Semiconductor device including multilayer stack including seed layer and high-k dielectric layer
A semiconductor device may include: a first electrode; a second electrode; and a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer, wherein each of the seed layer and the high-k dielectric layer may have a rocksalt crystal structure, and wherein the high-k dielectric layer may exhibit a dielectric constant (k) of fifty (50) or higher.
1. A semiconductor device, comprising:
a first electrode;
a second electrode; and
a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer,
wherein each of the seed layer and the high-k dielectric layer has a rocksalt crystal structure,
wherein the high-k dielectric layer exhibits a dielectric constant (k) of fifty (50) or higher,
wherein the multilayer stack further includes an additional high-k dielectric layer disposed over the high-k dielectric layer, and
wherein the additional high-k dielectric layer exhibits a dielectric constant (k) lower than the high-k dielectric layer.
2. The semiconductor device of claim 1 , wherein the seed layer includes a first seed layer and a second seed layer, wherein the first seed layer includes magnesium oxide (MgO) having a rocksalt crystal structure, and the second seed layer is disposed over the first seed layer and includes beryllium oxide (BeO) having a rocksalt crystal structure.
3. The semiconductor device of claim 1 , wherein the seed layer includes beryllium-magnesium oxide (BexMg1-xO, 0<x<0.5) having a rocksalt crystal structure.
4. The semiconductor device of claim 1 , wherein the seed layer exhibits a dielectric constant (k) of fifteen (15) to twenty (20).
5. The semiconductor device of claim 1 , wherein the high-k dielectric layer includes BeO having a rocksalt crystal structure that is stable under room temperature and atmospheric pressure.
6. The semiconductor device of claim 1 , wherein the high-k dielectric layer includes a single-layer structure or a multilayer structure containing two or more layers,
wherein, when the high-k dielectric layer includes the multilayer structure, each layer included in the multilayer structure includes BeO having a rocksalt crystal structure, and
wherein the high-k dielectric layer including the multilayer structure has a thickness greater than the high-k dielectric layer including the single-layer structure.
7. The semiconductor device of claim 1 , further comprising an interface layer disposed between the second electrode and the multilayer stack.
8. A semiconductor device, comprising:
a first electrode;
a second electrode; and
a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer structure,
wherein the high-k dielectric layer structure includes at least two high-k dielectric layers and at least one strain applying layer,
wherein the multilayer stack further includes an additional high-k dielectric layer disposed over the high-k dielectric layer that is adjacent to the second electrode from among the at least two high-k dielectric layers,
wherein the additional high-k dielectric layer exhibits a dielectric constant (k) that is lower than the dielectric constant (k) of the at least two high-k dielectric layers, and
wherein the strain applying layer is interposed between adjacent high-k dielectric layers.
9. The semiconductor device of claim 8 , wherein the strain applying layer is configured to stabilize a rocksalt crystal structure of the at least two high-k dielectric layers by applying strain to the at least two high-k dielectric layers.
10. The semiconductor device of claim 8 , wherein the strain applying layer includes magnesium oxide (MgO), beryllium-magnesium oxide (BexMg1-xO, 0<x<0.5), or a combination thereof.
11. The semiconductor device of claim 8 , wherein the seed layer includes a first seed layer and a second seed layer, wherein the first seed layer includes magnesium oxide (MgO) having a rocksalt crystal structure, and the second seed layer is disposed over the first seed layer and includes beryllium oxide (BeO) having a rocksalt crystal structure.
12. The semiconductor device of claim 8 , wherein the seed layer includes beryllium-magnesium oxide (BexMg1-xO, 0<x<0.5) having a rocksalt crystal structure.
13. The semiconductor device of claim 8 , wherein the seed layer exhibits a dielectric constant (k) of 15 to 20.
14. The semiconductor device of claim 8 , wherein each of the at least two high-k dielectric layers includes beryllium oxide (BeO) having a rocksalt crystal structure that is stable under room temperature and atmospheric pressure.
