Display panel, data processor, and method for manufacturing display panel
Provided is a novel display panel that is highly convenient or reliable, a novel data processor that is highly convenient or reliable, or a method for manufacturing a novel display panel that is highly convenient or reliable. The display panel includes a pixel and a terminal electrically connected to the pixel. The pixel includes a first insulating film, a first contact portion in a first opening provided in the first insulating film, a pixel circuit electrically connected to the first contact portion, a second contact portion electrically connected to the pixel circuit, a first display element electrically connected to the first contact portion, and a second display element electrically connected to the second contact portion. The first insulating film includes a region lying between the first display element and the second display element. The terminal includes a surface at which contact with other component can be made.
1. A semiconductor device comprising a pixel, the pixel comprising:
a first transistor;
a first display element;
a second transistor;
a second display element;
a third transistor;
a first wiring electrically connected to one of a source electrode and a drain electrode of the first transistor and one of a source electrode and a drain electrode of the second transistor;
a second wiring electrically connected to a gate of the first transistor;
a third wiring electrically connected to a gate of the second transistor;
a fourth wiring electrically connected to one of a source electrode and a drain electrode of the third transistor;
a fifth wiring electrically connected to a first electrode of the first display element; and
a sixth wiring electrically connected to a first electrode of the second display element,
wherein the other of the source electrode and the drain electrode of the first transistor is directly connected to a second electrode of the first display element,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a gate of the third transistor,
wherein the other of the source electrode and the drain electrode of the third transistor is electrically connected to a second electrode of the second display element, and
wherein the sixth wiring is not electrically connected to the first transistor.
2. The semiconductor device according to claim 1 , wherein the first display element has a region overlapping with the second display element.
3. The semiconductor device according to claim 1 , further comprising a functional layer between the first display element and the second display element, the functional layer comprising a first contact electrically connected to the first display element and a second contact electrically connected to the second display element.
4. The semiconductor device according to claim 1 , further comprising an opening, the opening overlapping with the second display element.
5. The semiconductor device according to claim 1 ,
wherein one of the first to third transistors includes an oxide semiconductor.
6. A semiconductor device comprising a pixel, the pixel comprising:
a first transistor;
a first display element;
a second transistor;
a second display element;
a third transistor;
a first wiring electrically connected to one of a source electrode and a drain electrode of the first transistor and one of a source electrode and a drain electrode of the second transistor;
a second wiring electrically connected to a gate of the first transistor;
a third wiring electrically connected to a gate of the second transistor;
a fourth wiring electrically connected to one of a source electrode and a drain electrode of the third transistor;
a fifth wiring electrically connected to a first electrode of the first display element;
a sixth wiring electrically connected to a first electrode of the second display element; and
a seventh wiring electrically connected to the other of the source electrode and the drain electrode of the first transistor,
wherein the other of the source electrode and the drain electrode of the first transistor is directly connected to a second electrode of the first display element,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a gate of the third transistor,
wherein the other of the source electrode and the drain electrode of the third transistor is electrically connected to a second electrode of the second display element,
wherein the first display element is a liquid-crystal element,
wherein the second display element is a light-emitting element, and
wherein the seventh wiring is not electrically connected to the sixth wiring.
7. The semiconductor device according to claim 6 , wherein the first display element has a region overlapping with the second display element.
8. The semiconductor device according to claim 6 , further comprising a functional layer between the first display element and the second display element, the functional layer comprising a first contact electrically connected to the first display element and a second contact electrically connected to the second display element.
9. The semiconductor device according to claim 6 , further comprising an opening, the opening overlapping with the second display element.
10. The semiconductor device according to claim 6 ,
wherein one of the first to third transistors includes an oxide semiconductor.
11. A semiconductor device comprising a pixel, the pixel comprising:
a first transistor;
a first display element;
a first capacitor;
a second transistor;
a second display element;
a second capacitor;
a third transistor;
a first wiring electrically connected to one of a source electrode and a drain electrode of the first transistor and one of a source electrode and a drain electrode of the second transistor;
a second wiring electrically connected to a gate of the first transistor;
a third wiring electrically connected to a gate of the second transistor;
a fourth wiring electrically connected to one of a source electrode and a drain electrode of the third transistor;
a fifth wiring electrically connected to a first electrode of the first display element; and
a sixth wiring electrically connected to a first electrode of the second display element,
wherein the other of the source electrode and the drain electrode of the first transistor is directly connected to a second electrode of the first display element,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a gate of the third transistor,
wherein the other of the source electrode and the drain electrode of the third transistor is electrically connected to a second electrode of the second display element, and
wherein the first electrode of the second display element is not electrically connected to the second electrode of the first display element.
12. The semiconductor device according to claim 11 ,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first electrode of the first capacitor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a first electrode of the second capacitor,
wherein the first electrode of the first display element is electrically connected to a second electrode of the first capacitor,
wherein the second electrode of the second display element is electrically connected to a second electrode of the second capacitor, and
wherein the one of the source electrode and the drain electrode of the third transistor is not connected to the second electrode of the second capacitor.
13. The semiconductor device according to claim 11 , wherein the first display element has a region overlapping with the second display element.
14. The semiconductor device according to claim 11 , further comprising a functional layer between the first display element and the second display element, the functional layer comprising a first contact electrically connected to the first display element and a second contact electrically connected to the second display element.
15. The semiconductor device according to claim 11 , further comprising an opening, the opening overlapping with the second display element.
16. The semiconductor device according to claim 11 ,
wherein one of the first to third transistors includes an oxide semiconductor.