IP Library › Granted Patent US 11,872,386
Granted Patent B2
US 11,872,386 · App. 17/148,215 · Granted Jan 16, 2024

Thin film maser emitter and thin panel phased array of emitters

Inventors: James Joseph Cohen (Wenham, MA); Emad N. Eskandar (Swampscott, MA)
Assignee: Emad Eskandar
A61N5/045A61B18/1815A61B90/36H01S1/02H01S1/06A61B2018/0016A61B2018/00446A61B2018/00577A61B2018/1861A61B2090/374A61B2090/3762A61N2005/027
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Quick Facts
Patent No.
US 11,872,386
App. No.
17/148,215
Granted
Jan 16, 2024
Kind
B2
Abstract

A MASER (Microwave Amplified Stimulated Emission of Radiation) emitter is fabricated of thin film components, including a thin film of nitrogen-implanted, epitaxial crystal diamond. The MASER elements can also include a controllable Q-switching layer and be arranged in a thin panel, phased array to generate a single beam of coherent, mode-locked, continuous wave MASER radiation.

Claims (29)

1. A MASER emitter capable of outputting coherent microwave energy, comprising:

a first dielectric polymer resonator layer;

a second dielectric polymer resonator layer;

a gain medium comprising a thin film epitaxial layer of nitrogen-implanted crystal diamond,

a Q-switch CCD controlled layer of nematic molecules located adjacent the gain medium, wherein the gain medium and the Q-switch are located between the first and second dielectric polymer resonator layers, said Q-switch being controllable between a high Q factor setting and a low Q factor setting;

an LED layer that outputs light that passes through at least the first dielectric polymer resonator layer to pump photons into the gain medium at a level sufficient to cause coherent microwave emission from the gain medium in continuous wave mode when the Q-switch is set to the high Q factor setting.

2. The MASER emitter recited in claim 1 further comprising a thermo-electric Peltier slab layer oriented adjacent the LED layer.

3. The MASER emitter recited in claim 2 wherein the thermo-electric Peltier slab layer is formed on an underlying substrate, the LED layer is formed on the thermo-electric Peltier slab layer, the first dielectric polymer resonator layer is formed on the LED layer, the Q-switch CCD controlled layer of nematic molecules is formed on the first dielectric polymer resonator layer, the thin film epitaxial layer of nitrogen-implanted crystal diamond is formed on the Q-switch CCD controlled layer of nematic molecules, and the second dielectric polymer resonator layer is formed on the thin film epitaxial layer of nitrogen-implanted crystal diamond.

4. A phased array comprising a plurality of MASER emitters as recited in claim 1 , each arranged in a two-dimensional array and each capable of emitting continuous wave, coherent microwave radiation, wherein the respective Q-switch layers are controlled to appropriately delay MASER emission from the respective MASER emitters in order to form a combined emission from the plurality of MASER emitters in the phased array that is a single mode-locked, beam of coherent, continuous wave MASER radiation.

5. The phased array comprising a plurality of MASER emitters recited in claim 4 wherein a first group of emitters are located in a first plane, and a second group of emitters are located in a second parallel plane and offset spatially from the first plane.

6. The phased array comprising a plurality of MASER emitters recited in claim 4 wherein the emitters are arranged in column and rows.

7. The phased array comprising a plurality of MASER emitters recited in claim 4 wherein the emitters are arranged in a circular pattern or a star pattern.

8. The phased array comprising a plurality of MASER emitters recited in claim 4 wherein the distribution of energy in the coherent, mode-locked continuous wave MASER radiation is orthogonally Gaussian.

9. The phased array comprising a plurality of MASER emitters recited in claim 8 wherein Gaussian orthogonality is achieved by adjusting the LED pump energy and coordinating the operation of the Q-switches.

10. The phased array comprising a plurality of MASER emitters recited in claim 4 wherein the thickness of the epitaxial gain medium is no less than 5 micron and no more than 40 microns.

11. The MASER apparatus recited in claim 4 wherein the Q-switches are controlled to adjust phase and frequency of the beam such that the beam includes a first characteristic frequency for a coupling component of the beam and a second characteristic frequency for a modulation component of the beam.

12. A MASER apparatus capable of outputting continuous wave, coherent microwave radiation, comprising:

a gain medium comprising a layer of nitrogen-implanted, epitaxial diamond;

a first resonator layer located on a first side of the layer of nitrogen-implanted, epitaxial diamond;

a second resonator layer located on a second side of the layer of nitrogen-implanted, epitaxial diamond; and

an LED that outputs light to pump photons into the gain medium at a level sufficient to cause continuous wave, coherent microwave emission.

13. The MASER apparatus recited in claim 12 wherein the layer of nitrogen-implanted, epitaxial diamond has a thickness of no greater than 40 microns.

14. The MASER apparatus recited in claim 13 wherein the nitrogen-implanted, epitaxial diamond has a thickness of no greater than 30 microns.

15. The MASER apparatus recited in claim 12 wherein the first resonator layer is a Spin Hall, spin torque oscillator.

16. The MASER apparatus recited in claim 12 wherein the second resonator is a lithographed chemical vapor deposited copper layer.

17. The MASER apparatus recited in claim 12 further comprising a heat sink thermally connected to the LED.

18. The MASER apparatus recited in claim 12 wherein the MASER apparatus operates between 29° C. and 43° C.

19. The MASER apparatus recited in claim 12 wherein the layer of nitrogen-implanted, epitaxial diamond is exposed to radiation by a beam of swift heavy ions during the fabrication process.

20. The MASER apparatus recited in claim 19 wherein the layer of nitrogen-implanted, epitaxial diamond is also exposed to radiation by a beam of low energy electrons during the fabrication process.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 9, 2025
From: ESKANDAR, EMAD
To: NEURADAPTIVE, INC.
Reel/Frame 069866/0726 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2022
From: CEROMAZE INC.
To: ESKANDAR, EMAD
Reel/Frame 062021/0197 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2021
From: COHEN, JAMES JOSEPH; ESKANDAR, EMAD N.
To: CEROMAZE INC.
Reel/Frame 055123/0052 →
Continuity (2)
Provisional Application 62961263 · Jan 15, 2020
Related Publication 20210218213A1 · Jul 15, 2021