3D DRAM with multiple memory tiers and vertically extending digit lines
Some embodiments include an integrated assembly having a memory array over a base. The memory array includes a three-dimensional arrangement of memory cells. Sense amplifiers are associated with the base and are directly under the memory array. Vertically-extending digit lines pass through the arrangement of the memory cells and are coupled with the sense amplifiers. Some embodiments include an integrated assembly having a memory bank containing 64 memory chunks arranged in a 16×4 configuration. Some embodiments include an integrated assembly having a memory bank which contains 512 megabytes divided amongst 64 memory chunks which each have 8 megabytes. The 64 memory chunks are arranged in a configuration having multiple rows which each contain a two or more of the memory chunks.
1. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section; and
wherein the memory cells include horizontally-extending access devices coupled with storage elements.
2. The integrated assembly of claim 1 wherein the memory array includes 128 vertically-stacked tiers of the memory cells and wherein the memory array comprises 128 wordlines associated with each of the individual tiers of the memory cells.
3. The integrated assembly of claim 1 wherein the digit lines are subdivided amongst comparative sets, with each of the comparative sets comprising a first comparative digit line and a second comparative digit line comparatively coupled to the first comparative digit line through one of the sense amplifiers.
4. The integrated assembly of claim 3 wherein multiple of the comparative sets of the digit lines are coupled with a single one of the sense amplifiers.
5. The integrated assembly of claim 1 wherein the access devices are the transistors.
6. The integrated assembly of claim 1 wherein the storage elements are capacitors.
7. The integrated assembly of claim 1 wherein the storage elements comprise at least one of the following:
resistive-memory devices, conductive-bridging devices, phase-change-memory devices, and programmable metallization cells.
8. The integrated assembly of claim 1 wherein the vertically-extending digit lines extend directly through source/drain regions of transistors in the memory cells.
9. The integrated assembly of claim 1 further comprising a conductive plate extending vertically along the three-dimensional arrangement of memory cells.
10. The integrated assembly of claim 9 wherein the conductive plate is configured to drain excess carriers from the channel regions of transistors.
11. The integrated assembly of claim 1 wherein an entirety of the structure for the vertically-extending digit lines extend only vertically.
12. The integrated assembly of claim 1 further comprising a conductive plate that is a separate structure from the structure of the storage elements.
13. The integrated assembly of claim 1 further comprising a conductive plate spaced from the source/drain regions.
14. The integrated assembly of claim 1 wherein the storage elements are spaced from the source/drain regions.
15. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
a channel region between the source/drain regions and comprising at least two sides, a gate region operatedly adjacent only one side of the channel region;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section; and
wherein the memory array includes 128 vertically-stacked tiers of the memory cells and wherein the memory array comprises 128 wordlines associated with each of the individual tiers of the memory cells.
16. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section; and
wherein the vertically-extending digit lines extend directly through source/drain regions of transistors in the memory cells.
17. The integrated assembly of claim 16 further comprising:
a conductive plate coupled to the memory cells; and
storage elements coupled to the memory cells, the storage elements being separate structures from the conductive plate.
18. The integrated assembly of claim 16 further comprising a conductive plate spaced from the source/drain regions having the vertically-extending digit lines.
19. The integrated assembly of claim 16 wherein the storage elements are spaced from the source/drain regions.
20. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section;
a conductive plate extending vertically along the three-dimensional arrangement of memory cells; and
storage elements coupled with the memory cells, the storage elements being separate structures from the conductive plate.
21. The integrated assembly of claim 20 wherein the conductive plate is configured to drain excess carriers from the channel regions of transistors.
22. The integrated assembly of claim 20 wherein the conductive plate is spaced from the source/drain regions.
23. The integrated assembly of claim 20 further comprising storage elements that are spaced from the source/drain regions.
24. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section; and
wherein an entirety of the structure for the vertically-extending digit lines extend only vertically.
25. The integrated assembly of claim 24 further comprising;
a conductive plate; and
storage elements that are separate structures from the conductive plate.
26. The integrated assembly of claim 24 further comprising a conductive plate spaced from the source/drain regions.
27. The integrated assembly of claim 24 further comprising storage elements that are spaced from the source/drain regions.
28. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section; and
wherein the digit lines are subdivided amongst comparative sets, with each of the comparative sets comprising a first comparative digit line and a second comparative digit line comparatively coupled to the first comparative digit line through one of the sense amplifiers.
29. The integrated assembly of claim 28 wherein multiple of the comparative sets of the digit lines are coupled with a single one of the sense amplifiers.
30. The integrated assembly of claim 28 further comprising;
a conductive plate; and
storage elements that are separate structures from the conductive plate.
31. The integrated assembly of claim 28 further comprising a conductive plate spaced from the source/drain regions.
32. The integrated assembly of claim 28 further comprising storage elements that are spaced from the source/drain regions.
33. An integrated assembly, comprising:
a memory array over a base; the memory array comprising a three-dimensional arrangement of memory cells;
sense amplifiers associated with the base and being directly under the memory array;
vertically-extending digit lines passing through source/drain regions of the memory cells and being coupled with the sense amplifiers;
a channel region between the source/drain regions and comprising at least two sides, a gate region operatedly adjacent only one side of the channel region;
wherein each source/drain region comprises an area in a horizontal cross section substantially larger than an area of each digit line in the horizontal cross section;
wherein the memory cells include horizontally-extending access devices coupled with storage elements; and
wherein the memory array includes 128 vertically-stacked tiers of the memory cells and wherein the memory array comprises 128 wordlines associated with each of the individual tiers of the memory cells.