IP Library Granted Patent US 11,514,854
Granted Patent B2
US 11,514,854 · App. 17/160,488 · Granted Nov 29, 2022

Organic light emitting diode display device including driving transistor having gate electrode under semiconductor layer

Inventors: Young-In Hwang (Suwon-si, KR); Sung Ho Kim (Suwon-si, KR); Yong Ho Yang (Suwon-si, KR); Seong Min Wang (Seongnam-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
G09G3/3233G09G3/3258H01L27/3262H01L27/3276H01L51/0097G09G2300/0819G09G2320/0257H01L27/124H01L27/1222H01L29/78648H01L29/78675H01L2251/5338
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Quick Facts
Patent No.
US 11,514,854
App. No.
17/160,488
Granted
Nov 29, 2022
Kind
B2
Abstract

An organic light emitting diode display includes a driving transistor and a compensation transistor. The driving transistor includes a fist gate electrode disposed on a substrate, a polycrystalline semiconductor layer disposed on the first gate electrode of the driving transistor and including a first electrode, a second electrode, and a channel, and a second gate electrode disposed on the polycrystalline semiconductor layer of the driving transistor. The compensation transistor includes a polycrystalline semiconductor layer including a first electrode, a second electrode, and a channel, and a gate electrode disposed on the polycrystalline semiconductor layer of the compensation transistor.

Claims (75)

1. An organic light emitting diode display, comprising:

a substrate; and

a pixel disposed on the substrate;

wherein the pixel comprises:

an organic light emitting element; and

a driving transistor that applies a current to the organic light emitting element;

wherein the driving transistor comprises:

a first gate electrode; and

a semiconductor layer comprising a channel,

wherein the first gate electrode of the driving transistor is disposed between the semiconductor layer of the driving transistor and the substrate,

wherein an overlapping electrode of the driving transistor is disposed between the substrate and the first gate electrode of the driving transistor, and

wherein the first gate electrode and the overlapping electrode are disposed in an area between the semiconductor layer of the driving transistor and the substrate, and the first gate electrode overlaps the overlapping electrode in the area between the semiconductor layer of the driving transistor and the substrate in a plan view.

2. The organic light emitting diode display of claim 1 , further comprising:

a scan line;

a data line;

a driving voltage line transmitting a driving voltage; and

an initialization voltage line,

wherein the scan line, the data line, the driving voltage line, and the initialization voltage line are connected to the pixel.

3. The organic light emitting diode display of claim 2 , wherein the driving voltage is applied to the overlapping electrode of the driving transistor.

4. The organic light emitting diode display of claim 2 , wherein the pixel further comprises:

a first switching transistor connected to the scan line and the data line; and

a second switching transistor connected to the scan line and the first gate electrode of the driving transistor.

5. The organic light emitting diode display of claim 4 , wherein the driving transistor has a bottom gate structure which has the first gate electrode of the driving transistor disposed under the semiconductor layer of the driving transistor.

6. The organic light emitting diode display of claim 5 , wherein the first switching transistor and the second switching transistor have a top gate structure, and

wherein the top gate structure has a gate electrode disposed on the semiconductor layer comprising channel.

7. The organic light emitting diode display of claim 6 , wherein one of the first switching transistor and the second switching transistor comprises a second overlapping electrode disposed between the substrate and the semiconductor layer, and

wherein the driving voltage is applied to the second overlapping electrode.

8. The organic light emitting diode display of claim 7 , wherein both of the first switching transistor and the second switching transistor have the second overlapping electrodes respectively.

9. The organic light emitting diode display of claim 6 , further comprising at least one of compensation transistors that compensates an operation of the driving transistor,

wherein the at least one of the compensation transistors has the top gate structure.

10. The organic light emitting diode display of claim 9 , wherein at least one of the compensation transistor comprises a third overlapping electrode disposed between the substrate and the semiconductor layer, and

wherein the driving voltage is applied to the third overlapping electrode.

