Composition, pattern-forming method, and compound-producing method
A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar 1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar 2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R 2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R 3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.
1. A composition which enables a resist underlayer film to be formed, the composition comprising:
a product of an acid-catalyzed condensation reaction of a compound represented by formula (A) and a compound represented by formula (B); and
a solvent,
wherein,
in the formula (A), Ar 1A represents an arene having 6 to 30 ring atoms, or a heteroarene having 5 to 30 ring atoms, wherein the arene having 6 to 30 ring atoms and the heteroarene having 5 to 30 ring atoms are each unsubstituted or substituted with a group which does not contain an oxygen atom, and the arene having 6 to 30 ring atoms is anthracene, phenanthrene, tetracene, pyrene, pentacene, coronene, perylene, biphenyl, dimethylbiphenyl, diphenylbiphenyl, fluorene, or 9,9-diphenylfluorene, and
in the formula (B), Ar 2A represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R 2A represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, or Ar 2A and R 2A taken together represent a ring structure having 3 to 20 ring atoms together with the carbon atom to which Ar 2A and R 2A bond; and R X presents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
2. A pattern-forming method comprising:
applying the composition according to claim 1 directly or indirectly on a substrate to form a resist underlayer film;
applying a composition for forming a resist film directly or indirectly on the resist underlayer film to form a resist film;
exposing the resist film to a radioactive ray; and
developing the resist film exposed.
3. The pattern-forming method according to claim 2 , further comprising before the applying of the composition for forming a resist film,
forming a silicon-containing film directly or indirectly on the resist underlayer film formed.
4. The pattern-forming method according to claim 2 , wherein Ar 2A and R 2A in the formula (B) taken together represent the ring structure having 3 to 20 ring atoms together with the carbon atom to which Ar 2A and R 2A bond, and the ring structure having 3 to 20 ring atoms is a fluorene structure.
5. The composition according to claim 1 , wherein R 2A in the formula (1) is a monovalent aromatic hydrocarbon group.
6. The composition according to claim 1 , wherein Ar 2A and R 2A in the formula (B) taken together represent the ring structure having 3 to 20 ring atoms together with the carbon atom to which Ar 2A and R 2A bond, and the ring structure having 3 to 20 ring atoms is an aromatic ring structure.
7. The composition according to claim 6 , wherein the ring structure having 3 to 20 ring atoms is a fluorene structure.