3D semiconductor devices and structures with electronic circuit units
A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors and overlaying the first level; at least four electronic circuit units (ECUs); a redundancy circuit, where each of the at least four ECUs includes a first circuit, which includes a portion of the first transistors, where each of the at least four ECUs includes a second circuit, the second circuit including some second transistors, where each of the at least four ECUs includes a vertical connectivity structure which includes pillars, where the pillars provide electrical connections between the first circuit and the second circuit, where each of the at least four ECUs includes at least one memory control circuit and at least one memory array, where the second level is bonded to the first level, and the bonded includes oxide to oxide and metal to metal bonding regions.
1. A 3D device, said device comprising:
a first level comprising first transistors, said first level comprising a first interconnect;
a second level comprising second transistors, said second level overlaying said first level;
at least four electronic circuit units (ECUs); and
a redundancy circuit,
wherein each of said at least four ECUs comprises a first circuit, said first circuit comprising a portion of said first transistors,
wherein each of said at least four ECUs comprises a second circuit, said second circuit comprising a portion of said second transistors,
wherein each of said at least four ECUs comprises a vertical connectivity structure, said vertical connectivity structure comprising a plurality of pillars,
wherein said plurality of pillars provides electrical connections between said first circuit and said second circuit,
wherein each of said at least four ECUs comprises at least one memory control circuit and at least one memory array,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonding regions and metal to metal bonding regions.
2. The device according to claim 1 , further comprising:
at least one SRAM (Static Random Access Memory) array.
3. The device according to claim 1 , further comprising:
at least one temperature sensor.
4. The device according to claim 1 , further comprising:
a plurality of electrically programmable fuses.
5. The device according to claim 1 , further comprising:
at least one processor circuit.
6. The device according to claim 1 , further comprising:
a plurality of capacitors.
7. The device according to claim 1 ,
wherein said plurality of pillars are disposed in-between said memory arrays.
8. A 3D device, said device comprising:
a first level comprising first transistors, said first level comprising a first interconnect;
a second level comprising second transistors, said second level overlaying said first level;
at least four electronic circuit units (ECUs); and
at least one SRAM (Static Random Access Memory) array,
wherein each of said at least four ECUs comprises a first circuit, said first circuit comprising a portion of said first transistors,
wherein each of said at least four ECUs comprises a second circuit, said second circuit comprising a portion of said second transistors,
wherein each of said at least four ECUs comprises a vertical connectivity structure, said vertical connectivity structure comprising a plurality of pillars,
wherein said plurality of pillars provides electrical connections between said first circuit and said second circuit,
wherein each of said at least four ECUs comprises at least one memory control circuit and at least one memory array,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonding regions and metal to metal bonding regions.
9. The device according to claim 8 , further comprising:
a redundancy circuit.
10. The device according to claim 8 , further comprising:
at least one temperature sensor.
11. The device according to claim 8 , further comprising:
a plurality of electrically programmable fuses.
12. The device according to claim 8 , further comprising:
at least one processor circuit.
13. The device according to claim 8 , further comprising:
a plurality of capacitors.
14. The device according to claim 8 ,
wherein said plurality of pillars are disposed in-between said memory arrays.
15. A 3D device, said device comprising:
a first level comprising first transistors, said first level comprising a first interconnect;
a second level comprising second transistors, said second level overlaying said first level;
at least four electronic circuit units (ECUs); and
at least one temperature sensor,
wherein each of said at least four ECUs comprises a first circuit, said first circuit comprising a portion of said first transistors,
wherein each of said at least four ECUs comprises a second circuit, said second circuit comprising a portion of said second transistors,
wherein each of said at least four ECUs comprises a vertical connectivity structure, said vertical connectivity structure comprising a plurality of pillars,
wherein said plurality of pillars provides electrical connections between said first circuit and said second circuit,
wherein each of said at least four ECUs comprises at least one memory control circuit and at least one memory array,
wherein said second level is bonded to said first level, and
wherein said bonded comprises oxide to oxide bonding regions and metal to metal bonding regions.
16. The device according to claim 15 , further comprising:
a redundancy circuit.
17. The device according to claim 15 , further comprising:
a plurality of electrically programmable fuses.
18. The device according to claim 15 , further comprising:
at least one processor circuit.
19. The device according to claim 15 , further comprising:
a plurality of capacitors.
20. The device according to claim 15 ,
wherein said plurality of pillars are disposed in-between said memory arrays.