Acoustic wave device, radio-frequency front end circuit, and communication device
An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (φ LT =0°±5°, θ LT , ψ LT =0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency f h1_t (n) satisfies Formula (3) or Formula (4) for all m where m>n: f h1_t (n) >f u (m) Formula (3); and f h1_t (n) <f l (m) Formula (4). In Formulas (3) and (4), f u (m) and f l (m) represent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m band pass filters.
1. An acoustic wave device comprising:
N band pass filters including first ends connected so as to define a common connection and having different pass bands from each other, where N is an integer greater than or equal to 2; wherein
when the N band pass filters are referred to as a band pass filter ( 1 ), a band pass filter ( 2 ), . . . and a band pass filter (N) in ascending order of pass band frequency, at least one band pass filter (n) (1≤n<N), other than a band pass filter having a highest pass band frequency, among the N band pass filters is an acoustic wave filter that includes one or more acoustic wave resonators;
at least one acoustic wave resonator (t) among the one or more acoustic wave resonators includes:
a silicon support substrate having Euler angles (φ Si , θ Si , ψ Si );
a silicon oxide film stacked above the silicon support substrate;
a lithium tantalate film stacked above the silicon oxide film and having Euler angles (φ LT =0°±5°, θ LT , ψ LT =0°±15°);
an IDT electrode provided above the lithium tantalate film and including electrode fingers; and
a protective film covering at least a portion of the IDT electrode; and
in the at least one acoustic wave resonator (t), when λ is a wavelength determined by an electrode finger pitch of the IDT electrode and a thickness normalized using the wavelength λ is referred to as a wavelength-normalized thickness, and when T LT is a wavelength-normalized thickness of the lithium tantalate film, θ LT is a Euler angle of the lithium tantalate film, T S is a wavelength-normalized thickness of the silicon oxide film, T E is a wavelength-normalized thickness of the IDT electrode converted into a thickness of aluminum obtained as a product of a wavelength-normalized thickness of the IDT electrode and a value obtained by dividing a density of the IDT electrode by a density of aluminum, T P is a wavelength-normalized thickness of the protective film obtained as a product of a value obtained by dividing a density of the protective film by a density of silicon oxide and a wavelength-normalized thickness obtained by normalizing a thickness of the protective film using the wavelength λ, ψ Si is a propagation direction inside the silicon support substrate, and T Si is a wavelength-normalized thickness of the silicon support substrate, a first frequency f h1_t (n) , where s=1 among first, second, and third frequencies f hs_t (n) determined by Formula (1) and Formula (2) determined using T LT , θ LT , T S , T E , T P , ψ Si , and T Si and all band pass filters (m) (n<m≤N) having pass bands located at a higher frequency than the pass band of the band pass filter (n) satisfy Formula (3) or Formula (4):
