Methods of forming semiconductor packages with back side metal
Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.
1. A semiconductor package comprising:
a substrate having a first side and a second side, the second side opposite the first side;
a device coupled over the first side of the substrate;
a metal layer coupled to the second side of the substrate, the metal layer comprising a ridge formed along an outer perimeter of the semiconductor package; and
a molding compound coupled over the device and coupled into a notch within the metal layer;
wherein the ridge extends to an outermost edge of a sidewall of the semiconductor package.
2. The semiconductor package of claim 1 , wherein the molding compound covers an interface between the second side of the substrate and the metal layer.
3. The semiconductor package of claim 1 , wherein the ridge comprises a continuous ridge.
4. The semiconductor package of claim 1 , wherein a height of the ridge is substantially the same as a height of the notch.
5. The semiconductor package of claim 1 , wherein the molding compound covers a plurality of sidewalls of the substrate.
6. The semiconductor package of claim 1 , wherein the metal layer comprises one of copper plating, nickel plating, gold plating, tin/silver plating, and any combination thereof.
7. A method of aligning a wafer comprising:
providing a wafer comprising a plurality of devices;
forming one or more trenches in a first side of the wafer;
applying a molding compound to the first side of the wafer, wherein the molding compound fills the one or more trenches;
forming one or more steps between the molding compound and the wafer through thinning the second side of the wafer;
applying a back metallization over the one or more steps between the molding compound and the wafer; and
aligning the wafer using the back metallization over the one or more steps between the molding compound and the wafer.
8. The method of claim 7 , further comprising grinding the first side of the wafer to expose one or more bumps comprised in the plurality of devices.
9. The method of claim 7 , wherein thinning the second side of the wafer comprises dry etching.
10. The method of claim 7 , wherein a width of the one or more trenches each comprise a width of 50 to 100 microns.
11. The method of claim 7 , wherein the one or more steps comprise a height of 3 to 10 microns.
12. The method of claim 7 , wherein the back metallization comprises sputtered Ti/Cu.
13. The method of claim 7 , wherein the back metallization comprises one of copper plating, nickel plating, gold plating, tin/silver plating, and any combination thereof.
14. A method of forming a semiconductor package, the method comprising:
providing a wafer comprising a plurality of devices;
forming one or more trenches in a first side of the wafer;
filling the one or more trenches with a molding compound;
thinning a second side of the wafer to form one or more steps between the molding compound and the wafer, wherein the molding compound extends past the second side of the wafer after the second side of the wafer is thinned;
applying a back metallization to the second side of the wafer and to the molding compound;
forming one or more steps in the back metallization applied to the molding compound; and
singulating the wafer at the one or more steps in the back metallization to form a plurality of semiconductor packages.
15. The method of claim 14 , further comprising using the one or more steps in the back metallization to align the wafer while singulating the wafer.
16. The method of claim 14 , wherein the one or more trenches are formed between devices of the plurality of devices.
17. The method of claim 14 , wherein the one or more trenches each comprise a width of 50 to 100 microns.
18. The method of claim 14 , wherein the one or more steps between the molding compound and the wafer each comprise a height of 3 to 10 microns.
19. The method of claim 14 , wherein the back metallization comprises sputtered Ti/Cu.
20. The method of claim 14 , wherein the back metallization comprises one of copper plating, nickel plating, gold plating, tin/silver plating, and any combination thereof.