Semiconductor device

1. A semiconductor device for internet of things (IoT), comprising:

a substrate having an array region defined thereon;

a ring of dummy magnetic tunneling junction (MTJ) pattern surrounding the array region, wherein the ring of dummy pattern comprises:

magnetic tunneling junctions (MTJs); and

a ring of metal interconnect pattern overlapping the MTJs and surrounding the array region, wherein the MTJs comprise a first gap therebetween and an edge of the MTJs is aligned with an edge of the ring of metal interconnect pattern.

2. The semiconductor device for IoT of claim 1 , further comprising a gap between the array region and the ring of dummy pattern.

3. The semiconductor device for IoT of claim 1 , wherein the ring of metal interconnect pattern comprises:

a first metal interconnect pattern and a second metal interconnect pattern extending along a first direction; and

a third metal interconnect pattern and a fourth metal interconnect pattern extending along a second direction.

4. The semiconductor device for IoT of claim 3 , wherein the first metal interconnect pattern overlaps the third metal interconnect pattern at a first corner, the first metal interconnect pattern overlaps the fourth metal interconnect pattern at a second corner, the second metal interconnect pattern overlaps the third metal interconnect pattern at a third corner, and the second metal interconnect pattern overlaps the fourth metal interconnect pattern at a fourth corner.

5. The semiconductor device for IoT of claim 4 , wherein one of MTJs overlap the first corner.

6. The semiconductor device for IoT of claim 4 , wherein one of the MTJs overlap the second corner.

7. The semiconductor device for IoT of claim 4 , wherein one of the MTJs overlap the third corner.

8. The semiconductor device for IoT of claim 4 , wherein one of the MTJs overlap the fourth corner.

9. The semiconductor device for IoT of claim 1 , wherein each of the MTJs comprises a square or rectangle according to a top view.