 7 , wherein the first interconnect layer is a drain layer, the second interconnect layer is a gate layer, and the third interconnect layer is a source layer.

9. The device of claim 7 , wherein the third semiconductor layer is disposed in the second interconnect layer via a fifth insulator.

10. The device of claim 1 , wherein a thickness of the first films at a certain height becomes thinner as the height becomes lower.

11. The device of claim 1 , wherein

the first films have annular shapes to surround the first insulator, and

a thickness of the first films at a certain height becomes thinner as an inner diameter of the first films at the height becomes smaller.

12. The device of claim 1 , wherein the stacked film includes:

a first region where the first films exist between the first insulator and the insulating layers; and

a second region where none of the first films exist between the first insulator and the insulating layers, the second region being positioned under the first region.