Plasma etch-resistant film and a method for its fabrication
The invention relates to a method for fabricating a plasma etch-resistant film ( 1 ) on a surface of a substrate ( 2 ), wherein the method comprises the step of forming a film comprising an intermediate layer ( 4 ) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer ( 3 ) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.
1. A plasma etch-resistant film on a surface of a substrate, wherein the film comprises an intermediate layer of rare earth metal carbonate, or rare earth metal oxy-carbonate or any mixture thereof deposited on a first layer of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer, and wherein the structure of the first layer is crystalline and the structure of the intermediate layer is amorphous.
2. The film of claim 1 , wherein the rare earth metal is selected from a group consisting of scandium, yttrium, lanthanum, cerium, praseodymium. neodymium, samarium europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.
3. The film of claim 1 , wherein the thickness of the first layer is between 10 and 1000 nm.
4. The film of claim 1 , wherein the thickness of the intermediate layer is between 0.1 and 50 nm.
5. A method of using the plasma etch-resistant film of claim 1 for protecting a surface of a plasma chamber against the detrimental effects of the processing conditions used in the plasma chamber.
6. The film of claim 1 , wherein the thickness of the first layer is between 50 and 500 nm.
7. The film of claim 1 , wherein the thickness of the first layer is between 100 and 300 nm.
8. The film of claim 1 , wherein the thickness of the intermediate layer is between 0.5 and 10 nm.
9. The film of claim 1 , wherein the thickness of the intermediate layer is between 1 and 5 nm.