V
h
=
(
a
T
LT
(
3
)
(
(
T
LT
-
c
T
LT
)
3
-
b
T
LT
(
3
)
)
+
a
T
LT
(
2
)
(
(
T
LT
-
c
T
LT
)
2
-
b
T
LT
(
2
)
)
+
a
T
LT
(
1
)
(
T
LT
-
c
T
LT
)
+
a
T
S
(
2
)
(
(
T
S
-
c
T
S
)
2
-
b
T
S
(
2
)
)
+
a
T
S
(
1
)
(
T
S
-
c
T
S
)
+
a
T
E
(
1
)
(
T
E
-
c
T
E
)
+
a
ψ
Si
(
5
)
(
(
ψ
Si
-
c
ψ
Si
)
5
-
b
ψ
Si
(
5
)
)
+
a
ψ
Si
(
4
)
(
(
ψ
Si
-
c
ψ
Si
)
4
-
b
ψ
Si
(
4
)
)
+
a
ψ
Si
(
3
)
(
(
ψ
Si
-
c
ψ
Si
)
3
-
b
ψ
Si
(
3
)
)
+
a
ψ
Si
(
2
)
(
(
ψ
Si
-
c
ψ
Si
)
2
-
b
ψ
Si
(
2
)
)
+
a
ψ
si
(
1
)
(
ψ
Si
-
c
ψ
Si
)
+
a
θ
LT
(
2
)
(
(
θ
LT
-
c
θ
LT
)
2
-
b
θ
LT
(
2
)
)
+
a
θ
LT
(
1
)
(
θ
LT
-
c
θ
LT
)
+
d
T
LT
T
S
(
T
LT
-
c
T
LT
)
(
T
S
-
c
T
S
)
+
d
T
LT
T
E
(
T
LT
-
c
T
LT
)
(
T
E
-
c
T
E
)
+
d
T
LT
ψ
Si
(
T
LT
-
c
T
LT
)
(
ψ
Si
-
c
ψ
Si
)
+
e
)
(
a
T
P
T
P
3
+
b
T
P
T
P
2
+
c
T
P
T
P
2
+
d
T
P
)
;
Formula
(
1
)
f
h
s
_
t
(
n
)
=
V
h
s
_
t
λ
t
(
n
)
;
Formula
(
2
)
f
hs
_
t
(
n
)
>
f
u
(
m
)
;
Formula
(
3
)
f
hs
_
t
(
n
)
<
f
l
(
m
)
;
Formula
(
4
)
where s=1 in Formulas (2) to (4);
λ t (n) is a wavelength determined by an electrode finger pitch of the IDT electrode of the at least one acoustic wave resonator (t) included in the band pass filter (n);
f u (m) is a frequency of a high-frequency end of the pass band of the band pass filter (m);
f l (m) is a frequency of a low-frequency end of the pass band of the band pass filter (m); and
coefficients in Formula (1) have values as listed in Table 1 for various crystal orientations of the silicon support substrate:
TABLE 1
s = 1
Si(100)
Si(110)
Si(111)
a TLT (3)
0
0
0
a TLT (2)
0
0
0
a TLT (1)
−436.3811104
0
0
b TLT (3)
0
0
0
b TLT (2)
0
0
0
c TLT
0.251271186
0
0
a TS (2)
0
0
0
a TS (1)
−370.8189665
0
−174.7116877
b TS (2)
0
0
0
c TS
0.250529661
0
0.24371308
a TE (1)
0
0
0
c TE
0
0
0
a ψSi (5)
0
−6.73542E−06
0
a ψSi (4)
0
−4.84328E−05
0.000703463
a ψSi (3)
0.044803063
0.020121569
−4.77016E−05
a ψSi (2)
−0.11149637
0.237494527
−0.961938987
a ψSi (1)
−43.37701861
−1.22341255
0.091605753
b ψSi (5)
0
−78830.27657
0
b ψSi (4)
0
1406271.562
340944.6167
b ψSi (3)
51.32996847
−17.77613547
−41.61537323
b ψSi (2)
280.2660593
895.2921635
446.7591732
c ψSi
22.32521186
45.02689779
30.11392405
a θLT (2)
0
0
0
a θLT (1)
0
0
0
b θLT (2)
0
0
0
c θLT
−90
−90
−90
d TLTTS
0
0
0
d TLTTE
0
0
0
d TLT ψSi
0
0
0
e
5141.869703
5073.066348
4781.489451
a TP
0
0
0
b TP
0.02
0.02
0.02
c TP
−0.0102
−0.0102
−0.0102
d TP
1.0002
1.0002
1.0002.
2. The acoustic wave device according to claim 1 , wherein the values of T LT , θ LT , T S , T N , T E , T P , ψ Si , and T Si are selected so that the second frequency f h2_t (n) satisfies Formula (3) or Formula (4).
3. The acoustic wave device according to claim 1 , wherein the values of T LT , θ LT , T S , T N , T E , T P , ψ Si , and T Si are selected so that the third frequency f h3_t (n) satisfies Formula (3) or Formula (4).
