Memory device which generates operation voltages in parallel with reception of an address

1. A method of controlling a memory device, the method comprising:

receiving an address indicating a region in a memory cell array; and

generating one or more voltages supplied to the memory cell array before completion of receiving the address.

2. The method according to claim 1 , wherein the memory device includes:

the memory cell array,

a voltage generation circuit generating the one or more voltages supplied to the memory cell array,

an input/output circuit receiving the address indicating the region in the memory cell array, and

a control circuit controlling operations of the memory cell array.

3. The method according to claim 1 , further comprising:

supplying the voltages to a plurality of blocks in the memory cell array when a word line address of the address is received, and

stopping supply of the voltages to one or more non-selected blocks other than a selected block corresponding to a block address of the address in the plurality of blocks when the block address is received after the word line address, based on the block address.

4. The method according to claim 1 , wherein:

rows of the memory cell array are controlled based on a first signal, and

a signal level of the first signal is changed from a first level to a second level in a period in which a ready/busy signal indicates a ready state.

5. The method according to claim 4 , wherein:

calculation processing using the first signal and the address is performed, and

a signal level of a second signal selecting one block corresponding to the address in the plurality of blocks of the memory cell array is controlled, based on a result of the calculation processing.

6. The method according to claim 4 , wherein the signal level of the first signal is set at the second level after reception of the address.

7. The method according to claim 4 , wherein supply of the voltages is started in response to the second level of the first signal.

8. The method according to claim 1 , further comprising:

starting supply of the voltages to the memory cell array based on a first command received before the address, and

performing an operation to the memory cell array based on a second command received between the first command and the address.

9. The method according to claim 1 , further comprising:

supplying the voltages to a plurality of word lines of the memory cell array during reception of the address, and

stopping, after reception of a word line address in the address, supply of a first voltage of the voltages to a selected word line corresponding to the word line address and continuing supply of the voltages to one or more non-selected word lines other than the selected word line.

10. The method according to claim 1 , wherein:

a current flows in an interconnect connected to the memory cell array,

the current has a first current value in a first period of reception of the address,

the current has a second current value in a second period in which the voltages are supplied to the memory cell array, and

the first current value is higher than the second current value.

11. The method according to claim 10 , wherein:

the current has a third current value in a third period in which a ready/busy signal indicates a busy state, and

the third current value is equal to or less than the second current value.

12. The method according to claim 1 , further comprising:

measuring a temperature of a chip including the memory cell array, and

setting voltage values of the voltages based on the temperature measured before reception of the address.

13. The method according to claim 12 , further comprising:

acquiring a first temperature in a period in which an operation of a first command corresponding to the address is executed; and

executing an operation of a second command supplied after the operation of the first command using the voltage values of the voltages set based on the first temperature.

14. The method according to claim 12 , wherein the temperature is periodically measured in a first period in which a ready/busy signal indicates a ready state and a second period in which a ready/busy signal indicates a busy state.

15. The method according to claim 1 , further comprising:

transferring the voltages to the memory cell array based on a third signal, the third signal being activated during reception of the address.

16. The method according to claim 15 , wherein:

a second voltage of the voltages is transferred to the memory cell array in a period in which a signal level of the third signal is a first level, the second voltage having a first voltage value,

a third voltage of the voltages is transferred to the memory cell array in response to a timing in which the signal level of the third signal changes from the first level to a second level, the third voltage having a second voltage value higher than the first voltage value, and

a fourth voltage of the voltages is transferred to the memory cell array in response to a timing in which the signal level of the third signal changes from the second level to the first level, the fourth voltage having a third voltage value being equal to or higher than the second voltage value.

17. The method according to claim 1 , wherein supply of the voltages to the memory cell array is speculatively started before completion of decoding of the address.

18. The method according to claim 1 , wherein supply of the voltages to the memory cell array is started at a timing self-aligned to completion of decoding of the address.

19. The method according to claim 1 , wherein the memory cell array includes a memory cell including a charge storage layer.

20. The method according to claim 1 , wherein the memory device is a random access memory.