Operating a memory array based on an indicated temperature

1. A method, comprising:

receiving a signal that initializes an operation of a memory component that comprises a memory array;

determining a temperature of the memory component based at least in part on receiving the signal;

using a set of parameters for operation of the memory array based at least in part on determining that the temperature of the memory component has exceeded a threshold, the set of parameters comprising one or more voltage parameters, one or more timing parameters, or both;

generating an indication that the temperature of the memory component has exceeded the threshold based at least in part on the determining;

generating a second indication that a rate of change associated with the temperature of the memory component has exceeded a second threshold based at least in part on the determining; and

processing a command for accessing the memory array that is received from a host device based at least in part on generating the indication, the second indication, or both.

2. The method of claim 1 , further comprising:

generating, before generating the indication to the host device, a second indication that the temperature for the memory component is below the threshold based at least in part on the determining.

3. The method of claim 1 , further comprising:

generating a second indication that the temperature of the memory component has exceeded a second threshold based at least in part on the determining; and

refraining from processing a second command for accessing the memory array based at least in part on generating the second indication.

4. The method of claim 1 , further comprising:

transmitting the indication to the host device or a register, or both, based at least in part on generating the indication.

5. The method of claim 1 , further comprising:

receiving, before the command is received and the indication that the temperature of the memory component has exceeded the threshold is generated, a second command from the host device; and

refraining from processing the second command based at least on the temperature of the memory component being below the threshold.

6. The method of claim 1 , further comprising:

receiving, from the host device, the command before the indication that the temperature of the memory component has exceeded the threshold is generated; and

delaying processing of the command until the indication that the temperature of the memory component has exceeded the threshold is generated.

7. The method of claim 1 , further comprising:

performing, before the indication that the temperature of the memory component has exceeded the threshold is generated, a sequence of operations for sensing logic states from the memory array and writing back the logic states to the memory array while indeterminate data is stored in the memory array.

8. The method of claim 1 , further comprising:

comparing the temperature of the memory component with the threshold; and

determining that the temperature of the memory component has exceeded the threshold based at least in part on the comparing, wherein the indication is generated based at least in part on the determining.

9. The method of claim 1 , further comprising:

comparing the temperature of the memory component with a second threshold; and

determining that the temperature of the memory component has exceeded the second threshold based at least in part on the comparing, wherein a second indication is generated based at least in part on the determining.

10. The method of claim 1 , wherein the threshold is based at least in part on a second temperature level, wherein the operation of the memory component meets a set of specifications associated with the memory array when the set of parameters for operating the memory component is used and the temperature of the memory component reaches the second temperature level.

11. The method of claim 1 , further comprising:

receiving a second indication of the threshold from the host device, wherein the threshold is based at least in part on a second temperature level, and wherein the operation of the memory component meets a set of specifications associated with the memory array when the set of parameters for operating the memory component is used and the temperature of the memory component reaches the second temperature level.

12. The method of claim 1 , further comprising:

storing a value corresponding to the indication that the temperature of the memory component has exceeded the threshold based at least in part on the generating;

receiving, from the host device, a request to read the stored value; and

transmitting the stored value to the host device based at least in part on receiving the request.

13. The method of claim 1 , wherein the temperature of the memory component increases from a first temperature after the signal that initializes the operation of the memory component is received based at least in part on the operation of the memory component, and wherein the indication is generated based at least in part on the temperature of the memory component increasing.

14. The method of claim 1 , wherein one or more components that are thermally coupled with the memory component are operated based at least in part on the signal, and wherein the temperature of the memory component increases from a first temperature after the signal is received based at least in part on the operation of the one or more components, and wherein the indication is generated based at least in part on the temperature of the memory component increasing.

15. A method, comprising:

receiving a signal that initializes an operation of a memory component that comprises a memory array;

determining a temperature of the memory component based at least in part on receiving the signal;

using a set of parameters for operation of the memory array based at least in part on determining that the temperature of the memory component has exceeded a threshold, the set of parameters comprising one or more voltage parameters, one or more timing parameters, or both;

generating an indication that the temperature of the memory component has exceeded the threshold based at least in part on the determining;

receiving, before the indication that the temperature of the memory component has exceeded the threshold is generated, a command from a host device to perform the operation for sensing logic states from the memory array and writing back the logic states to the memory array while indeterminate data is stored in the memory array; and

processing a command for accessing the memory array that is received from the host device based at least in part on generating the indication.