4. The acoustic wave device according to claim 1 , wherein the values of T LT , θ LT , T S , T N , T E , T P , ψ Si , and T Si are selected so that the second and third frequencies f h2_t (n) and f h3_t (n) satisfy Formula (3) or Formula (4).
5. The acoustic wave device according to claim 1 , wherein a film thickness of the silicon oxide film is less than or equal to about 2λ.
6. The acoustic wave device according to claim 1 , wherein the wavelength-normalized thickness T Si of the silicon support substrate is >about 4.
7. The acoustic wave device according to claim 6 , wherein T Si >about 10.
8. The acoustic wave device according to claim 1 , wherein the wavelength-normalized thickness of the lithium tantalate film is less than or equal to about 3.5.
9. The acoustic wave device according to claim 8 , wherein the wavelength-normalized thickness of the lithium tantalate film is less than or equal to about 2.5.
10. The acoustic wave device according to claim 8 , wherein the wavelength-normalized thickness of the lithium tantalate film is less than or equal to about 1.5.
11. The acoustic wave device according to claim 8 , wherein the wavelength-normalized thickness of the lithium tantalate film is less than or equal to about 0.5.
12. The acoustic wave device according to claim 1 , wherein
the protective film covers the lithium tantalate film and side surfaces and upper surfaces of the electrode fingers of the IDT electrode; and
a thickness of portions of the protective film on the side surfaces of the electrode fingers is smaller than a thickness of portions of the protective film that cover the upper surfaces of the electrode fingers.
13. The acoustic wave device according to claim 1 , wherein
the protective film covers the lithium tantalate film and side surfaces and upper surfaces of the electrode fingers of the IDT electrode; and
a thickness of portions of the protective film on the lithium tantalate film is smaller than a thickness of portions of the protective film that cover the upper surfaces of the electrode fingers.
14. The acoustic wave device according to claim 1 , wherein
the protective film covers the lithium tantalate film and upper surfaces and side surfaces of the IDT electrode; and
a thickness of portions of the protective film on the lithium tantalate film is larger than a thickness of portions of the protective film that cover the upper surfaces of the electrode fingers.
15. The acoustic wave device according to claim 1 , further comprising:
an antenna terminal to which first ends of the plurality of band pass filters are connected so as to define the common connection; wherein
an acoustic wave resonator of the one or more acoustic wave resonators that is nearest the antenna terminal satisfies Formula (3) or Formula (4).
16. The acoustic wave device according to claim 1 , wherein all of the one or more acoustic wave resonators satisfy Formula (3) or Formula (4).
17. The acoustic wave device according to claim 1 , wherein the acoustic wave device is a duplexer.
18. The acoustic wave device according to claim 1 , wherein the acoustic wave device is a composite filter that further comprises an antenna terminal to which first ends of the plurality of band pass filters are commonly connected and three or more of the band pass filters connected at a side near the antenna terminal so as to define the common connection.
19. The acoustic wave device according to claim 1 , wherein the acoustic wave filter including the one or more acoustic wave resonators is a ladder filter that includes a plurality of series arm resonators and a plurality of parallel arm resonators.