15. The semiconductor device of claim 8 , wherein each of the at least two high-k dielectric layers exhibits a dielectric constant (k) of fifty (50) or higher.
16. The semiconductor device of claim 8 , further comprising an interface layer disposed between the second electrode and the multilayer stack.
17. A semiconductor device, comprising:
a first electrode;
a second electrode; and
a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer,
wherein the seed layer includes beryllium-magnesium oxide (Be x Mg 1-x O, 0<x<0.5) having a rocksalt crystal structure, and
wherein the high-k dielectric layer includes BeO having a rocksalt crystal structure that is stable under room temperature and atmospheric pressure and exhibits a dielectric constant (k) of fifty (50) or higher.
18. The semiconductor device of claim 17 , wherein the seed layer includes a first seed layer and a second seed layer, wherein the first seed layer includes magnesium oxide (MgO) having a rocksalt crystal structure, and the second seed layer is disposed over the first seed layer and includes beryllium oxide (BeO) having a rocksalt crystal structure.
19. The semiconductor device of claim 17 , wherein the seed layer exhibits a dielectric constant (k) of fifteen (15) to twenty (20).
20. The semiconductor device of claim 17 , wherein the high-k dielectric layer includes a single-layer structure or a multilayer structure containing two or more layers,
wherein, when the high-k dielectric layer includes the multilayer structure, each layer included in the multilayer structure includes BeO having a rocksalt crystal structure, and
wherein the high-k dielectric layer including the multilayer structure has a thickness greater than the high-k dielectric layer including the single-layer structure.
21. The semiconductor device of claim 17 , wherein the multilayer stack further includes an additional high-k dielectric layer disposed over the high-k dielectric layer.
22. The semiconductor device of claim 21 , wherein the additional high-k dielectric layer exhibits a dielectric constant (k) lower than the high-k dielectric layer.
23. The semiconductor device of claim 17 , further comprising an interface layer disposed between the second electrode and the multilayer stack.
24. A semiconductor device, comprising:
a first electrode;
a second electrode; and
a multilayer stack that is interposed between the first electrode and the second electrode and includes a seed layer and a high-k dielectric layer structure,
wherein the seed layer includes beryllium-magnesium oxide (Be x Mg 1-x O, 0<x<0.5) having a rocksalt crystal structure,
wherein the high-k dielectric layer structure includes at least two high-k dielectric layers and at least one strain applying layer,
wherein each of the at least two high-k dielectric layers includes beryllium oxide (BeO) having a rocksalt crystal structure that is stable under room temperature and atmospheric pressure, and
wherein the strain applying layer is interposed between adjacent high-k dielectric layers.
25. The semiconductor device of claim 24 , wherein the strain applying layer is configured to stabilize a rocksalt crystal structure of the at least two high-k dielectric layers by applying strain to the at least two high-k dielectric layers.
26. The semiconductor device of claim 24 , wherein the strain applying layer includes magnesium oxide (MgO), beryllium-magnesium oxide (Be x Mg 1-x O, 0<x<0.5), or a combination thereof.
27. The semiconductor device of claim 24 , wherein the seed layer exhibits a dielectric constant (k) of 15 to 20.
28. The semiconductor device of claim 24 , wherein each of the at least two high-k dielectric layers exhibits a dielectric constant (k) of fifty (50) or higher.
29. The semiconductor device of claim 24 , wherein the multilayer stack further includes an additional high-k dielectric layer disposed over the high-k dielectric layer that is adjacent to the second electrode from among the at least two high-k dielectric layers.
30. The semiconductor device of claim 29 , wherein the additional high-k dielectric layer exhibits a dielectric constant (k) that is lower than the dielectric constant (k) of the at least two high-k dielectric layers.
31. The semiconductor device of claim 24 , further comprising an interface layer disposed between the second electrode and the multilayer stack.