Deposition of tellurium-containing thin films
Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.
1. A method of depositing a film, the method comprising:
exposing a substrate to a tellurium precursor in a processing chamber to deposit a film on the substrate, the tellurium precursor having a structure of
wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 are independently selected from fluorocarbons, heteroatom-containing hydrocarbons, silicon containing groups (e.g. SiR 3 ), and germanium-containing groups (e.g. GeR 3 ), and n is a number in a range from 0 to 5;
purging the processing chamber of the tellurium precursor,
exposing the substrate to a reactant to react with the film to form an elemental tellurium film on the substrate; and
purging the processing chamber of the reactant.
2. The method of claim 1 , wherein the reactant comprises a reducing agent.
3. The method of claim 1 , wherein the substrate comprises one or more of silicon (Si), silicon dioxide (SiO 2 ), silicon oxide (SiO), silicon oxycarbide (SiOC), platinum (Pt), titanium nitride (TiN), tantalum nitride (TaN), copper (Cu), cobalt (Co), tungsten (W), ruthenium (Ru) or molybdenum (Mo).
4. The method of claim 1 , wherein the substrate is maintained at a temperature in a range of about 20° C. to about 400° C.
5. The method of claim 1 , further comprising repeating the method to provide a tellurium film having a thickness of about 0.3 to about 100 nm.
6. The method of claim 1 , wherein the tellurium precursor comprises
7. The method of claim 1 , wherein the tellurium precursor is Te(OCH 2 CF 3 ) 4 .
8. A method of depositing a film, the method comprising:
exposing a substrate to a tellurium precursor in a processing chamber to deposit an elemental tellurium film on the substrate, the tellurium precursor having a structure of
wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 are independently selected from fluorocarbons, heteroatom-containing hydrocarbons, silicon containing groups (e.g. SiR 3 ), and germanium-containing groups (e.g. GeR 3 ), and n is a number in a range from 0 to 5;
purging the processing chamber of the tellurium precursor,
exposing the substrate to one or more of a germanium precursor and an antimony precursor to react with the elemental tellurium film to form one or more of a germanium tellurium film, germanium tellurium antimony film, or antimony tellurium film on the substrate; and
purging the processing chamber of the germanium precursor and the antimony precursor.
9. The method of claim 8 , wherein the substrate comprises one or more of silicon (Si), silicon dioxide (SiO 2 ), silicon oxide (SiO), silicon oxycarbide (SiOC), platinum (Pt), titanium nitride (TiN), tantalum nitride (TaN), copper (Cu), cobalt (Co), tungsten (W), ruthenium (Ru) or molybdenum (Mo).
10. The method of claim 8 , wherein the substrate is maintained at a temperature in a range of about 20° C. to about 400° C.
11. The method of claim 8 , wherein the tellurium precursor is Te(OCH 2 CF 3 ) 4 .
12. A method of depositing a film, the method comprising:
selectively forming an elemental tellurium film in a process cycle comprising sequential exposure of a substrate to a tellurium precursor, purge gas, reactant, and purge gas, the tellurium precursor having a structure of
wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 are independently selected from fluorocarbons, heteroatom-containing hydrocarbons, silicon containing groups (e.g. SiR 3 ), and germanium-containing groups (e.g. GeR 3 ), and n is a number in a range from 0 to 5.
13. The method of claim 12 , wherein the reactant comprises one or more a reducing agent, a germanium precursor, and an antimony precursor.
14. The method of claim 12 , wherein the process cycle is maintained at a temperature in a range of about 20° C. to about 400° C.
15. The method of claim 12 , wherein the tellurium precursor is Te(OCH 2 CF 3 ) 4 .