11. The organic light emitting diode display of claim 5 , wherein the first switching transistor and the second switching transistor have the bottom gate structures respectively.

12. The organic light emitting diode display of claim 11 , further comprising at least one of compensation transistors that compensates an operation of the driving transistor,

wherein the at least one of the compensation transistors has a top gate structure, and

wherein the top gate structure has a gate electrode disposed on the semiconductor layer comprising channel.

13. The organic light emitting diode display of claim 1 , wherein the semiconductor layer comprises a polycrystalline semiconductor.

14. An organic light emitting diode display, comprising:

a substrate;

a pixel disposed on the substrate;

wherein the pixel comprises:

an organic light emitting element;

a driving transistor that applies a current to the organic light emitting element; and

wherein the driving transistor comprises:

a first gate electrode;

a semiconductor layer comprising a channel; and

a second gate electrode disposed on the semiconductor layer of the driving transistor;

wherein the first gate electrode of the driving transistor is disposed between the semiconductor layer of the driving transistor and the substrate,

wherein an overlapping electrode is disposed between the substrate and the first gate electrode of the driving transistor, and

wherein the first gate electrode and the overlapping electrode are disposed in an area between the semiconductor layer of the driving transistor and the substrate, and the first gate electrode overlaps the overlapping electrode in the area between the semiconductor layer of the driving transistor and the substrate in a plan view.

15. The organic light emitting diode display of claim 14 , further comprising:

a scan line;

a data line;

a driving voltage line transmitting a driving voltage; and

an initialization voltage line,

wherein the scan line, the data line, the driving voltage line, and the initialization voltage line are connected to the pixel.

16. The organic light emitting diode display of claim 15 , wherein the driving voltage is applied to the overlapping electrode of the driving transistor.

17. The organic light emitting diode display of claim 15 , wherein the pixel further comprises:

a first switching transistor connected to the scan line and the data line; and

a second switching transistor connected to the scan line and the first gate electrode of the driving transistor.

18. The organic light emitting diode display of claim 17 , wherein the driving transistor has a bottom gate structure which has the first gate electrode of the driving transistor disposed under the semiconductor layer of the driving transistor.

19. The organic light emitting diode display of claim 18 , wherein the first switching transistor and the second switching transistor have a top gate structure, and

wherein the top gate structure has a gate electrode disposed on the semiconductor layer comprising channel.

20. The organic light emitting diode display of claim 19 , wherein one of the first switching transistor and the second switching transistor comprises a second overlapping electrode disposed between the substrate and the semiconductor layer, and

wherein the driving voltage is applied to the second overlapping electrode.

21. The organic light emitting diode display of claim 20 , wherein both of the first switching transistor and the second switching transistor have the second overlapping electrodes respectively.

22. The organic light emitting diode display of claim 19 , further comprising at least one of compensation transistors that compensates an operation of the driving transistor,

wherein the at least one of the compensation transistors has the top gate structure.

23. The organic light emitting diode display of claim 22 , wherein at least one of the compensation transistor comprises a third overlapping electrode disposed between the substrate and the semiconductor layer, and

wherein the driving voltage is applied to the third overlapping electrode.

24. The organic light emitting diode display of claim 18 , wherein the first switching transistor and the second switching transistor have the bottom gate structures respectively.

25. The organic light emitting diode display of claim 24 , further comprising at least one of compensation transistors that compensates an operation of the driving transistor,

wherein the at least one of the compensation transistors has a top gate structure, and

wherein the top gate structure has a gate electrode disposed on the semiconductor layer comprising channel.

26. The organic light emitting diode display of claim 14 , wherein the semiconductor layer comprises a polycrystalline semiconductor.

Priority Claims (1)
KR 10-2018-0074950 · Jun 28, 2018 · national
Continuity (2)
Continuation 16356142 · Mar 18, 2019
Related Publication 20210150984A1 · May 20, 2021
Cited By (2)
US 12,374,285 US 12,731,540