Low power sensor for NO
Detection and capture of toxic nitrogen oxides (NO x ) is important for emissions control of exhaust gases and general public health. The low power sensor provides direct electrically detection of trace (0.5-5 ppm) NO 2 at relatively low temperatures (50° C.) via changes in the electrical properties of nitrogen-oxide-capture active materials. For example, the high impedance of MOF-74 enables applications requiring a near-zero power sensor or dosimeter, such as for smart industrial systems and the internet of things, with 0.8 mg MOF-74 active material drawing <15 pW for a macroscale sensor 35 mm 2 area.
1. A low power nitrogen oxide sensor, comprising:
an electrically insulating substrate;
a pair interdigitated electrodes disposed on the substrate;
a nitrogen-oxide-capture film disposed on the pair of interdigitated electrodes and the substrate; and
a frequency response analyzer configured to measure the impedance response of the nitrogen-oxide-capture film when nitrogen oxide is absorbed in the nitrogen-oxide-capture film and an alternating voltage is applied to the pair of interdigitated electrodes.
2. The sensor of claim 1 , wherein the nitrogen-oxide-capture film comprises a metal organic-framework (MOF) material.
3. The sensor of claim 2 , wherein the MOF material comprises M-MOF-74, wherein M is a metal.
4. The sensor of claim 3 , wherein the metal is cobalt, magnesium, or nickel.
5. The sensor of claim 2 , wherein the MOF material comprises RE-DOBDC, where RE is a rare-earth element and DOBDC is dihydroxyterephthalic acid.
6. The sensor of claim 1 , wherein the nitrogen-oxide-capture film comprises a zeolite material.
7. The sensor of claim 6 , wherein the zeolite material comprises an SSZ-13 or SAPO zeolite.
8. The sensor of claim 1 , wherein the nitrogen-oxide-capture film has a thickness of less than 100 μm.
9. The sensor of claim 8 , wherein the nitrogen-oxide-capture film has a thickness of less than 10 μm.
10. The sensor of claim 1 , wherein the nitrogen-oxide-capture film is dropcast deposited on the pair of interdigitated electrodes and the substrate.
11. The sensor of claim 1 , wherein the nitrogen-oxide-capture film comprises a continuous MOF thin film grown from a functionalized surface of the substrate.
12. The sensor of claim 11 , wherein the functionalized surface comprises a carboxylate functionalized surface.
13. The sensor of claim 1 , wherein the substrate comprises a silica glass substrate.
14. The sensor of claim 1 , wherein the alternating voltage has a frequency between 1 mHz and 1 MHz.
15. The sensor of claim 14 , wherein the frequency corresponds to a RC transition frequency that leverages the capacitive component of the MOF to increase the signal strength while still enabling the larger signal change associated with the DC resistance to be calculated.
16. The sensor of claim 1 , further comprising a high impedance interface connected in series with the frequency response analyzer.
17. The sensor of claim 1 , wherein the sensor dissipates less than 10 nW when operating.
18. The sensor of claim 17 , wherein the sensor dissipates less than 15 pW when operating.
19. The sensor of claim 1 , wherein the sensor has a NO 2 detection limit of less than 0.5 ppm.
20. The sensor of claim 1 , wherein an operating temperature of the sensor is less than 75° C.
21. The sensor of claim 1 , wherein the nitrogen oxide comprises NO 2 .
22. A method for fabricating a low power nitrogen oxide sensor, comprising;
providing a pair of interdigitated electrodes on a surface of a substrate,
functionalizing the surface of the substrate, and
growing a continuous MOF thin film from the functionalized surface.
23. The method of claim 22 , wherein the substrate comprises a silica glass and the functionalizing step comprises:
immersing the substrate in an acetonitrile solution comprising an aminosilane, to produce an amine-terminated surface on the substrate,
immersing the amine-terminated surface in a solution comprising succinic anhydride, thereby converting the amine to a carboxylic acid terminated group and producing a carboxylate functionalized surface on the substrate.
24. The method of claim 23 , wherein the aminosilane comprises 4-aminopropyl)triethoxysilane.
25. The method of claim 22 , wherein the MOF thin film comprises a M-MOF-74, wherein M is a metal.