IP Library › Granted Patent US 11,604,391

Granted Patent B2

US 11,604,391 · App. 17/116,731 · Granted Mar 14, 2023

Liquid crystal display device

Inventor: Hajime Kimura (Kanagawa, JP)

Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

G02F1/136286 G02F1/133528 G09G3/20 G09G3/3233 G09G3/3677 G11C19/28 H01L51/0554 G02F1/133638 G09G2300/0408 G09G2300/0417 G09G2300/0847 G09G2310/0254 G09G2310/0267 G09G2310/0286 G09G2310/0291 G09G2310/08 G09G2320/043 H01L51/0575

View Patent ↗

Loading inventors, assignments & file history…

Monitor This Case

Get email alerts when status or documents change.

Order Certified Copies

Most orders are placed with the USPTO same day — all within 24 business hours.

Order via The Patent Place →

Pre-filled with this patent's details

Quick Facts

Patent No.: US 11,604,391
App. No.: 17/116,731
Granted: Mar 14, 2023
Kind: B2

External Links

USPTO Patent Center↗ Full Patent PDF↗

Abstract

To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That is, by changing the level of voltage applied to a first terminal and a second terminal (terminals serving as a source and a drain) every given period, the source and the drain are switched every given period. Specifically, in a portion which successively outputs signals having certain levels (e.g., L-level signals) in a circuit including a transistor, L-level signals having a plurality of different potentials (L-level signals whose potentials are changed every given period) are used as the signals having certain levels.

Claims (71)

1. A semiconductor device comprising:

a first circuit, a second circuit and a third circuit,

wherein each of the first circuit, the second circuit and the third circuit comprises a first transistor to a twelfth transistor,

wherein in the second circuit,

one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, a gate of the fourth transistor, one of a source and a drain of the seventh transistor, a gate of the eighth transistor, a gate of the ninth transistor, and a gate of the eleventh transistor are directly connected to each other;

a gate of the first transistor and a gate of the sixth transistor are directly connected to the first circuit;

a gate of the second transistor is electrically connected to the third circuit;

one of a source and a drain of the third transistor and a gate of the third transistor are electrically connected to each other;

the other of the source and the drain of the third transistor, one of a source and a drain of the fourth transistor, and a gate of the fifth transistor are electrically connected to each other;

one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, a gate of the seventh transistor, one of a source and a drain of the eighth transistor, a gate of the tenth transistor, and a gate of the twelfth transistor are electrically connected to each other;

one of a source and a drain of the ninth transistor and one of a source and a drain of the tenth transistor are directly connected to the first circuit and the third circuit;

one of a source and a drain of the eleventh transistor and one of a source and a drain of the twelfth transistor are directly connected to an output terminal;

the other of the source and the drain of the ninth transistor and the other of the source and the drain of the eleventh transistor are electrically connected to a first wiring;

the other of the source and the drain of the second transistor is electrically connected to a second wiring; and

the other of the source and the drain of the twelfth transistor is electrically connected to a third wiring; and

wherein the first wiring has a function of supplying a clock signal to the second circuit.

2. The semiconductor device according to claim 1 , wherein each of the first transistor to the twelfth transistor comprises an amorphous silicon.

3. A semiconductor device comprising:

a first circuit, a second circuit and a third circuit,

wherein each of the first circuit, the second circuit and the third circuit comprises a first transistor to a twelfth transistor,

wherein in the second circuit,

a gate of the first transistor and a gate of the sixth transistor are electrically connected to the first circuit;

a gate of the second transistor is electrically connected to the third circuit;

one of a source and a drain of the third transistor and a gate of the third transistor are electrically connected to each other;

the other of the source and the drain of the third transistor, one of a source and a drain of the fourth transistor, and a gate of the fifth transistor are electrically connected to each other;

one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, a gate of the seventh transistor, one of a source and a drain of the eighth transistor, a gate of the tenth transistor and a gate of the twelfth transistor are electrically connected to each other;

one of a source and a drain of the ninth transistor and one of a source and a drain of the tenth transistor are directly connected to the first circuit and the third circuit;

one of a source and a drain of the eleventh transistor and one of a source and a drain of the twelfth transistor are directly connected to an output terminal;

the other of the source and the drain of the ninth transistor and the other of the source and the drain of the eleventh transistor are electrically connected to a first wiring;

the other of the source and the drain of the second transistor is electrically connected to a second wiring;

the other of the source and the drain of the twelfth transistor is electrically connected to a third wiring; and

the other of the source and the drain of the fifth transistor and a gate of the third transistor are electrically connected to each other.

4. The semiconductor device according to claim 3 , wherein the first wiring has a function of supplying a clock signal to the second circuit.

5. The semiconductor device according to claim 3 , wherein each of the first transistor to the twelfth transistor comprises an amorphous silicon.

6. A semiconductor device comprising:

a first circuit, a second circuit and a third circuit,

wherein each of the first circuit, the second circuit and the third circuit comprises a first transistor to a twelfth transistor,

wherein in the second circuit,

a gate of the first transistor and a gate of the sixth transistor are electrically connected to the first circuit;

a signal is directly input into the gate of the first transistor and the gate of the sixth transistor from the first circuit;

a gate of the second transistor is electrically connected to the third circuit;

one of a source and a drain of the third transistor and a gate of the third transistor are electrically connected to each other;

the other of the source and the drain of the third transistor, one of a source and a drain of the fourth transistor, and a gate of the fifth transistor are directly connected to each other;

one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, a gate of the seventh transistor, one of a source and a drain of the eighth transistor, a gate of the tenth transistor and a gate of the twelfth transistor are electrically connected to each other;

one of a source and a drain of the ninth transistor and one of a source and a drain of the tenth transistor are electrically connected to the first circuit and the third circuit;

one of a source and a drain of the eleventh transistor and one of a source and a drain of the twelfth transistor are electrically connected to an output terminal;

the other of the source and the drain of the ninth transistor and the other of the source and the drain of the eleventh transistor are electrically connected to a first wiring;

the other of the source and the drain of the second transistor, the other of the source and the drain of the fourth transistor, the other of the source and the drain of the sixth transistor, the other of the source and the drain of the seventh transistor, and the other of the source and the drain of the eighth transistor are electrically connected to a second wiring; and

the other of the source and the drain of the twelfth transistor is electrically connected to a third wiring.

7. The semiconductor device according to claim 6 , wherein the first wiring has a function of supplying a clock signal to the second circuit.

8. The semiconductor device according to claim 6 , wherein each of the first transistor to the twelfth transistor comprises an amorphous silicon.

9. A semiconductor device comprising: