IP Library Granted Patent US 11,557,694
Granted Patent B2
US 11,557,694 · App. 17/179,729 · Granted Jan 17, 2023

Light emitting device

Inventors: Chien Cheng Huang (Hsinchu, TW); Kuo-Wei Yen (Hsinchu, TW); Yu-Wei Kuo (Hsinchu, TW); Yao-Wei Yang (Hsinchu, TW); Pei-Hsiang Tseng (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
H01L33/145H01L33/0075H01L33/24H01L33/32H01L33/38H01L33/42H01L33/44H01L2933/0016H01L2933/0025
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Quick Facts
Patent No.
US 11,557,694
App. No.
17/179,729
Granted
Jan 17, 2023
Kind
B2
Abstract

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

Claims (19)

1. A light emitting device, comprising:

a plurality of light emitting stacked layers, comprising a first surface and a second surface, wherein the second surface is electrically opposite to the first surface;

a mesa structure;

a current blocking layer disposed on the first surface, comprising a sidewall; and

a transparent conductive layer disposed on the first surface; and

a first pad electrode, disposed on the transparent conductive layer and on the first surface;

wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and

wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

2. The light emitting device as claimed in claim 1 , wherein the light emitting stacked layers comprise p-type layers, n-type layers, and an active layer sandwiched between one of the p-type layers and one of the n-type layers, and the mesa structure comprises an exposed surface of one of the n-type layers.

3. The light emitting device as claimed in claim 2 , further comprising a second pad electrode disposed on the exposed surface.

4. The light emitting device as claimed in claim 1 , wherein the light emitting stacked layers comprise p-type layers, n-type layers, and an active layer sandwiched between one of the p-type layers and one of the n-type layers.

5. The light emitting device as claimed in claim 4 , wherein the first pad electrode electrically connects the p-type layers; and wherein the light emitting device further comprises a second pad electrode electrically connects the n-type layers.

6. The light emitting device as claimed in claim 1 , wherein a sidewall of the transparent conductive layer and a sidewall of the light emitting stacked layers are substantially flush located adjacent to one end of the second surface of the light emitting stacked layers and the mesa structure, and adjacent to one end of the first surface of the light emitting stacked layers.

7. The light emitting device as claimed in claim 1 , wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is between 1 μm and 2 μm.

8. The light emitting device as claimed in claim 1 , wherein a sidewall of the current blocking layer comprises a first surface section and a second surface section having different slopes.

9. The light emitting device as claimed in claim 8 , wherein the first surface section is closer to the first surface of the light emitting stacked layers than the second surface section is; and wherein the first surface section has a slope smaller than that of the second surface section.

10. The light emitting device as claimed in claim 8 , wherein the first surface section is closer to the first surface of the light emitting stacked layers than the second surface section is; and wherein the first surface section has a slope of between 10 degrees and 50 degrees and the second surface section has a slope of between 50 degrees and 70 degrees.

11. The light emitting device as claimed in claim 1 , wherein the current blocking layer comprises an opening and the first pad electrode electrically connecting the light emitting stacked layers through the opening.

12. The light emitting device as claimed in claim 1 , further comprising a passivation layer disposed on the first surface and exposing parts of the first pad electrode.

Assignments (2)
CHANGE OF NAME Recorded Feb 18, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075171/0402 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2021
From: HUANG, CHIEN CHENG; YEN, KUO-WEI; KUO, YU-WEI; YANG, YAO-WEI; TSENG, PEI-HSIANG
To: EPISTAR CORPORATION
Reel/Frame 055333/0683 →
Continuity (4)
Continuation 16028657 · Jul 6, 2018
Continuation 15626170 · Jun 18, 2017
Division 14985165 · Dec 30, 2015
Related Publication 20210249561A1 · Aug 12, 2021