Semiconductor device with a single diffusion break structure having a sidewall aligned with a gate sidewall
A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
1. A semiconductor device, comprising:
a fin-shaped structure extending along a first direction on a substrate;
a first single diffusion break (SDB) structure extending along a second direction on one side of the fin-shaped structure, wherein the first SDB structure comprises a first side contacting the fin-shaped structure and a second side not contacting any fin-shaped structure;
a second SDB structure extending along the second direction on another side of the fin-shaped structure; and
a first gate structure extending along the second direction directly on a top surface and on one side of the fin-shaped structure, wherein the first SDB structure is adjacent to the first gate structure and a sidewall of the first gate structure is aligned with a sidewall of the fin-shaped structure and a sidewall of the first SDB structure at the same time.
2. The semiconductor device of claim 1 , wherein the second SDB structure comprises a third side contacting the fin-shaped structure and a fourth side not contacting any fin-shaped structure.
3. The semiconductor device of claim 1 , comprising:
a second gate structure extending along the second direction on another side of the fin-shaped structure.
4. The semiconductor device of claim 3 , wherein an edge of the first gate structure is aligned with an edge of the fin-shaped structure.
5. The semiconductor device of claim 3 , wherein an edge of the second gate structure is aligned with an edge of the fin-shaped structure.
6. The semiconductor device of claim 1 , wherein a top surface of the substrate directly under the first SDB structure is lower than a top surface of the substrate directly under the fin-shaped structure.
7. The semiconductor device of claim 1 , wherein a top surface of the substrate directly under the second SDB structure is lower than a top surface of the substrate directly under the fin-shaped structure.
8. The semiconductor device of claim 1 , wherein the first direction is orthogonal to the second direction.
9. The semiconductor device of claim 1 , wherein the first SDB structure is not directly under the first gate structure.