Initiating media management operation using voltage distribution metrics in memory system

1. A system comprising:

a memory device; and

a processing device, operatively coupled to the memory device, to perform operations comprising:

determining a value of a data state metric associated with data stored on a part of a block of the memory device;

responsive to the value of the data state metric satisfying a first threshold criterion, determining a first voltage distribution metric associated with at least the part of the block, wherein a voltage distribution metric reflects one of a voltage distribution margin, a voltage distribution floor, or a voltage distribution center;

responsive to determining that the first voltage distribution metric satisfies a second threshold criterion, determining a second voltage distribution metric associated with the at least part of the block; and

responsive to determining that the second voltage distribution metric satisfies a third threshold criterion, performing a media management operation to relocate the data to a new block of the memory device.

2. The system of claim 1 , wherein a threshold criterion for the voltage distribution metric is based on a deterioration slope associated with a die.

3. The system of claim 1 , wherein a threshold criterion for the voltage distribution metric is based on an error rate property associated with a wordline group (WLG).

4. The system of claim 1 , wherein the voltage distribution metric is determined using a vectorized read level calibration (vRLC) procedure.

5. The system of claim 1 , wherein the processing device to perform further operations comprising:

performing another media management operation with respect to the block based on an output from a neural network, wherein input values of the neural network comprise the first voltage distribution metric and at least one of a deterioration slope associated with a die, or an error rate property associated with a wordline group (WLG).

6. The system of claim 1 , wherein the media management operation comprises writing data stored at the block to a new block.

7. A method, comprising:

determining, by a processing device, a value of a data state metric associated with data stored on a part of a block of a memory device;

responsive to the value of the data state metric satisfying a first threshold criterion, determining a first voltage distribution metric associated with at least the part of the block, wherein the voltage distribution metric reflects one of a voltage distribution margin, a voltage distribution floor, or a voltage distribution center;

responsive to determining that the first voltage distribution metric satisfies a second threshold criterion, determining a second voltage distribution metric associated with the at least part of the block; and

responsive to determining that the second voltage distribution metric satisfies a third threshold criterion, performing a media management operation to relocate the data to a new block of the memory device.

8. The method of claim 7 , wherein a threshold criterion for the voltage distribution metric is based on a deterioration slope associated with a die.

9. The method of claim 7 , wherein a threshold criterion for the voltage distribution metric is based on an error rate property associated with a wordline group (WLG).

10. The method of claim 7 , wherein the voltage distribution metric is determined using a vectorized read level calibration (vRLC) procedure.

11. The method of claim 7 , further comprising:

performing another management operation with respect to the block based on an output from a neural network, wherein input values of the neural network comprise the first voltage distribution metric and at least one of a deterioration slope associated with a die, or an error rate property associated with a wordline group (WLG).

12. The method of claim 7 , wherein the media management operation comprises writing data stored at the block to a new block.

13. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device operatively coupled to a memory, performs operations comprising:

determining a value of a data state metric associated with data stored on a part of a block of a memory device;

responsive to the value of the data state metric satisfying a first threshold criterion, determining a first voltage distribution metric associated with at least the part of the block, wherein a voltage distribution metric reflects one of a voltage distribution margin, a voltage distribution floor, or a voltage distribution center;

responsive to determining that the first voltage distribution metric satisfies a second threshold criterion, determining second voltage distribution metric associated with the at least part of the block; and

responsive to determining that the second voltage distribution metric satisfies a third threshold criterion, performing a media management operation to relocate the data to a new block of the memory device.

14. The non-transitory computer-readable storage medium of claim 13 , wherein a threshold criterion for the voltage distribution metric is based on a deterioration slope associated with a die.

15. The non-transitory computer-readable storage medium of claim 13 , wherein a threshold criterion for the voltage distribution metric is based on an error rate property associated with a wordline group (WLG).

16. The non-transitory computer-readable storage medium of claim 13 , wherein the voltage distribution metric is determined using a vectorized read level calibration (vRLC) procedure.

17. The non-transitory computer-readable storage medium of claim 13 , wherein the processing device to perform further operations comprising:

performing another media management operation with respect to the block based on an output from a neural network, wherein input values of the neural network comprise the first voltage distribution metric and at least one of a deterioration slope associated with a die, or an error rate property associated with a wordline group (WLG).