Embedding sensors in 3D-printed silicon carbide
An improved method for embedding one or more sensors in SiC is provided. The method includes depositing a binder onto successive layers of a SiC powder feedstock to produce a dimensionally stable green body have a true-sized cavity. A sensor component is then press-fit into the true-sized cavity. Alternatively, the green body is printed around the sensor component. The assembly (the green body and the sensor component) is heated within a chemical vapor infiltration (CVI) chamber for debinding, and a precursor gas is introduced for densifying the SiC matrix material. During infiltration, the sensor component becomes bonded to the densified SiC matrix, the sensor component being selected to be thermodynamically compatible with CVI byproducts at elevated temperatures, including temperatures in excess of 1000° C.
1. A method for manufacturing an embedded sensor, the method comprising:
providing a powder feedstock of silicon carbide;
selectively depositing a binding agent onto successive layers of the powder feedstock according to a binder-jet printing process to produce a three-dimensional green body having a silicon carbide matrix, the green body defining a channel therein;
inserting a sensor component within the channel, the channel being open to an exterior of the green body; and
after inserting the sensor component within the channel, heat treating the green body to remove the binding agent and densifying the silicon carbide matrix according to a chemical vapor infiltration process, wherein the densified silicon carbide matrix includes a substantially pure silicon carbide microstructure.
2. The method of claim 1 wherein the sensor component is formed from metal or metal alloy and includes Mo, Nb, Ta, W, Pt, or Au.
3. The method of claim 1 wherein the sensor component includes an optical fiber.
4. The method of claim 1 wherein the sensor component includes a sheath, the method further including inserting a sensor element therein after densifying the silicon carbide matrix according to the chemical vapor infiltration process.
5. The method of claim 1 wherein densifying the silicon carbide matrix according to the chemical vapor infiltration process includes positioning the green body within a reactor vessel and introducing therein a precursor gas including silicon and a hydrocarbon while at a temperature of between 850° C. and 1300° C.
6. The method of claim 5 wherein the precursor gas includes methyltrichlorosilane (MTS).
7. A method for manufacturing an embedded sensor, the method comprising:
providing a powder feedstock of silicon carbide;
selectively depositing a binding agent onto successive layers of the powder feedstock according to a binder-jet printing process to produce a three-dimensional green body having a silicon carbide matrix, the green body defining a cavity therein;
positioning a sensor component within the cavity, the cavity being closed to an exterior of the green body; and
after positioning the sensor component within the cavity, heat treating the green body to remove the binding agent and densifying the silicon carbide matrix according to a chemical vapor infiltration process, wherein the densified silicon carbide matrix includes a substantially pure silicon carbide microstructure.
8. The method of claim 7 wherein the sensor component is formed from metal or metal alloy and includes Mo, Nb, Ta, W, Pt, or Au.
9. The method of claim 7 wherein the sensor component includes an optical fiber.
10. The method of claim 7 wherein positioning a sensor component within the cavity includes binder-jet printing the green around at least a portion of the sensor component.
11. The method of claim 7 wherein positioning a sensor component within the cavity includes forming a cavity during a first portion of the binder-jet printing process, inserting the sensor component within the cavity, and encapsulating sensor component within the cavity during a second portion of the binder-jet printing process.
12. The method of claim 7 wherein densifying the silicon carbide matrix according to a chemical vapor infiltration process includes positioning the green body within a reactor vessel and introducing therein a precursor gas including silicon and a hydrocarbon while at a temperature of between 850° C. and 1300° C.
13. The method of claim 12 wherein the precursor gas includes methyltrichlorosilane (MTS).