Magnetoresistive effect element and method of manufacturing the same
A magnetoresistive-effect element includes a first ferromagnet, a first layer on the first ferromagnet and a first layer comprising magnesium oxide, a second ferromagnet on the first layer, a metal layer above the second ferromagnet and a second layer on the metal layer. The second layer and the magnesium oxide have a selected ratio larger than 1 to etching by ion beams.
1. A magnetoresistive-effect element comprising:
a first ferromagnet;
a first layer on the first ferromagnet, the first layer comprising magnesium oxide;
a second ferromagnet on the first layer;
a metal layer above the second ferromagnet; and
a second layer on the metal layer,
wherein:
the second layer and the magnesium oxide have a selected ratio larger than 1 to etching by ion beams, and
the second layer comprises at least one of silver sulfate (I), an aluminum chloride, aluminum fluoride, mullite, aluminum sulfate, an arsenic pentoxide, arsenic trioxide, an aluminum oxide, a witherite, barium fluoride, barium nitrate, alexandrite, calcium hydroxide, a calcium chloride, calcite, fluorite, dolomite, a calcium oxide, perovskite, malachite, a fayalite, lanthanum oxide, magnesium hydroxide, a forsterite, spinel, magnesite, a cryolite, a beta2-tridiymite, samarium oxide, and rutile.
2. The element according to claim 1 , wherein:
the second layer comprises a crystalline compound.
3. The element according to claim 1 , wherein:
the metal layer contains tantalum, and
the second layer comprises a crystalline compound.
4. The element according to claim 1 , wherein:
the metal layer contains tantalum.