Magnetic storage device
A magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided. The first layer includes a rare-earth element and the first layer has a region including boron (B) at a proportion higher than a proportion of boron (B) in the first ferromagnetic layer.
1. A magnetic storage device comprising:
a magnetoresistive effect element;
the magnetoresistive effect element including:
a first ferromagnetic layer;
a second ferromagnetic layer;
a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and
a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided,
wherein:
the first layer includes a rare-earth element; and
the first layer has a region including boron (B) at a proportion higher than a proportion of boron (B) in the first ferromagnetic layer.
2. The device of claim 1 , further comprising:
a second layer provided at a side of the first layer opposite to a side of the first layer at which the first ferromagnetic layer is provided.
3. The device of claim 2 , wherein:
the second layer includes one of ruthenium (Ru) and molybdenum (Mo).
4. The device of claim 1 , wherein:
the first layer includes oxygen (O).
5. The device of claim 1 , wherein:
the non-magnetic layer has a region including oxygen (O) at a proportion higher than a proportion of oxygen (O) in the first layer.
6. The device of claim 2 , wherein:
the second layer includes one of iridium (Ir) and platinum (Pt).
7. The device of claim 2 , wherein:
the second layer includes at least one element selected from boron (B), silicon (Si), and carbon (C).
8. The device of claim 2 , wherein:
the second layer has an amorphous structure.
9. The device of claim 2 , wherein:
the second layer is in contact with the first layer.
10. The device of claim 1 , wherein:
the first layer further includes iron (Fe).
11. A magnetic storage device comprising:
a magnetoresistive effect element;
the magnetoresistive effect element including:
a first ferromagnetic layer;
a second ferromagnetic layer;
a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and
a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided,
wherein:
the first layer includes a rare-earth element;
the first layer has a region in which a first strength corresponding to boron (B) is higher than a second strength corresponding to boron (B) in the first ferromagnetic layer; and
the first strength and the second strength are determined based on electron energy loss spectroscopy (EELS).
12. The device of claim 11 , further comprising:
a second layer provided at a side of the first layer opposite to a side of the first layer at which the first ferromagnetic layer is provided.
13. The device of claim 12 , wherein:
the second layer includes one of ruthenium (Ru) and molybdenum (Mo).
14. The device of claim 11 , wherein:
the first layer includes oxygen (O).
15. The device of claim 11 , wherein:
the non-magnetic layer has a region in which a third strength corresponding to oxygen (O) is higher than a fourth strength corresponding to oxygen (O) in the first layer; and
the third strength and the fourth strength are determined based on the EELS.
16. The device of claim 12 , wherein:
the second layer includes one of iridium (Ir) and platinum (Pt).
17. The device of claim 12 , wherein:
the second layer includes at least one element selected from boron (B), silicon (Si), and carbon (C).
18. The device of claim 12 , wherein:
the second layer has an amorphous structure.
19. The device of claim 12 , wherein:
the second layer is in contact with the first layer.
20. The device of claim 11 , wherein:
the first layer further includes iron (Fe).