3D semiconductor device(s) and structure(s) with electronic control units
A 3D device, the first level including first transistors and a first interconnect; a second level with second transistors overlaying the first level; a third level with third transistors overlaying the second level; a plurality of electronic circuit units (ECUs), where each ECU includes a first circuit with a portion of the first transistors, where each of the ECUs includes a second circuit including a portion of the second transistors, where each of the plurality of ECUs includes a third circuit, which includes a portion of the third transistors, where each of the ECUs includes a vertical data bus, where the vertical data bus has between eight pillars and three hundreds pillars, where the vertical data bus provides electrical connections between the first and second circuits, where the third level includes an array of memory cells, and where the second circuit includes a memory control circuit.
1. A 3D device, said device comprising:
a first level comprising first transistors, said first level comprising a first interconnect;
a second level comprising second transistors, said second level overlaying said first level;
a third level comprising third transistors, said third level overlaying said second level;
a plurality of electronic circuit units (ECUs),
wherein each of said plurality of ECUs comprises a first circuit, said first circuit comprising a portion of said first transistors,
wherein each of said plurality of ECUs comprises a second circuit, said second circuit comprising a portion of said second transistors,
wherein each of said plurality of ECUs comprises a third circuit, said third circuit comprising a portion of said third transistors,
wherein each of said ECUs comprises a vertical bus,
wherein said vertical bus comprises greater than eight pillars and less than three hundred pillars,
wherein said vertical bus provides electrical connections between said first circuit and said second circuit,
wherein said vertical bus comprises un-decoded address information,
wherein each of said ECUs comprises vertical control lines,
wherein said vertical control lines comprise more than eight hundred pillars,
wherein said vertical control lines provide electrical connections between said second circuit and said third circuit, and
wherein said vertical control lines comprise decoded address information.
2. The device according to claim 1 ,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonding regions and metal to metal bonding regions.
3. The device according to claim 1 ,
wherein said third level comprises an array of memory cells, and
wherein said second circuit comprises a memory control circuit.
4. The device according to claim 1 ,
wherein said third level comprises an array of DRAM cells.
5. The device according to claim 1 ,
wherein said first circuit comprises at least one processor.
6. The device according to claim 1 ,
wherein said vertical bus comprises less than one hundred and twenty pillars.
7. The device according to claim 1 ,
wherein each of said vertical control lines is connected to one horizontal memory control line.
8. A 3D device, the device comprising:
a first level comprising first transistors, said first level comprising a first interconnect;
a second level comprising second transistors, said second level overlaying said first level;
a third level comprising third transistors, said third level overlaying said second level;
a plurality of electronic circuit units (ECUs),
wherein each of said plurality of ECUs comprises a first circuit, said first circuit comprising a portion of said first transistors,
wherein each of said plurality of ECUs comprises a second circuit, said second circuit comprising a portion of said second transistors,
wherein each of said plurality of ECUs comprises a third circuit, said third circuit comprising a portion of said third transistors,
wherein each of said ECUs comprises a vertical bus,
wherein said vertical bus comprises greater than eight pillars and less than three hundred pillars,
wherein said vertical bus provides electrical connections between said first circuit and said third circuit,
wherein said vertical bus comprises un-decoded address information,
wherein each of said ECUs comprises vertical control lines,
wherein said vertical control lines comprise more than eight hundred pillars, and
wherein said vertical control lines provide electrical connections between said second circuit and said third circuit, and
wherein said vertical control lines comprise decoded address information.
9. The device according to claim 8 ,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonding regions and metal to metal bonding regions.
10. The device according to claim 8 ,
wherein said second level comprises an array of memory cells, and
wherein said third circuit comprises a memory control circuit.
11. The device according to claim 8 ,
wherein said second level comprises an array of DRAM cells.
12. The device according to claim 8 ,
wherein said first circuit comprises at least one processor.
13. The device according to claim 8 ,
wherein said vertical bus comprises less than one hundred and twenty pillars.
14. The device according to claim 8 ,
wherein each of said vertical control lines is connected to one horizontal memory control line.
15. A 3D device, the device comprising:
a first level comprising first transistors, said first level comprising a first interconnect;
a second level comprising second transistors, said second level overlaying said first level;
a third level comprising third transistors, said third level overlaying said second level;
a plurality of electronic circuit units (ECUs),
wherein each of said plurality of ECUs comprises a first circuit, said first circuit comprising a portion of said first transistors,
wherein each of said plurality of ECUs comprises a second circuit, said second circuit comprising a portion of said second transistors,
wherein each of said plurality of ECUs comprises a third circuit, said third circuit comprising a portion of said third transistors,
wherein said vertical bus comprises un-decoded address information,
wherein each of said ECUs comprises a vertical bus,
wherein said vertical bus comprises greater than eight pillars and less than three hundred pillars,
wherein said vertical bus provides electrical connections between said first circuit and said second circuit,
wherein said third level comprises an array of memory cells, and
wherein said second circuit comprises a memory control circuit.
16. The device according to claim 15 ,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonding regions and metal to metal bonding regions.
17. The device according to claim 15 ,
wherein each of said ECUs comprise vertical control lines,
wherein each vertical control line comprises more than eight hundred pillars, and
wherein said vertical control lines provide electrical connections between said second circuit and said third circuit, and
wherein said vertical control lines comprise decoded address information.
18. The device according to claim 15 ,
wherein said third level comprise an array of DRAM cells.
19. The device according to claim 15 ,
wherein said first circuit comprises at least one processor.
20. The device according to claim 15 ,
wherein said vertical bus comprises less than one hundred and twenty pillars.