Semiconductor memory device

1. A semiconductor memory device, comprising:

a first chip including a peripheral transistor and a first insulating layer; and

a second chip including a stacked structure and a second insulating layer,

wherein the stacked structure includes conductive patterns and insulating patterns alternately stacked with each other,

the first insulating layer includes a first bonding surface,

the second insulating layer includes a second bonding surface contacting the first bonding surface, and

the second chip further includes a protrusion protruding from the second bonding surface of the second insulating layer toward the first insulating layer.

2. The semiconductor memory device of claim 1 , wherein the protrusion is integrally formed with the second insulating layer.

3. The semiconductor memory device of claim 1 ,

wherein the first chip includes a recess in the form of a depression in the first bonding surface of the first insulating layer, and

wherein the protrusion is configured to be inserted into the recess.

4. The semiconductor memory device of claim 1 ,

wherein the second chip further includes a first metal line exposed through the second bonding surface of the second insulating layer, and

wherein the first metal line contacts the first bonding surface of the first insulating layer.

5. The semiconductor memory device of claim 4 , wherein the first metal line is electrically coupled to at least one of the conductive patterns.

6. The semiconductor memory device of claim 4 ,

wherein the first chip further includes a second metal line exposed through the first bonding surface of the first insulating layer, and

wherein the second metal line contacts the first metal line and the second bonding surface.

7. The semiconductor memory device of claim 6 , wherein the second metal line is electrically coupled to the peripheral transistor.

8. The semiconductor memory device of claim 1 , wherein the stacked structure is arranged in a central region of the second chip, and

wherein the protrusion is arranged in an edge region of the second chip, wherein the edge region surrounds the central region.

9. The semiconductor memory device of claim 1 ,

wherein the protrusion is one of a plurality of protrusions included in the second chip, and

wherein the stacked structure is arranged between the plurality of protrusions.

10. A semiconductor memory device, comprising:

a first chip including a peripheral transistor and a first insulating layer; and

a second chip including a stacked structure and a second insulating layer,

wherein the stacked structure includes conductive patterns and insulating patterns alternately stacked with each other,

the first insulating layer includes a first bonding surface,

the second insulating layer includes a second bonding surface contacting the first bonding surface, and

the first chip further includes a protrusion protruding from the first bonding surface of the first insulating layer toward the second insulating layer.

11. The semiconductor memory device of claim 10 , wherein the protrusion is integrally formed with the first insulating layer.

12. The semiconductor memory device of claim 10 ,

wherein the second chip includes a recess in the form of a depression in the second bonding surface of the second insulating layer, and

wherein the protrusion is configured to be inserted into the recess.

13. A semiconductor memory device, comprising:

a first chip including a peripheral transistor and a first insulating layer; and

a second chip including a stacked structure and a second insulating layer,

wherein the stacked structure includes conductive patterns and insulating patterns alternately stacked with each other,

wherein the first insulating layer includes a first bonding surface,

wherein the second insulating layer includes a second bonding surface contacting the first bonding surface,

wherein the first chip further includes a first protrusion protruding from the first bonding surface of the first insulating layer toward the second insulating layer, and

wherein the second chip further includes a second protrusion protruding from the second bonding surface of the second insulating layer toward the first insulating layer.

14. The semiconductor memory device of claim 13 ,

wherein the first protrusion is integrally formed with the first insulating layer, and

wherein the second protrusion is integrally formed with the second insulating layer.

15. The semiconductor memory device of claim 13 ,

wherein the first chip includes a first recess in the form of a depression in the first bonding surface of the first insulating layer,

wherein the second protrusion is configured to be inserted into the first recess,

wherein the second chip includes a second recess in the form of a depression in the second bonding surface of the second insulating layer, and

wherein the first protrusion is configured to be inserted into the second recess.

16. The semiconductor memory device of claim 15 ,

wherein the peripheral transistor is arranged in a central region of the first chip,

wherein the stacked structure is arranged in a central region of the second chip,

wherein the first protrusion and the first recess are arranged in an edge region of the first chip, wherein the edge region of the first chip surrounds the central region of the first chip, and

wherein the second protrusion and the second recess are arranged in an edge region of the second chip, wherein the edge region of the second chip surrounds the central region of the second chip.