Display device
A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.
1. A display device comprising:
a thin-film transistor layer disposed on a substrate and comprising thin-film transistors; and
an emission material layer disposed on the thin-film transistor layer, wherein
the emission material layer comprises:
light-emitting elements each including a first light-emitting electrode, an emissive layer, and a second light-emitting electrode;
light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer, and a second light-receiving electrode; and
a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements, and
the light-receiving elements are disposed on the first bank, wherein
the emission material layer comprises a light-receiving connection electrode, and
the light-receiving connection electrode and the first light-emitting electrode are disposed on a same layer and include a same material.
2. The display device of claim 1 , wherein the emission material layer further comprises:
a second bank disposed on the first bank; and
a third bank disposed on the light-receiving elements.
3. The display device of claim 2 , wherein
the first light-receiving electrode is disposed on the first bank,
the light-receiving semiconductor layer is disposed on the first light-receiving electrode, and
the second light-receiving electrode is disposed on the light-receiving semiconductor layer and the second bank.
4. The display device of claim 3 , wherein
the second light-receiving electrode is electrically connected to the light-receiving connection electrode through a contact hole that penetrates the first bank and the second bank and exposes the light-receiving connection electrode.
5. The display device of claim 2 , wherein
the emissive layer is disposed on the first light-emitting electrode, and
the second light-emitting electrode is disposed on the emissive layer and the third bank.
6. The display device of claim 1 , wherein the light-receiving semiconductor layer comprises:
an n-type semiconductor layer electrically connected to the first light-receiving electrode;
a p-type semiconductor layer electrically connected to the second light-receiving electrode; and
an i-type semiconductor layer disposed between the first light-receiving electrode and the second light-receiving electrode in a thickness direction of the substrate.
7. The display device of claim 6 , wherein
each of the i-type semiconductor layer and the n-type semiconductor layer comprises amorphous silicon carbide (a-SiC) or amorphous silicon germanium (a-SiGe), and
the p-type semiconductor layer comprises amorphous silicon (a-Si).
8. The display device of claim 6 , wherein at least one of the first light-receiving electrode, the p-type semiconductor layer, the i-type semiconductor layer, the n-type semiconductor layer and the second light-receiving electrode includes an uneven surface.
9. The display device of claim 1 , wherein the light-receiving semiconductor layer comprises:
an i-type semiconductor layer electrically connected to the first light-receiving electrode; and
a p-type semiconductor layer electrically connected to the second light-receiving electrode.
10. The display device of claim 9 , wherein
the i-type semiconductor layer comprises amorphous silicon carbide (a-SiC) or amorphous silicon germanium (a-SiGe), and
the p-type semiconductor layer comprises amorphous silicon (a-Si).
11. The display device of claim 1 , wherein the first light-emitting electrode does not overlap the first light-receiving electrode, the light-receiving semiconductor layer, and the second light-receiving electrode in a thickness direction of the substrate.
12. The display device of claim 1 , wherein the second light-emitting electrode overlaps the first light-receiving electrode, the light-receiving semiconductor layer, and the second light-receiving electrode in a thickness direction of the substrate.
13. The display device of claim 1 , wherein
the first light-emitting electrode and the first light-receiving electrode comprise an opaque conductive material, and
the first light-receiving electrode and the second light-receiving electrode comprise a transparent conductive material.
14. The display device of claim 1 , wherein the first light-emitting electrode, the second light-emitting electrode, the first light-receiving electrode, and the second light-receiving electrode comprise a transparent conductive material.
15. The display device of claim 1 , wherein
the emission material layer comprises a reflective electrode disposed on the second light-emitting electrode and in the emission area,
the reflective electrode comprises an opaque material.
16. The display device of claim 1 , wherein the emission material layer comprises a transmissive area that does not overlap the emission area of each of the light-emitting elements in a thickness direction of the substrate.
17. The display device of claim 16 , wherein a light-receiving area of each of the light-receiving elements is located in the transmissive area.
18. The display device of claim 1 , further comprising:
an encapsulation layer disposed on the emission material layer; and
a reflective layer disposed on the encapsulation layer and not overlapping the emission area of each of the light-emitting elements and a light-receiving area of each of the light-receiving elements in a thickness direction of the substrate.
19. The display device of claim 1 , further comprising:
an encapsulation layer disposed on the emission material layer; and
a reflective layer disposed on the encapsulation layer and not overlapping the emission area of each of the light-emitting elements,
wherein the reflective layer overlaps a light-receiving area of each of the light-receiving elements in a thickness direction of the substrate.
