Self-driven gate-driving circuit
A gate-driving circuit for turning on and off a switch device including a gate terminal coupled to a driving node, a drain terminal coupled to a power node, and a source terminal is provided. The gate-driving circuit includes a driving switch and a voltage control circuit. The driving switch includes a gate terminal coupled to a control node, a drain terminal coupled to the power node, and a source terminal coupled to the driving node. The voltage control circuit is coupled between the control node and the driving node. When a positive pulse is generated at the control node, the voltage control circuit provides the positive pulse to the driving node with a time delay.
1. A gate-driving circuit for turning on and off a switch device comprising a gate terminal coupled to a driving node, a drain terminal coupled to a power node, and a source terminal, the gate-driving circuit comprising:
a driving switch, comprising a gate terminal coupled to a control node, a drain terminal coupled to the power node, and a source terminal coupled to the driving node;
a voltage control circuit, coupled between the control node and the driving node, wherein when a positive pulse is generated at the control node, the voltage control circuit provides the positive pulse to the driving node with a time delay; and
a second voltage control circuit, coupled between the driving node and the source terminal of the switch device and configured to clamp a voltage from the gate terminal to the source terminal of the switch device.
2. The gate-driving circuit as defined in claim 1 , wherein when the positive pulse is generated at the control node, a voltage of the control node rises from a low voltage level to a supply voltage so that the driving switch is turned on to provide a power voltage of the power node to the driving node so as to turn on the switch device.
3. The gate-driving circuit as defined in claim 1 , wherein when the voltage of the control node reaches the supply voltage, a driving voltage of the driving node is still in a low voltage level so that the driving switch is turned on due to a voltage difference from the control node to the driving node so as to turn on the switch device.
4. The gate-driving circuit as defined in claim 1 , wherein the switch device is a silicon device or a SiC device or a GaN device.
5. The gate-driving circuit as defined in claim 1 , wherein the driving switch is a silicon device or a SiC device or a GaN device.
6. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first resistor, coupled between the control node and the driving node.
7. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a transistor, comprising a control terminal coupled to the control node, a first terminal coupled to the control node, and a second terminal coupled to the driving node.
8. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first diode, comprising an anode coupled to the control node and a cathode coupled to the driving node.
9. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a zener, comprising an anode coupled to the control node and a cathode coupled to the driving node.
10. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a zener, comprising an anode coupled to the driving node and a cathode coupled to the control node.
11. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first zener, comprising an anode and a cathode coupled to the control node; and
a second zener, comprising an anode coupled to the anode of the first zener and a cathode coupled to the driving node.
12. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first diode, comprising an anode coupled to the control node and a cathode coupled to the driving node; and
a second diode, comprising an anode coupled to the driving node and a cathode coupled to the control node.
13. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first zener, comprising an anode coupled to the control node and a cathode coupled to the driving node; and
a second zener, comprising an anode coupled to the driving node and a cathode coupled to the control node.
14. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a current-control resistor, coupled to the control node;
a first transistor, comprising a control terminal coupled to the current-control resistor, a first terminal coupled to the current-control resistor, and a second terminal;
a second transistor, comprising a control terminal coupled to the second terminal of the first transistor, a first terminal coupled to the second terminal of the first transistor, and a second terminal;
a third transistor, comprising a control terminal coupled to the second terminal of the second transistor, a first terminal coupled to the second terminal of the second transistor, and a second terminal coupled to the driving node; and
a reverse diode, comprising a reverse anode coupled to the driving node and a reverse cathode coupled to the control node.
15. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first diode, comprising an anode coupled to the control node and a cathode; and
a second zener, comprising an anode coupled to the driving node and a cathode coupled to the cathode of the first diode.
16. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first diode, comprising an anode coupled to the control node and a cathode; and
a second zener, comprising an anode coupled to the cathode of the first diode and a cathode coupled to the driving node.
17. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first resistor, coupled to the driving node; and
a first bidirectional-conducting device, coupled between the first resistor and the control node.
18. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first resistor, coupled between the control node and the driving node; and
a first bidirectional-conducting device, coupled between the control node and the driving node.
19. The gate-driving circuit as defined in claim 1 , wherein the voltage control circuit comprises:
a first bidirectional-conducting device, coupled to the control node;
a first resistor, coupled between the first bidirectional-conducting device and the driving node; and
a second bidirectional-conducting device, coupled between the first bidirectional-conducting device and the driving node.
20. The gate-driving circuit as defined in claim 1 , wherein the second voltage control circuit comprises:
a first transistor, comprising a control terminal coupled to the driving node, a first terminal coupled to the driving node, and a second terminal coupled to the source terminal of the switch device.
21. The gate-driving circuit as defined in claim 1 , wherein the second voltage control circuit comprises:
a first diode, comprising a first anode coupled to the driving node and a first cathode coupled to the source terminal of the switch device, wherein the voltage across the gate terminal to the source terminal of the switch device is clamped at a first forward voltage of the first diode.
22. The gate-driving circuit as defined in claim 1 , wherein the second voltage control circuit comprises:
a first zener, comprising a first anode coupled to the driving node and a first cathode coupled to the source terminal of the switch device, wherein the voltage across the gate terminal to the source terminal of the switch device is clamped at a first forward voltage of the first zener.