On-wafer integrated laser for heat-assisted magnetic recording
An apparatus comprises a substrate. A laser is deposited above the substrate. The laser includes one or more non-self-supporting layers of crystalline material. A metallic adhesive is disposed between the laser and the substrate. The metallic adhesive is configured to adhere the laser to the substrate. A waveguide is deposited proximate the laser. The waveguide is configured to receive light from the laser and direct the light to a recording medium.
1. An apparatus comprising:
a substrate;
a laser deposited above the substrate, the laser comprising one or more non-self-supporting layers of crystalline material;
a metallic adhesive disposed between the laser and the substrate, the metallic adhesive configured to adhere the laser to the substrate and to facilitate alignment of the laser on the substrate; and
a waveguide deposited proximate the laser, the waveguide configured to receive light from the laser and direct the light to a recording medium.
2. The apparatus of claim 1 , further comprising at least one anisotropic magnetic structure disposed proximate the laser, the at least one anisotropic magnetic structure configured to align the laser on the substrate when a magnetic field is applied.
3. The apparatus of claim 2 , wherein the anisotropic magnetic structure is configured to align the laser on the substrate when heat is applied.
4. The apparatus of claim 2 , wherein the anisotropic magnetic structure comprises one or more of Fe, Ni, Co, and Pt alloys.
5. The apparatus of claim 1 , wherein the metallic adhesive is disposed along an entire surface of the substrate.
6. The apparatus of claim 1 , wherein the metallic adhesive comprises one or more of AuSn, InAg, InSn, SnAgCu, SnAg, SnCu, SnZnCu, and InAg.
7. The apparatus of claim 1 , wherein at least a portion of the substrate is configured to act as a heat sink of the laser.
8. The apparatus of claim 1 , wherein the metallic adhesive has a melting point in a range of about 180 degrees C. to about 210 degrees C.
9. An apparatus comprising:
a substrate;
a laser deposited above the substrate, the laser comprising one or more non-self-supporting layers of crystalline material;
a metallic adhesive disposed between the laser and the substrate, the metallic adhesive configured to adhere the laser to the substrate;
at least one anisotropic magnetic structure disposed proximate the laser; and
a waveguide deposited proximate the laser, the waveguide configured to receive light from the laser and direct the light to a recording medium.
10. The apparatus of claim 9 , wherein the at least one anisotropic magnetic structure is configured to align the laser on the substrate when a magnetic field is applied.
11. The apparatus of claim 9 , wherein the anisotropic magnetic structure comprises one or more of Fe, Ni, Co, and Pt alloys.
12. The apparatus of claim 9 , wherein the metallic adhesive is disposed along an entire surface of the substrate.
13. The apparatus of claim 9 , wherein the metallic adhesive comprises one or more of AuSn, InAg, InSn, SnAgCu, SnAg, SnCu, SnZnCu, and InAg.
14. The apparatus of claim 9 , wherein at least a portion of the substrate is configured to act as a heat sink of the laser.
15. The apparatus of claim 9 , wherein the metallic adhesive has a melting point in a range of about 180 degrees C. to about 210 degrees C.
16. A method, comprising:
depositing a metallic adhesive on a substrate;
transfer printing a laser diode unit over the metallic adhesive;
depositing at least one anisotropic magnetic structure proximate the laser;
applying heat sufficient to melt the metallic adhesive;
applying a magnetic field to the at least one anisotropic structure at a time when the heat is being applied, the applied heat and the magnetic field configured to align the laser diode on the substrate; and
depositing a waveguide core over the laser diode unit, wherein the thermally conductive underlayer is configured to provide thermal coupling between the laser diode unit and the substrate and to sink heat away from the laser diode unit.
17. The method of claim 16 , wherein the metallic adhesive comprises one or more of AuSn, InAg, InSn, SnAgCu, SnAg, SnCu, SnZnCu, InAg.
18. The method of claim 16 , wherein depositing a metallic adhesive on the substrate comprises depositing a continuous sheet disposed directly on substantially an entire first surface the substrate.
19. The method of claim 16 , wherein applying heat sufficient to melt the metallic adhesive comprises applying heat of a temperature in a range of about 180 degrees C. to about 210 degrees C.
20. The method of claim 16 , further comprising, after applying heat to the metallic substrate, cooling down the metallic substrate while applying the magnetic field.