16. A method, comprising:

identifying a command for accessing a memory array of a memory component;

delaying a transmission of the command to the memory component based at least in part on a temperature of the memory component;

receiving an indication that the temperature of the memory component has exceeded a threshold based at least in part on the indication;

receiving a second indication that a rate of change associated with the temperature of the memory component has exceeded a second threshold based at least in part on the second indication;

configuring a set of parameters for operating the memory array based at least in part on the indication that the temperature of the memory component has exceeded the threshold, the second indication that the rate of has exceeded a second threshold, or both; and

transmitting, to the memory component, an initial command for accessing the memory array of the memory component using the set of parameters based at least in part on determining that the temperature of the memory component has exceeded the threshold.

17. The method of claim 16 , further comprising:

determining that the temperature of the memory component has exceeded the threshold based at least in part on receiving the indication, wherein the initial command is sent based at least in part on the determining.

18. The method of claim 16 , further comprising:

receiving a second indication that the temperature of the memory component has exceeded a second threshold;

determining that the temperature of the memory component has exceeded the second threshold based at least in part on the second indication;

configuring a second set of parameters for operating the memory array based at least in part on determining that the temperature of the memory component has exceeded the second threshold; and

transmitting the second set of parameters to the memory array to the memory component.

19. The method of claim 16 , further comprising:

receiving, before the indication that the temperature of the memory component has exceeded the threshold is received, a second indication that the temperature of the memory component is below the threshold.

20. The method of claim 19 , wherein the transmission of the command to the memory component is delayed based at least in part on receiving the second indication that the temperature of the memory component is below the threshold.

21. The method of claim 19 , further comprising:

transmitting, before receiving the indication that the temperature of the memory component has exceeded the threshold, a second command directing the memory component to perform a sequence of operations for sensing logic states from the memory array and writing back the logic states to the memory array while indeterminate data is stored in the memory array.

22. The method of claim 16 , further comprising:

transmitting, to the memory component, a second indication of the threshold, wherein the threshold is based at least in part on a second temperature level, wherein an operation of the memory component meets a set of specifications associated with the memory array when the set of parameters for operating the memory component is used and the temperature of the memory component reaches the second temperature level.

23. The method of claim 16 , further comprising:

reading a register comprising a value that indicates the temperature of the memory component, wherein the initial command is sent based at least in part on the value indicating that the temperature of the memory component has exceeded the threshold.

24. An apparatus, comprising:

a memory array; and

a memory controller that is coupled with the memory array and is operable to:

determine a temperature of at least a portion of the apparatus based at least in part on a signal that initializes an operation of the apparatus being received;

use a set of parameters for operation of the memory array based at least in part on the determining, the set of parameters comprising one or more voltage parameters, one or more timing parameters, or both;

generate an indication that the temperature of the at least the portion of the apparatus has exceeded a threshold based at least in part on the determining;

generate a second indication that a rate of change associated with the temperature of the portion of the apparatus has exceeded a second threshold based at least in part on the determining; and

process a command for accessing the memory array that is received from a host device based at least in part on generating the indication, the second indication, or both.

25. The apparatus of claim 24 , wherein the memory controller is further operable to:

generate, before the indication is generated, a second indication that the temperature for the apparatus is below the threshold based at least in part on the determining.

26. The apparatus of claim 24 , wherein the memory controller is further operable to:

transmit the indication to the host device or a register, or both, based at least in part on generating the indication.

27. An apparatus, comprising:

a memory controller that is operable to:

identify a command for accessing a memory array of a memory component;

delay a transmission of the command to the memory component based at least in part on a temperature of the memory component;

receive an indication that the temperature of the memory component has exceeded a threshold based at least in part on the indication;

receive a second indication that a rate of change associated with the temperature of the memory component has exceeded a second threshold based at least in part on the second indication;

configure a set of parameters for operating the memory array based at least in part on the indication, the second indication, or both; and

transmit, to the memory component using the set of parameters, an initial command for accessing the memory array of the memory component based at least in part on determining that the temperature of the memory component has exceeded the threshold.

28. The apparatus of claim 27 , wherein the memory controller is further operable to:

receive, before the indication that the temperature of the memory component has exceeded the threshold is received, a second indication that the temperature of the memory component is below the threshold.

29. The apparatus of claim 27 , wherein the memory controller is further operable to:

receive a second indication that the temperature of the memory component has exceeded a second threshold;

determine that the temperature of the memory component has exceeded the second threshold based at least in part on the second indication;

configure a second set of parameters for operating the memory array based at least in part on determining that the temperature of the memory component has exceeded the second threshold; and

transmit the second set of parameters for operating the memory array to the memory component.