Silicon carbide single crystal
A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×10 15 cm −3 or more.
1. A silicon carbide single crystal comprising:
a heavy metal element having a specific gravity higher than a specific gravity of iron; and
a light metal element including boron, wherein
an addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is 1×10 15 cm −3 or more, and
an addition density of the boron is 5.0×10 15 cm −3 or less.
2. The silicon carbide single crystal according to claim 1 , wherein
the addition density of the heavy metal element is 1×10 16 cm −3 or more.
3. The silicon carbide single crystal according to claim 1 , wherein
the addition density of the heavy metal element is 5.0×10 18 cm −3 or less.
4. The silicon carbide single crystal according to claim 1 , wherein
the heavy metal element is tantalum or niobium.
5. The silicon carbide single crystal according to claim 1 , further comprising nitrogen, wherein
an addition density of the nitrogen is 1×10 18 cm −3 or more.
6. The silicon carbide single crystal according to claim 5 , wherein
at a position where the addition density of the heavy metal element is highest, a ratio of the addition density of nitrogen to the addition density of the heavy metal element is 2.0 or more.
7. A silicon carbide single crystal comprising:
a heavy metal element having a specific gravity higher than a specific gravity of iron; and
a light metal element including aluminum, wherein
an addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is 1×10 15 cm −3 or more, and an addition density of the aluminum is 5.0×10 17 cm −3 or less.
8. The silicon carbide single crystal according to claim 7 , wherein
the addition density of the heavy metal element is 1×10 16 cm −3 or more.
9. The silicon carbide single crystal according to claim 7 , wherein
the addition density of the heavy metal element is 5.0×10 18 cm −3 or less.
10. The silicon carbide single crystal according to claim 7 , wherein
the heavy metal element is tantalum or niobium.
11. The silicon carbide single crystal according to claim 7 , further comprising nitrogen, wherein
an addition density of the nitrogen is 1×10 18 cm −3 or more.
12. The silicon carbide single crystal according to claim 11 , wherein
at a position where the addition density of the heavy metal element is highest, a ratio of the addition density of nitrogen to the addition density of the heavy metal element is 2.0 or more.