Semiconductor device
A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies α p ≥α 1 >α 2 in which α p , α 1 , and α 2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, α c ≥15×10 −6 /° C. in which α c represents a composite coefficient of linear thermal expansion of the sealing layers, and E c ≥5 GPa or more in which E c represents a composite Young's modulus of the sealing layers.
1. A semiconductor device comprising:
a laminate substrate;
a semiconductor element mounted on the laminate substrate;
an electrically conductive connection member;
a sealing material with which the semiconductor element and the electrically conductive connection member are sealed; and
a primer layer on an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member,
wherein the sealing material includes: a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer,
wherein the semiconductor device satisfies
α p ≥α 1 >α 2 ,
wherein α p represents a coefficient of linear thermal expansion of the primer layer, α 1 represents a coefficient of linear thermal expansion of the first sealing layer, and α 2 represents a coefficient of linear thermal expansion of the second sealing layer,
α c ≥15×10 −6 /° C.,
wherein α c represents a composite coefficient of linear thermal expansion of the first sealing layer and the second sealing layer,
E c ≥5 GPa or more,
wherein E c represents a composite Young's modulus of the first sealing layer and the second sealing layer, and
α c and E c are defined by the following formulae:
α c =(α 1 E 1 V 1 +α 2 E 2 (1− V 1 ))/( E 1 V 1 +E 2 (1− V 1 )), and
E c =E 1 V 1 +E 2 (1− V 1 ),
wherein E 1 represents a Young's modulus of the first sealing layer, E 2 represents a Young's modulus of the second sealing layer, and V 1 represents a volume fraction of the first sealing layer in a total volume of a sealing material portion stacked on a predetermined interface region including the primer layer (0<V 1 <1).
2. The semiconductor device according to claim 1 , wherein
the coefficient of linear thermal expansion α 1 of the first sealing layer and the coefficient of linear thermal expansion α 2 of the second sealing layer satisfy 100≥α 1 >α 2 ≥10.
3. The semiconductor device according to claim 1 , wherein
V 1 is 0.4 to 0.8 in a sealing material portion stacked on an interface region on an upper portion of the semiconductor element.
4. The semiconductor device according to claim 1 ,
wherein the first sealing layer contains a thermosetting resin base material and an inorganic filler, the second sealing layer contains a thermosetting resin base material and an inorganic filler, and a content of the inorganic filler in the first sealing layer is smaller than a content of the inorganic filler in the second sealing layer.
5. The semiconductor device according to claim 4 , wherein
the content of the inorganic filler in the first sealing layer is selected from a range of 14 to 68% by mass, and the content of the inorganic filler in the second sealing layer is selected from a range of 68 to 85% by mass.
6. The semiconductor device according to claim 3 ,
wherein the thermosetting resin base material contained in the first sealing layer and the thermosetting resin base material contained in the second sealing layer are each an epoxy resin.
7. The semiconductor device according to claim 3 ,
wherein the first sealing layer and/or the second sealing layer further contain a curing agent, and the curing agent is an acid anhydride-based curing agent.
8. The semiconductor device according to claim 1 ,
wherein the primer layer is selected from a polyamide resin, a polyimide resin, and a polyamide-imide resin.