IP Library › Granted Patent US 11,482,605
Granted Patent B2
US 11,482,605 · App. 17/128,168 · Granted Oct 25, 2022

Work function metal gate device

Inventors: Chih-Wen Huang (Tainan, TW); Shih-An Huang (Tainan, TW)
Assignee: UNITED MICROELECTRONICS CORP.
H01L29/42376H01L21/28088H01L21/28114H01L29/0653H01L29/1095H01L29/4966H01L29/66681H01L29/7816
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Quick Facts
Patent No.
US 11,482,605
App. No.
17/128,168
Granted
Oct 25, 2022
Kind
B2
Abstract

A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.

Claims (34)

1. A work function metal gate device, comprising:

a gate comprising a convex stair-shaped work function metal stack disposed on a substrate, wherein the convex stair-shaped work function metal stack has a symmetrical cross-sectional profile;

a drift region disposed in the substrate below a part of the gate;

a source located in the substrate and a drain located in the drift region beside the gate; and

a first isolation structure disposed in the drift region between the gate and the drain.

2. The work function metal gate device according to claim 1 , wherein the convex stair-shaped work function metal stack has a pyramid stair-shaped cross-sectional profile.

3. The work function metal gate device according to claim 1 , wherein the convex stair-shaped work function metal stack comprises a first stair-shaped work function metal stack and a second stair-shaped work function metal stack conformally covering the first stair-shaped work function metal stack and the substrate.

4. The work function metal gate device according to claim 3 , wherein the conductive type of the first stair-shaped work function metal stack is different from the conductive type of the second stair-shaped work function metal stack.

5. The work function metal gate device according to claim 3 , wherein the first stair-shaped work function metal stack comprises a bottom work function metal layer and a top work function metal layer, wherein two ends of the bottom work function metal layer protrude from the top work function metal layer.

6. The work function metal gate device according to claim 5 , further comprising:

a second isolation structure disposed in the substrate between the gate and the source; and

a gate oxide layer located in the substrate between the first isolation structure and the second isolation structure.

7. The work function metal gate device according to claim 6 , wherein the bottom work function metal layer vertically overlaps a gap between the first isolation structure and the second isolation structure.

8. The work function metal gate device according to claim 6 , further comprising:

a first drift region disposed in the substrate below a part of the gate, wherein the source and the second isolation structure located in the first drift region, and wherein the top work function metal layer vertically overlaps a gap between the drift region and the first drift region.

9. The work function metal gate device according to claim 3 , wherein the first stair-shaped work function metal stack vertically overlaps a part of the first isolation structure.

10. The work function metal gate device according to claim 3 , wherein a sidewall of the first stair-shaped work function metal stack is aligned with a sidewall of the first isolation structure.

11. A work function metal gate device, comprising:

a gate comprising a convex stair-shaped work function metal stack disposed on a substrate;

a drift region disposed in the substrate below a part of the gate;

a source located in the substrate and a drain located in the drift region beside the gate;

a first isolation structure disposed in the drift region between the gate and the drain;

a second isolation structure disposed in the substrate between the gate and the source; and

a gate oxide layer located in the substrate between the first isolation structure and the second isolation structure.

12. The work function metal gate device according to claim 11 , wherein the convex stair-shaped work function metal stack has a pyramid stair-shaped cross-sectional profile.

13. The work function metal gate device according to claim 11 , wherein the convex stair-shaped work function metal stack comprises a first stair-shaped work function metal stack and a second stair-shaped work function metal stack conformally covering the first stair-shaped work function metal stack and the substrate.

14. The work function metal gate device according to claim 13 , wherein the conductive type of the first stair-shaped work function metal stack is different from the conductive type of the second stair-shaped work function metal stack.

15. The work function metal gate device according to claim 13 , wherein the first stair-shaped work function metal stack comprises a bottom work function metal layer and a top work function metal layer, wherein two ends of the bottom work function metal layer protrude from the top work function metal layer.

16. The work function metal gate device according to claim 15 , wherein the bottom work function metal layer vertically overlaps a gap between the first isolation structure and the second isolation structure.

17. The work function metal gate device according to claim 15 , further comprising:

a first drift region disposed in the substrate below a part of the gate, wherein the source and the second isolation structure located in the first drift region, and wherein the top work function metal layer vertically overlaps a gap between the drift region and the first drift region.

18. The work function metal gate device according to claim 13 , wherein the first stair-shaped work function metal stack vertically overlaps a part of the first isolation structure.

19. The work function metal gate device according to claim 13 , wherein a sidewall of the first stair-shaped work function metal stack is aligned with a sidewall of the first isolation structure.

20. The work function metal gate device according to claim 11 , wherein the convex stair-shaped work function metal stack has a symmetrical cross-sectional profile.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2020
From: HUANG, CHIH-WEN; HUANG, SHIH-AN
To: UNITED MICROELECTRONICS CORP.
Reel/Frame 054703/0640 →
Priority Claims (1)
CN 202011244345.3 · Nov 10, 2020 · national
Continuity (1)
Related Publication 20220149171A1 · May 12, 2022