MEMS device built using the BEOL metal layers of a solid state semiconductor process
A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.
1. A MEMS device formed using the materials of the BEOL of a CMOS process, wherein:
a post-processing of vHF and post hacking was applied to form the MEMS device,
a total size of the M EMS device is between 10 um 2 and 22.50 um 2 ; and
a plurality of springs, distributed evenly around the MEMS device, rotated around the MEMS device central axis, so that by symmetry the MEMS device cannot be tilted after being released with a vHF etching; wherein
the MEMS device includes a pad, wherein the pad includes a top metal layer arranged to extend between 15 μm to 25 μm laterally beyond a vertically aligned passivation opening in all directions preventing etching of dielectric material beyond the top metal layer during the post-processing of vHF.
2. The MEMS device of claim 1 , wherein the total size of the MEMS device is less than 10000 um 2 .
3. The MEMS device of claim 1 further comprising a set of at least three springs distributed evenly around the MEMS device and rotated around a central axis of the MEMS device.
4. The MEMS device of claim 3 , wherein the device shape is round and the springs have a spiral shape.
5. The M EMS device of claim 4 , wherein the springs are made with one of a single metal layer and a stack-up of at least two metal layers.
6. The MEMS device of claim 5 , wherein the MEMS device is an inertial sensor.
7. The MEMS device of claim 6 comprising a proof mass, wherein the proof mass is made with a stack-up of four metal layers and the springs, wherein the springs are one of: made and connected with a top metal layer of the proof mass forming the stack-up and connected with two top metal layers of the stack-up.
8. The MEMS device of claim 6 , wherein the springs are connected to an external ring such that a portion thereof remains buried into a silicon oxide on its outer edge after the vHF etching.
9. The MEMS device of claim 1 , wherein the MEMS device has a top metal plane and a bottom metal plane that is smaller than the top one.
10. The MEMS device of claim 9 , wherein an outer ring width of the bottom metal plane is less than or equal to 10% to 50% the width of an outer ring of the top metal plane.
11. The MEMS device of claim 1 , wherein the MEMS device is formed within a MEMS cavity that does not include metal filling structures.