Device having a membrane and method of manufacture

1. A device comprising:

a substrate comprising an upper substrate surface and a lower substrate surface, wherein the lower substrate surface is a surface of the substrate opposite to the upper substrate surface;

a membrane-layer suspended above the upper substrate surface,

wherein the substrate comprises a recess penetrating the substrate between the lower substrate surface and the upper substrate surface,

wherein the membrane-layer spans the recess,

wherein the recess comprises:

an upper recess region,

an intermediate recess region, and

a lower recess region,

wherein the upper recess region is a part of the recess in direct vicinity to the upper substrate surface, the intermediate recess region is a part of the recess directly below the upper recess region, and the lower recess region is a part of the recess other than the upper recess region and the intermediate recess region, and

wherein a cross-sectional area of the upper recess region determined parallel to the upper substrate surface is larger than a respective cross-sectional area of the intermediate recess region; and

a first insulation layer arranged between the upper substrate surface and the membrane-layer,

wherein the first insulation layer comprises an opening framed by a lower etch stopper and the lower etch stopper is positioned at a distance outward from an edge of the upper recess region, and

wherein the lower etch stopper has a higher tensile strength than a main component of the first insulation layer.

2. The device according to claim 1 , further comprising a silicon nitride layer arranged directly on the upper substrate surface, and wherein an opening in the silicon nitride layer is at least as wide as the opening of the recess in the upper substrate surface and at maximum as wide as the opening in the first insulation layer.

3. The device according to claim 1 , further comprising a second insulation layer arranged directly above the membrane-layer, wherein an opening in the second insulation layer is framed by an upper etch stopper, and wherein the upper etch stopper has a higher tensile strength than a main component of the second insulation layer.

4. The device according to claim 3 , wherein a material of the substrate is silicon, wherein a material of the second insulation layer and the first insulation layer comprises silicon oxide, and wherein a material of the lower etch stopper and of the upper etch stopper comprises at least one substance selected from silicon or silicon nitride.

5. The device according to claim 1 , wherein the device is a MEMS microphone.

6. A method for forming a device, the method comprising:

providing a substrate comprising an upper substrate surface and a lower substrate surface that are opposing each other;

forming a continuous, self-contained trench with a width and a depth in the upper substrate surface by a first structuring technique;

filling the trench with a filling material;

forming a membrane-layer above the upper substrate surface comprising the filled trench;

forming a preliminary recess in the substrate by a second etching technique applied from a side of the lower substrate surface, wherein the preliminary recess comprises a preliminary upper recess region extending from the upper substrate surface to the depth, and the preliminary upper recess region is framed by the filling material of the trench, wherein an intermediate recess region is a region of the preliminary recess directly below the preliminary upper recess region, wherein sidewalls of the intermediate recess region lie within a spatial volume perpendicularly below the trench, wherein a lower recess region is a part of the preliminary recess other than the preliminary upper recess region and the intermediate recess region,

forming a recess by removing the filling material with a third etching technique; and

wherein the recess comprises the intermediate recess region, the lower recess region, and an upper recess region, and wherein the upper recess region is formed by a combined volume of the trench and the preliminary upper recess region.

7. The method according to claim 6 , wherein the width of the trench is at least twice a tolerance of the second etching technique in forming the intermediate recess region.

8. The method according to claim 6 , wherein the filling material comprises a lower etching rate than the substrate in the second etching technique.

9. The method according to claim 6 , wherein the first structuring technique applied to the upper substrate surface has a lower tolerance than the second etching technique applied to the substrate.

10. The method according to claim 6 , wherein a tolerance of the first structuring technique applied to the upper substrate surface is at least 10 times smaller than a tolerance of the second etching technique applied to the substrate.

11. The method according to claim 6 , wherein a tolerance of the first structuring technique applied to the upper substrate surface is ±1 μm or less, and wherein a tolerance of the second etching technique applied to the substrate is ±1 μm or less.

12. The method according to claim 6 ,

wherein a material of the substrate is silicon,

wherein the filling material is at least one selected from the group consisting of silicon oxide, phosphosilicate glass, and borophosphosilicate glass,

wherein the first structuring technique is a slow deep reactive ion etching technique applied from the side of the upper substrate surface,

wherein the second etching technique is a fast deep reactive ion etching technique applied from the side of the lower substrate surface, and

wherein the third etching technique is a buffered oxide etching technique.

13. The method according to claim 6 , further comprising applying chemical mechanical polishing to the upper substrate surface and the filled trench, directly after filling the trench with the filling material.

14. The method according to claim 6 , wherein the filling material comprises a higher etching rate than the substrate in the third etching technique.

15. The method according to claim 14 , further comprising:

forming a first insulation layer between the upper substrate surface and the membrane-layer; and

forming a lower etch stopper in the first insulation layer,

wherein the lower etch stopper is positioned at a distance e away from an outward rim of the trench, and

wherein a material of the lower etch stopper has a lower etching rate in the third etching technique than at least an inner portion of the first insulation layer, which is framed by the lower etch stopper.

16. The method according to claim 15 , further comprising:

forming a silicon nitride layer directly on the upper substrate surface, before forming the first insulation layer; and

removing the silicon nitride layer in a section arranged perpendicularly above the upper recess region.

17. The method according to claim 15 , further comprising:

forming a second insulation layer above the membrane-layer; and

forming an upper etch stopper in the second insulation layer,

wherein a material of the upper etch stopper has a lower etching rate in the third etching technique than at least an inner portion of the second insulation layer, which is framed by the upper etch stopper.

18. The method according to claim 17 , wherein an inner portion of the first insulation layer framed by the lower etch stopper and the inner portion of the second insulation layer framed by the upper etch stopper are removed during the third etching technique.

19. The method according to claim 17 ,

wherein the material of the second insulation layer and the first insulation layer comprises silicon oxide, and

wherein the material of the lower etch stopper and the upper etch stopper comprises at least one substance selected from silicon and silicon nitride.

20. The method according to claim 6 , wherein the device is a MEMS microphone.