Semiconductor device having multi-layered gate spacers
Semiconductor devices and methods of manufacture are presented in which spacers are manufactured on sidewalls of gates for semiconductor devices. In embodiments the spacers comprise a first seal, a second seal, and a contact etch stop layer, in which the first seal comprises a first shell along with a first bulk material, the second seal comprises a second shell along with a second bulk material, and the contact etch stop layer comprises a third bulk material and a second dielectric material.
1. A semiconductor device comprising:
a first spacer layer comprising an inner layer disposed between two outer layers, wherein the inner layer and the two outer layers each comprise a first material, wherein a carbon content of the two outer layers is greater than that of the inner layer, and an oxygen content of the two outer layers is less than that of the inner layer; and
a second spacer layer comprising a first layer and a second layer, the first layer being the first material and being in direct contact with one of the two outer layers.
2. The semiconductor device of claim 1 , wherein the first material comprises SiOCN.
3. The semiconductor device of claim 1 , wherein the second layer comprises silicon nitride.
4. The semiconductor device of claim 1 , wherein the carbon content of the first layer of the second spacer layer is less than about 2%.
5. The semiconductor device of claim 1 , wherein one of the two outer layers has a density of between about 2.5 g/cm 3 and about 2.7 g/cm 3 .
6. The semiconductor device of claim 1 , wherein the inner layer has a nitrogen concentration of between about 5% and about 12%.
7. The semiconductor device of claim 1 , wherein one of the two outer layers has a nitrogen concentration of between about 25% and about 45%.
8. A semiconductor device comprising:
a first seal adjacent to a gate stack, the first seal comprising:
a first shell of a first material with a first composition; and
a first bulk material of the first material with a second composition different from the first composition;
a second seal in physical contact with the first seal, the second seal comprising:
a second shell of the first material with a third composition; and
a second bulk material of the first material with a fourth composition different from the third composition; and
a contact etch stop layer in physical contact with the second seal, the contact etch stop layer comprising:
a third bulk material of the first material with a fifth composition; and
a third shell of a second material different from the first material.
9. The semiconductor device of claim 8 , wherein the first material comprises silicon carbon oxynitride.
10. The semiconductor device of claim 8 , wherein the first composition has a smaller oxygen concentration than the second composition.
11. The semiconductor device of claim 10 , wherein the first composition has a larger nitrogen concentration than the second composition.
12. The semiconductor device of claim ii, wherein the first composition has a larger carbon concentration than the second composition.
13. The semiconductor device of claim 12 , wherein the second material comprises silicon nitride.
14. The semiconductor device of claim 8 , wherein the first composition has a carbon concentration of between about 5% and about 20%.
15. A semiconductor device comprising:
a first shell layer with a first set of elements;
a first bulk dielectric material with the first set of elements adjacent to the first shell layer, the first bulk dielectric material having a different composition than the first shell layer;
a second bulk dielectric material adjacent to the first bulk dielectric material, the second bulk dielectric material having the first set of elements;
a second shell layer with the first set of elements adjacent to the second bulk dielectric material, the second shell layer having a different composition than the second bulk dielectric material;
a third bulk dielectric material with the first set of elements adjacent to the second shell layer; and
a dielectric material adjacent to the third bulk dielectric material.
16. The semiconductor device of claim 15 , wherein the first shell layer is silicon carbon oxynitride.
17. The semiconductor device of claim 16 , wherein the dielectric material is silicon nitride.
18. The semiconductor device of claim 15 , herein the first shell layer has a lower concentration of oxygen than the first bulk dielectric material.
19. The semiconductor device of claim 15 , wherein the first shell layer has a higher concentration of nitrogen than the first bulk dielectric material.
20. The semiconductor device of claim 15 , wherein the first bulk dielectric material has a nitrogen concentration of between about 5% and about 12%.