20. A display device comprising:
a thin-film transistor layer disposed on a substrate and comprising thin-film transistors;
an emission material layer disposed on the thin-film transistor layer;
an encapsulation layer disposed on the emission material layer; and
a reflective layer disposed on the encapsulation layer and not overlapping the emission area of each of the light-emitting elements, wherein
the emission material layer comprises:
light-emitting elements each including a first light-emitting electrode, an emissive layer, and a second light-emitting electrode;
light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer, and a second light-receiving electrode; and
a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements, and
the light-receiving elements are disposed on the first bank, and
wherein the reflective layer overlaps a light-receiving area of each of the light-receiving elements in a thickness direction of the substrate, and
wherein the reflective layer comprises:
a first reflective layer not overlapping the light-receiving area of each of the light-receiving elements in the thickness direction of the substrate; and
a second reflective layer overlapping the light-receiving area of each of the light-receiving elements in the thickness direction of the substrate.
21. The display device of claim 20 , wherein a thickness of the first reflective layer is larger than a thickness of the second reflective layer.
22. The display device of claim 1 , further comprising:
an encapsulation layer disposed on the emission material layer; and
a sensor electrode layer disposed on the encapsulation layer and comprising sensor electrodes.
23. The display device of claim 22 , wherein the sensor electrode layer comprises:
a light-blocking electrode disposed on the encapsulation layer;
a first sensor insulating layer disposed on the light-blocking electrode; and
a second sensor insulating layer disposed on the sensor electrodes that are disposed on the first sensor insulating layer.
24. The display device of claim 22 , further comprising:
a polarizing film disposed on the sensor electrode layer; and
a cover window disposed on the polarizing film,
wherein the polarizing film comprises a light-transmitting area overlapping the light-receiving elements in a thickness direction of the substrate.
25. The display device of claim 1 , wherein the substrate is bent with a predetermined curvature.
26. The display device of claim 1 , further comprising:
a first roller that rolls the substrate;
a housing in which the first roller is accommodated; and
a transmission window overlapping the first roller in a thickness direction of the substrate.
27. The display device of claim 26 , wherein the substrate is rolled around the first roller and the light-receiving elements overlap the transmission window in the thickness direction of the substrate.
28. A display device comprising:
a thin-film transistor layer comprising thin-film transistors disposed on a substrate; and
an emission material layer disposed on the thin-film transistor layer and including light-emitting elements, wherein
the thin-film transistor layer comprises:
an active layer of the thin-film transistors;
a gate insulating layer disposed on the active layer;
a gate electrode of the thin-film transistors disposed on the gate insulating layer;
a first interlayer dielectric layer disposed on the gate electrode;
light-receiving elements disposed on the first interlayer dielectric layer;
a second interlayer dielectric layer disposed on the first interlayer dielectric layer;
a source electrode and a drain electrode of each of the thin-film transistors disposed on the second interlayer dielectric layer; and
a light-receiving connection electrode connected to a light-receiving element of the light-receiving elements and disposed on the second interlayer dielectric layer, and
the light-receiving connection electrode, the source electrode, and the drain electrode are disposed on a same layer and include a same material.
29. The display device of claim 28 , wherein
each of the light-receiving elements comprises:
a first light-receiving electrode disposed on the first interlayer dielectric layer;
a light-receiving semiconductor layer disposed on the first light-receiving electrode; and
a second light-receiving electrode disposed on the light-receiving semiconductor layer.
30. The display device of claim 29 , wherein the light-receiving semiconductor layer comprises:
an n-type semiconductor layer electrically connected to the first light-receiving electrode;
a p-type semiconductor layer electrically connected to the second light-receiving electrode; and
an i-type semiconductor layer disposed between the first light-receiving electrode and the second light-receiving electrode in a thickness direction of the substrate.
31. The display device of claim 30 , wherein each of the active layer and the gate electrode overlaps the first light-receiving electrode, the light-receiving semiconductor layer, and the second light-receiving electrode in the thickness direction of the substrate.
32. The display device of claim 30 , wherein one of the source electrode and the drain electrode is electrically connected to the second light-receiving electrode through a contact hole that penetrates the second interlayer dielectric layer and exposes the second light-receiving electrode.
33. The display device of claim 28 ,
wherein the light-receiving element is disposed on the second interlayer dielectric layer.
34. The display device of claim 28 ,
wherein each of the light-receiving elements comprises:
a light-receiving gate electrode disposed on the first interlayer dielectric layer;
a light-receiving semiconductor layer disposed on the second interlayer dielectric layer; and
a light-receiving source electrode and a light-receiving drain electrode disposed on the light-receiving semiconductor layer.
35. The display device of claim 34 , wherein the light-receiving semiconductor layer comprises an oxide semiconductor material.
36. The display device of claim 34 , wherein each of the active layer and the gate electrode overlaps the light-receiving gate electrode and the light-receiving semiconductor layer in a thickness direction of the substrate.