Local gate height tuning by CMP and dummy gate design
The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate, the first metal gate stack including a first work function metal (WFM) layer; forming a second metal gate stack in an active device region of the semiconductor substrate, the second metal gate stack including a second WFM layer different than the first WFM layer; and performing a CMP process using a slurry including a charged abrasive nanoparticles. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region causing different polish rates in the active device region and dummy region. After the performing of the CMP process, the first metal gate stack has a first height greater different from a second height of the second metal gate stack.
1. A method, comprising:
providing a semiconductor substrate;
forming a first metal gate stack in a dummy region of the semiconductor substrate, the first metal gate stack including a first work function metal layer;
forming a second metal gate stack in an active device region of the semiconductor substrate, the second metal gate stack including a second work function metal layer different than the first work function metal layer; and
performing a chemical mechanical polishing (CMP) process using a slurry including a charged abrasive nanoparticles, wherein the charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region causing different polish rates in the active device region and dummy region, and wherein after the performing of the CMP process, the first metal gate stack has a first height different from a second height of the second metal gate stack.
2. The method of claim 1 , wherein the performing of the CMP process includes using a slurry including a negatively charged abrasive, wherein the negatively charged abrasive includes a higher concentration in the active device region than in the dummy region causing a faster removal rate in the active device region, and wherein after the performing of the CMP process, the first metal gate stack has a first height greater than a second height of the second metal gate stack.
3. The method of claim 2 , wherein
each of the first and second metal gate stacks includes tungsten as a filling metal;
the first work function metal layer of the first metal gate stack includes titanium nitride with a first volume percentage; and
the second work function metal layer of the second metal gate stack includes titanium nitride with a second volume percentage greater than the first volume percentage.
4. The method of claim 3 , wherein the first height of the first metal gate stack is greater than the second height of the second metal gate stack by a dimension ranging between 1 nm and 3 nm.
5. The method of claim 1 , wherein the performing of the CMP process includes using a slurry including a positively charged abrasive, wherein the positively charged abrasive includes a lower concentration in the active device region than in the dummy region causing a slower removal rate in the active device region, and wherein after the performing of the CMP process, the first metal gate stack has a first height less than a second height of the second metal gate stack.
6. The method of claim 5 , wherein
each of the first and second metal gate stacks includes tungsten as a filling metal;
the first work function metal layer of the first metal gate stack includes titanium nitride with a first volume percentage; and
the second work function metal layer of the second metal gate stack includes titanium nitride with a second volume percentage less than the first volume percentage.
7. The method of claim 6 , wherein the first height of the first metal gate stack is less than the second height of the second metal gate stack by a dimension ranging between 1 nm and 3 nm.
8. The method of claim 1 , wherein the abrasive nanoparticles include zirconium oxide, zirconium nitride or a combination thereof.
9. The method of claim 1 , further comprising
forming a first cut metal gate (CMG) in the dummy region and a second CMG in the active device region, wherein the first and second CMGs are different in composition; and
thereafter performing another CMP process using the slurry including the charged abrasive nanoparticles.
10. A method, comprising:
providing a semiconductor substrate;
forming a first metal gate stack in a dummy region of the semiconductor substrate, the first metal gate stack including a first work function metal layer;
forming a second metal gate stack in an active device region of the semiconductor substrate, the second metal gate stack including a second work function metal layer different than the first work function metal layer; and
performing a chemical mechanical polishing (CMP) process using a slurry including a negatively charged abrasive nanoparticles, wherein the negatively charged abrasive nanoparticles includes a higher concentration in the active device region than in the dummy region causing a faster removal rate in the active device region, and wherein after the performing of the CMP process, the first metal gate stack has a first height greater than a second height of the second metal gate stack.
11. The method of claim 10 , wherein
each of the first and second metal gate stacks includes tungsten as a filling metal;
the first work function metal layer of the first metal gate stack includes titanium nitride with a first volume percentage; and
the second work function metal layer of the second metal gate stack includes titanium nitride with a second volume percentage greater than the first volume percentage.
12. The method of claim 11 , wherein the first height of the first metal gate stack is greater than the second height of the second metal gate stack by a dimension ranging between 1 nm and 3 nm.
13. The method of claim 10 , wherein the negatively charged abrasive nanoparticles include zirconium oxide, zirconium nitride or a combination thereof.
14. The method of claim 10 , further comprising
forming a first cut metal gate (CMG) in the dummy region and a second CMG in the active device region, wherein the first and second CMGs are different in at least one of composition and pattern density; and
thereafter performing another CMP process using the slurry including the negatively charged abrasive nanoparticles.
15. The method of claim 10 , wherein the active device region is surrounded by the dummy region.
16. A method, comprising:
providing a semiconductor substrate;
forming a first metal gate stack in a dummy region of the semiconductor substrate and a first second metal gate stack in an active device region of the semiconductor substrate;
forming first cut metal gates (CMGs) in the dummy region;
forming second CMGs in the active device region, wherein the second CMGs are different from the first CMGs in composition; and
performing a chemical mechanical polishing (CMP) process using a slurry, wherein after the performing of the CMP process, the first metal gate stack has a first height different from a second height of the second metal gate stack.
17. The method of claim 16 , wherein
the first CMGs in the dummy region includes silicon nitride (SiN) with a first pattern density;
the second CMGs in the active device region includes a second pattern density less than the first pattern density;
the slurry has a first polish rate to SiN greater than a second polish rate to silicon oxide (SIO 2 ); and
the first height is less than the second height.
18. The method of claim 16 , wherein
the first CMGs in the dummy region includes SiN with a first pattern density;
the second CMGs in the active device region includes a second pattern density less than the first pattern density;
the slurry has a first polish rate to SiN less than a second polish rate to SiO 2 ; and
the first height is greater than the second height.
19. The method of claim 16 , wherein
the first CMGs in the dummy region includes SiO 2 with a first pattern density;
the second CMGs in the active device region includes a second pattern density less than the first pattern density;
the slurry has a first polish rate to SiN greater than a second polish rate to SI 0 2 ; and
the first height is greater than the second height.
20. The method of claim 16 , wherein
the first CMGs in the dummy region includes SiO 2 with a first pattern density;
the second CMGs in the active device region includes a second pattern density less than the first pattern density;
the slurry has a first polish rate to SiN less than a second polish rate to SiO 2 ; and
the first height is less than the second height.