Semiconductor device
According to one embodiment, a semiconductor device includes first, second, third semiconductor members, a first conductive member, a connection member, and an insulating member. The first electrode includes first, second, and third electrode regions. A direction from the first toward second electrode is along a first direction. The second electrode includes fourth, fifth, and sixth electrode regions. The first semiconductor member includes first, second, third, fourth, and fifth partial regions. The second semiconductor member includes first and second semiconductor regions. The third semiconductor member includes third and fourth semiconductor regions. The third electrode is provided between the third partial region and the sixth electrode region in the first direction. The connection member is electrically connected to the first conductive member and the second electrode. The insulating member includes first, second, third, fourth, and fifth portions. The fifth portion contacts the first semiconductor region and the connection member.
1. A semiconductor device, comprising:
a first electrode including a first electrode region, a second electrode region, and a third electrode region;
a second electrode, a direction from the first electrode toward the second electrode being along a first direction, a direction from the first electrode region toward the second electrode region being along a second direction crossing the first direction, the third electrode region being between the first electrode region and the second electrode region, the second electrode including a fourth electrode region, a fifth electrode region, and a sixth electrode region, a direction from the first electrode region toward the fourth electrode region being along the first direction, a direction from the second electrode region toward the fifth electrode region being along the first direction, a direction from the third electrode region toward the sixth electrode region being along the first direction;
a first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the first semiconductor member being of a first conductivity type, the first partial region being between the first electrode region and the fourth electrode region in the first direction, the second partial region being between the second electrode region and the fifth electrode region in the first direction, the third partial region being between the third electrode region and the sixth electrode region in the first direction, the fourth partial region being between the first partial region and the fourth electrode region in the first direction, the fifth partial region being between the second partial region and the fifth electrode region in the first direction;
a second semiconductor member including a first semiconductor region and a second semiconductor region, the second semiconductor member being of a second conductivity type, the first semiconductor region being between the fourth partial region and the fourth electrode region in the first direction, the second semiconductor region being between the fifth partial region and the fifth electrode region in the first direction;
a third semiconductor member including a third semiconductor region and a fourth semiconductor region, the third semiconductor member being of the first conductivity type, the third semiconductor region being between the first semiconductor region and the fourth electrode region in the first direction, the fourth semiconductor region being between the second semiconductor region and the fifth electrode region in the first direction;
a third electrode provided between the third partial region and the sixth electrode region in the first direction, at least a portion of the third electrode being between the first semiconductor region and the second semiconductor region and between the third semiconductor region and the fourth semiconductor region;
a first conductive member, at least a portion of the first conductive member being between the third partial region and the third electrode in the first direction and between the fourth partial region and the fifth partial region in the second direction;
a connection member electrically connected to the first conductive member and the second electrode, at least a portion of the connection member being between the first semiconductor region and the third electrode; and
an insulating member including a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, the first portion being between the connection member and the third electrode, the second portion being between the third electrode and the second semiconductor region, the third portion being between the first partial region and the first conductive member, the fourth portion being between the first conductive member and the third electrode, the fifth portion being between the first semiconductor region and the connection member, the fifth portion contacting the first semiconductor region and the connection member.
2. The device according to claim 1 , wherein
the second electrode further includes a seventh electrode region,
a portion of the seventh electrode region is between the first semiconductor region and the first portion, and
an other portion of the seventh electrode region is between the third semiconductor region and a portion of the third electrode.
3. The device according to claim 2 , wherein
the portion of the seventh electrode region contacts the first semiconductor region, and
the other portion of the seventh electrode region contacts the third semiconductor region.
4. The device according to claim 2 , wherein
a portion of the first semiconductor region is between the fourth partial region and the seventh electrode region in the first direction.
5. The device according to claim 2 , wherein
the first semiconductor region includes a first surface facing the seventh electrode region, and
the first surface is oblique to the first and second directions.
6. The device according to claim 2 , wherein
the third semiconductor region includes a third surface facing the seventh electrode region, and
the third surface is oblique to the first and second directions.
7. The device according to claim 1 , wherein
a portion of the connection member is between the first semiconductor region and the first portion, and
an other portion of the connection member is between the third semiconductor region and a portion of the third electrode.
8. The device according to claim 7 , wherein
the portion of the connection member contacts the first semiconductor region, and
the other portion of the connection member contacts the third semiconductor region.
9. The device according to claim 1 , wherein
the first portion contacts the connection member and the third electrode, and
the second portion contacts the third electrode and the second semiconductor region.
10. The device according to claim 1 , wherein
the insulating member includes a sixth portion,
the sixth portion is between the first conductive member and the fifth partial region, and
a direction from the sixth portion toward a portion of the third electrode is along the first direction.
11. The device according to claim 1 , wherein
a length along a third direction of the connection member is greater than a length along the first direction of the connection member, and
the third direction crosses a plane including the first and second directions.
12. The device according to claim 1 , further comprising:
one or a plurality of conductive layers,
the conductive layer being between the third portion and the first conductive member in the first direction,
the insulating member including a seventh portion,
the seventh portion being between the conductive layer and the first conductive member,
a potential of the conductive layer being in a floating state.
13. The device according to claim 12 , comprising:
a plurality of the conductive layers,
the plurality of conductive layers being arranged along the first direction,
the insulating member including an eighth portion,
the eighth portion being between the plurality of conductive layers.
14. The device according to claim 13 , wherein
the plurality of conductive layers includes a first conductive layer and a second conductive layer,
the second conductive layer is between the first conductive layer and the first conductive member, and
a length along the second direction of the first conductive layer is greater than a length along the second direction of the second conductive layer.
15. The device according to claim 14 , wherein
the plurality of conductive layers further includes a third conductive layer,
the third conductive layer is between the first conductive layer and the second conductive layer, and
a length along the second direction of the third conductive layer is between the length along the second direction of the first conductive layer and the length along the second direction of the second conductive layer.
16. The device according to claim 15 , wherein
the plurality of conductive layers further includes a fourth conductive layer,
the fourth conductive layer is between the third conductive layer and the second conductive layer,
the third conductive layer is next to the first conductive layer,
the fourth conductive layer is next to the second conductive layer, and
a distance along the first direction between the first conductive layer and the third conductive layer is greater than a distance along the first direction between the fourth conductive layer and the second conductive layer.
17. The device according to claim 13 , wherein
the plurality of conductive layers includes a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer,
the second conductive layer is between the first conductive layer and the first conductive member,
the third conductive layer is between the first conductive layer and the second conductive layer and next to the first conductive layer,
the fourth conductive layer is between the third conductive layer and the second conductive layer and next to the second conductive layer, and
a distance along the first direction between the first conductive layer and the third conductive layer is greater than a distance along the first direction between the fourth conductive layer and the second conductive layer.