METHOD OF QUALITY DETERMINING OF DEPOSITION MASK, METHOD OF MANUFACTURING DEPOSITION MASK, METHOD OF MANUFACTURING DEPOSITION MASK DEVICE, METHOD OF SELECTING DEPOSITION MASK AND DEPOSITION MASK
A method of quality determination of a deposition mask according to the present disclosure includes: a measuring step that measures a dimension X 1 from a P 1 point to a Q 1 point, and a dimension X 2 from a P 2 point to a Q 2 point; and a determining step that determines a quality of a deposition mask, based on the dimension X 1 and the dimension X 2 measured in the measuring step.
1 . A method of quality determination of a deposition mask for determining a quality of a deposition mask extending in a first direction, the deposition mask comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; the method comprising:
a measuring step that measures a dimension X 1 from the P 1 point to the Q 1 point, and a dimension X 2 from the P 2 point to the Q 2 point; and
a determining step that determines a quality of the deposition mask, based on the dimension X 1 and the dimension X 2 measured in the measuring step.
2 . The method of quality determination of a deposition mask according to claim 1 , wherein
the determining step determines whether an equation below is satisfied:
α
X
-
X
1
+
X
2
2
≤
α
X
15
×
10
-
3
_
in which α X represents a design value of the dimension X 1 and the dimension X 2 .
3 . The method of quality determination of a deposition mask according to claim 1 , wherein:
the deposition mask has a plurality of through holes; and
the determining step determines whether an equation below is satisfied:
X
1
-
X
2
≤
α
X
10
×
α
Y
W
Y
×
10
-
3
_
in which α X represents a design value of the dimension X 1 and the dimension X 2 , α Y represents a design value of a dimension from the P 1 point to the P 2 point and a dimension from the Q 1 point to the Q 2 point, and W Y represents a maximum value of a distance between center points of the two through holes in the second direction.
4 . The method of quality determination of a deposition mask according to claim 1 , wherein
the P 1 point and the P 2 point are intended to be symmetrically arranged with respect to the first center axis line during deposition, and the Q 1 point and the Q 2 point are intended to be symmetrically arranged with respect to the first center axis line during deposition.
5 . The method of quality determination of a deposition mask according to claim 1 , wherein:
the P 1 point and the P 2 point are arranged on one side of a second center axis line arranged at a center position of the first direction; and
the Q 1 point and the Q 2 point are arranged on the other side of the second center axis line.
6 . The method of quality determination of a deposition mask according to claim 5 , wherein
the P 1 point and the Q 1 point are intended to be symmetrically arranged with respect to the second center axis line during deposition, and the P 2 point and the Q 2 point are intended to be symmetrically arranged with respect to the second center axis line during deposition.
7 . A method of manufacturing a deposition mask comprising:
a step of preparing a deposition mask; and
a step of determining a quality of the deposition mask by the method of quality determination of a deposition mask according to claim 1 .
8 . A method of manufacturing a deposition mask extending in a first direction, the method comprising:
a step of supplying an elongated metal plate extending in a strip shape;
a step of etching the metal plate by a photolithographic technique to form a first recess in the metal plate from a first surface side; and
a step of etching the metal plate by the photolithography technique to form a second recess in the metal plate from the second surface-side,
the deposition mask comprises:
a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction;
a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and
a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction;
wherein the deposition mask satisfies an equation below:
α
X
-
X
1
+
X
2
2
≤
α
X
15
×
10
-
3
_
in which X 1 represents a dimension from the P 1 point to the Q 1 point, X 2 represents a dimension from the P 2 point to the Q 2 point, and α X represents a design value of the dimension X 1 and the dimension X 2 .
9 . The method of manufacturing a deposition mask according to claim 8 , wherein:
the deposition mask has a plurality of through holes formed by communicating the first recess and the second recess with each other; and
wherein the deposition mask satisfies an equation below:
X
1
-
X
2
≤
α
X
10
×
α
Y
W
Y
×
10
-
3
_
in which α X represents a design value of the dimension X 1 and the dimension X 2 , α Y represents a design value of a dimension from the P 1 point to the P 2 point and a dimension from the Q 1 point to the Q 2 point, and W Y represents a maximum value of a distance between center points of the two through holes in the second direction.
