Semiconductor device, inverter circuit, drive, vehicle, and elevator
A semiconductor device according to embodiments includes a gate electrode; a gate insulating layer; and a silicon carbide layer having a first plane and a second plane facing the first plane, the silicon carbide layer including a first silicon carbide region of p-type and a second silicon carbide region positioned between the first silicon carbide region and the gate insulating layer, and the second silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating layer; and
a silicon carbide layer having a first plane and a second plane facing the first plane, the silicon carbide layer including
a first silicon carbide region of p-type and
a second silicon carbide region positioned between the first silicon carbide region and the gate insulating layer, and the second silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
2. The semiconductor device according to claim 1 ,
wherein oxygen concentration in the second silicon carbide region is 1×10 17 cm −3 or more and 1×10 23 cm −3 or less.
3. The semiconductor device according to claim 1 ,
wherein oxygen concentration in the second silicon carbide region is 3×10 19 cm −3 or more.
4. The semiconductor device according to claim 1 ,
wherein density of the at least one oxygen atom bonded to four silicon atoms in the second silicon carbide region is higher than density of at least one oxygen atom bonded to two silicon atoms in the second silicon carbide region.
5. The semiconductor device according to claim 1 ,
wherein density of the at least one oxygen atom bonded to four silicon atoms in the second silicon carbide region is higher than density of at least one oxygen atom bonded to a carbon atom in the second silicon carbide region.
6. The semiconductor device according to claim 1 ,
wherein oxygen concentration at a first position is less than 1×10 17 cm −3 , the first position is 20 nm away from an interface between the gate insulating layer and the silicon carbide layer toward the silicon carbide layer.
7. The semiconductor device according to claim 1 ,
wherein the second silicon carbide region is p-type.
8. The semiconductor device according to claim 1 ,
wherein the second silicon carbide region includes aluminum, and oxygen concentration in the second silicon carbide region is higher than aluminum concentration in the second silicon carbide region.
9. The semiconductor device according to claim 1 ,
wherein the silicon carbide layer and the gate insulating layer include at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), scandium (Sc), yttrium (Y), and lanthanoids (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), a distance from a second position to an interface between the gate insulating layer and the silicon carbide layer is 5 nm or less, and concentration of the at least one element is maximized in the second position.
10. The semiconductor device according to claim 9 ,
wherein concentration of the at least one element in the second position is 4×10 19 cm −3 or more.
11. The semiconductor device according to claim 1 ,
wherein the silicon carbide layer further including
a third silicon carbide region of n-type positioned between the second plane and the first silicon carbide region,
a fourth silicon carbide region of n-type positioned between the first silicon carbide region and the first plane and having n-type impurity concentration higher than n-type impurity concentration in the third silicon carbide region, and
a fifth silicon carbide region positioned between the third silicon carbide region and the gate insulating layer, and the fifth silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
12. The semiconductor device according to claim 11 ,
wherein the fifth silicon carbide region is n-type.
13. The semiconductor device according to claim 11 ,
wherein the silicon carbide layer further including a sixth silicon carbide region positioned between the fourth silicon carbide region and the gate insulating layer, and the sixth silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
14. The semiconductor device according to claim 13 ,
wherein the sixth silicon carbide region is n-type.
15. A semiconductor device comprising:
a gate electrode;
a gate insulating layer; and
a silicon carbide layer having a first plane and a second plane facing the first plane, the silicon carbide layer including
a first silicon carbide region of n-type and
a second silicon carbide region positioned between the first silicon carbide region and the gate insulating layer, and the second silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
16. The semiconductor device according to claim 15 ,
wherein the silicon carbide layer further including a trench disposed on a side of the first plane, the trench having a first side face, a second side face, and a bottom face between the first side face and the second side face, and
the second silicon carbide region is positioned between the first silicon carbide region and the bottom face.
17. An inverter circuit comprising the semiconductor device according to claim 1 .
18. A drive comprising the semiconductor device according to claim 1 .
19. A vehicle comprising the semiconductor device according to claim 1 .
20. An elevator comprising the semiconductor device according to claim 1 .