Semiconductor device and method of operating the same
A semiconductor memory device includes a memory string and a control logic. The memory string is connected between a common source line and a bit line and includes at least one first select transistor, a plurality of memory cells, and a plurality of second select transistors. The control logic is configured to apply a first voltage to a first group among second select lines respectively connected to the second select transistors, float a second group among the second select lines and then apply an erase voltage to the common source line, during an erase operation.
1. A semiconductor memory device comprising:
a memory string connected between a common source line and a bit line and including at least one first select transistor, a plurality of memory cells, and a plurality of second select transistors; and
control logic configured to apply a first voltage to a first group among second select lines respectively connected to the second select transistors, float a second group among the second select lines and then apply an erase voltage to the common source line, during an erase operation,
wherein as the erase voltage is applied to the common source line, a voltage of the second group among the second select lines is increased by coupling.
2. The semiconductor memory device of claim 1 , wherein the first voltage generates a gate induced drain leakage (GIDL) current in the second select transistors connected to the second select lines in the first group.
3. The semiconductor memory device of claim 1 , wherein the voltage of the second select lines of the second group is increased to a level that turns on the second select transistors connected to the second select lines of the second group.
4. The semiconductor memory device of claim 1 , wherein the second select lines of the second group are positioned adjacent to the common source line.
5. The semiconductor memory device of claim 1 ,
wherein during the erase operation, the control logic is further configured to precharge the second group to a second voltage higher than the first voltage, and
wherein the control logic floats the second group after the precharge operation is performed.
6. The semiconductor memory device of claim 1 ,
wherein during the erase operation, the control logic is further configured to precharge the second group and a third group among the second select lines to a second voltage higher than the first voltage, and
wherein the control logic floats the second group after the precharge operation is performed.
7. The semiconductor memory device of claim 6 , wherein the third group is positioned between the first group and the second group among the second select lines.
8. The semiconductor memory device of claim 1 ,
wherein during the erase operation, the control logic is further configured to apply the first voltage to a third group among the second select lines,
wherein the control logic is further configured to float the third group after the apply operation is performed, and
wherein the control logic applies the erase voltage to the common source line after floating the second group and the third group.
9. The semiconductor memory device of claim 8 , wherein the third group is positioned between the first group and the second group among the second select lines.
10. A method of operating a semiconductor memory device including a cell string including first and second drain select transistors, a plurality of memory cells, a first source select transistor, and a second source select transistor sequentially connected between a bit line and a common source line, the method comprising:
applying a first voltage to a first source select line connected to the first source select transistor;
floating a second source select line connected to the second source select transistor; and
increasing a voltage of the second source select line by applying an erase voltage to the common source line,
wherein during the floating of the second source select line and the applying of the erase voltage to the common source line, the first voltage is applied to the first source select line.
11. The method of claim 10 , further comprising applying the first voltage to the second source select line before the floating operation is performed.
12. The method of claim 10 , further comprising applying a second voltage greater than the first voltage to the second source select line before the floating operation is performed.
13. The method of claim 10 , wherein the first voltage is a ground voltage.
14. The method of claim 10 , wherein the voltage of the second source select line is increased to a level that turns on the second source select transistor.
15. The method of claim 10 , further comprising: floating the first source select line after applying the first voltage to the first source select line connected to the first source select transistor.
16. The method of claim 10 , further comprising:
applying the first voltage to a first drain select line connected to the first drain select transistor before floating the second source select line;
floating a second drain select line connected to the second drain select transistor; and
increasing a voltage of the second drain select line by applying the erase voltage to the bit line.