10 . A method of manufacturing a deposition mask extending in a first direction, the method comprising:
a step of supplying an elongated metal plate extending in a strip shape;
a step of etching the metal plate by a photolithographic technique to form a first recess in the metal plate from a first surface side; and
a step of etching the metal plate by the photolithography technique to form a second recess in the metal plate from the second surface side,
the deposition mask comprises:
a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction;
a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction;
a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; and
a plurality of throughholes formed by communicating the first recess and the second recess with each other,
wherein the deposition mask satisfies an equation below:
X
1
-
X
2
≤
α
X
10
×
α
Y
W
Y
×
10
-
3
_
in which X 1 represents a dimension from the P 1 point to the Q 1 point X 2 represents a dimension from the P 2 point to the Q 2 point α X represents a design value of the dimension X 1 and the dimension X 2 , α Y represents a design value of a dimension from the P 1 point to the P 2 point and a dimension from the Q 1 point to the Q 2 point, and W Y represents a maximum value of a distance between center points of two through holes in the second direction.
11 . A method of manufacturing a deposition mask device comprising:
a step of preparing the deposition mask by the method of manufacturing a deposition mask according to claim 7 ; and
a step of applying a tensile force to the deposition mask in the first direction and stretching the deposition mask on a frame.
12 . A method of selecting a deposition mask extending in a first direction, the deposition mask comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; the method comprising:
a measuring step that measures a dimension X 1 from the P 1 point to the Q 1 point, and a dimension X 2 from the P 2 point to the Q 2 point; and
a selecting step that selects the deposition mask wherein the dimension X 1 and the dimension X 2 measured in the measuring step satisfy an equation below:
α
X
-
X
1
+
X
2
2
≤
α
X
15
×
10
-
3
_
in which α X represents a design value of the dimension X 1 and the dimension X 2 .
13 . A method of selecting a deposition mask extending in a first direction and having a plurality of through holes, the deposition mask comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; the method comprising:
a measuring step that measures a dimension X 1 from the P 1 point to the Q 1 point, and a dimension X 2 from the P 2 point to the Q 2 point; and
a selecting step that selects the deposition mask wherein the dimension X 1 and the dimension X 2 measured in the measuring step satisfy an equation below:
X
1
-
X
2
≤
α
X
10
×
α
Y
W
Y
×
10
-
3
_
in which α X represents a design value of the dimension X 1 and the dimension X 2 , α Y represents a design value of a dimension from the P 1 point to the P 2 point and a dimension from the Q 1 point to the Q 2 point, and W Y represents a maximum value of a distance between center points of two through holes in the second direction.
14 . A deposition mask extending in a first direction, comprising:
a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction;
a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and
a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction;
wherein the deposition mask satisfies an equation below:
α
X
-
X
1
+
X
2
2
≤
α
X
15
×
10
-
3
_
in which X 1 represents a dimension from the P 1 point to the Q 1 point, X 2 represents a dimension from the P 2 point to the Q 2 point, and α X represents a design value of the dimension X 1 and the dimension X 2 .
15 . A deposition mask extending in a first direction and having a plurality of through holes, comprising:
a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction;
a P 1 point and a Q 1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and
a P 2 point and a Q 2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction;
wherein the deposition mask satisfies an equation below:
X
1
-
X
2
≤
α
X
10
×
α
Y
W
Y
×
10
-
3
_
in which X 1 represents a dimension from the P 1 point to the Q 1 point, X 2 represents a dimension from the P 2 point to the Q 2 point, α X represents a design value of the dimension X 1 and the dimension X 2 , α Y represents a design value of a dimension from the P 1 point to the P 2 point and a dimension from the Q 1 point to the Q 2 point, and W Y represents a maximum value of a distance between center points of two through holes in the second direction.