Low temperature graphene growth
Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.
1. A method of semiconductor processing, comprising:
delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein a flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor is maintained greater than or about 2:1;
generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber;
forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber, wherein the substrate is maintained at a temperature below or about 600° C.; and
halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.
2. The method of semiconductor processing of claim 1 , wherein the plasma comprises a capacitively-coupled plasma.
3. The method of semiconductor processing of claim 2 , wherein a processing chamber pressure is maintained above or about 3 Torr.
4. The method of semiconductor processing of claim 1 , further comprising:
subsequent a period of time after halting flow of the carbon-containing precursor, re-starting flow of the carbon-containing precursor; and
forming an additional layer of graphene on the substrate.
5. The method of semiconductor processing of claim 1 , wherein the substrate comprises a metal or a dielectric material.
6. The method of semiconductor processing of claim 1 , wherein a plasma power is maintained below or about 1000 W during generation of the plasma.
7. The method of semiconductor processing of claim 1 , further comprising:
subsequent halting flow of the carbon-containing precursor, etching the layer of graphene formed on the substrate with plasma effluents of the hydrogen-containing precursor.
8. The method of semiconductor processing of claim 1 , wherein the carbon-containing precursor comprises a hydrocarbon.
9. The method of claim 1 , wherein the hydrogen-containing precursor comprises diatomic hydrogen.