20. An acoustic wave device comprising:
N band pass filters including first ends connected so as to define a common connection and having different pass bands from each other, where N is an integer greater than or equal to 2; wherein
when the N band pass filters are referred to as a band pass filter ( 1 ), a band pass filter ( 2 ), . . . and a band pass filter (N) in ascending order of pass band frequency, at least one band pass filter (n) (1≤n<N), other than the band pass filter having a highest pass band frequency, among the N band pass filters is an acoustic wave filter that includes one or more acoustic wave resonators;
at least one acoustic wave resonator (t) among the one or more acoustic wave resonators includes:
a silicon support substrate having Euler angles (φ Si , θ Si , ψ Si );
a silicon oxide film stacked above the silicon support substrate;
a lithium tantalate film stacked above the silicon oxide film and having Euler angles (θ LT =0°±5°, θ LT , ψ LT =0°±15°);
an IDT electrode provided above the lithium tantalate film and including electrode fingers; and
a protective film covering at least a portion of the IDT electrode; and
in the at least one acoustic wave resonator (t), when λ is a wavelength determined by an electrode finger pitch of the IDT electrode and a thickness normalized using the wavelength λ is referred to as a wavelength-normalized thickness, and when T LT is a wavelength-normalized thickness of the lithium tantalate film, θ LT is a Euler angle of the lithium tantalate film, T S is a wavelength-normalized thickness of the silicon oxide film, T E is a wavelength-normalized thickness of the IDT electrode converted into a thickness of aluminum obtained as a product of a wavelength-normalized thickness of the IDT electrode and a value obtained by dividing a density of the IDT electrode by a density of aluminum, T P is a wavelength-normalized thickness of the protective film obtained as a product of a value obtained by dividing a density of the protective film by a density of silicon oxide and a wavelength-normalized thickness obtained by normalizing a thickness of the protective film using the wavelength λ, ψ Si is a propagation direction inside the silicon support substrate, and T Si is a wavelength-normalized thickness of the silicon support substrate, a second frequency f h2_t (n) , where s=2 among first, second, and third frequencies f hs_t (n) determined by Formula (1) and Formula (2) determined using T LT , θ LT , T S , T E , T P , ψ Si , and T Si and all band pass filters (m) (n<m≤N) having pass bands located at a higher frequency than the pass band of the band pass filter (n) satisfy Formula (3) or Formula (4):
V
h
=
(
a
T
LT
(
3
)
(
(
T
LT
-
c
T
LT
)
3
-
b
T
LT
(
3
)
)
+
a
T
LT
(
2
)
(
(
T
LT
-
c
T
LT
)
2
-
b
T
LT
(
2
)
)
+
a
T
LT
(
1
)
(
T
LT
-
c
T
LT
)
+
a
T
S
(
2
)
(
(
T
S
-
c
T
S
)
2
-
b
T
S
(
2
)
)
+
a
T
S
(
1
)
(
T
S
-
c
T
S
)
+
a
T
E
(
1
)
(
T
E
-
c
T
E
)
+
a
ψ
Si
(
5
)
(
(
ψ
Si
-
c
ψ
Si
)
5
-
b
ψ
Si
(
5
)
)
+
a
ψ
Si
(
4
)
(
(
ψ
Si
-
c
ψ
Si
)
4
-
b
ψ
Si
(
4
)
)
+
a
ψ
Si
(
3
)
(
(
ψ
Si
-
c
ψ
Si
)
3
-
b
ψ
Si
(
3
)
)
+
a
ψ
Si
(
2
)
(
(
ψ
Si
-
c
ψ
Si
)
2
-
b
ψ
Si
(
2
)
)
+
a
ψ
si
(
1
)
(
ψ
Si
-
c
ψ
Si
)
+
a
θ
LT
(
2
)
(
(
θ
LT
-
c
θ
LT
)
2
-
b
θ
LT
(
2
)
)
+
a
θ
LT
(
1
)
(
θ
LT
-
c
θ
LT
)
+
d
T
LT
T
S
(
T
LT
-
c
T
LT
)
(
T
S
-
c
T
S
)
+
d
T
LT
T
E
(
T
LT
-
c
T
LT
)
(
T
E
-
c
T
E
)
+
d
T
LT
ψ
Si
(
T
LT
-
c
T
LT
)
(
ψ
Si
-
c
ψ
Si
)
+
e
)
(
a
T
P
T
P
3
+
b
T
P
T
P
2
+
c
T
P
T
P
2
+
d
T
P
)
;
Formula
(
1
)
f
h
s
_
t
(
n
)
=
V
h
s
_
t
λ
t
(
n
)
;
Formula
(
2
)
f
hs
_
t
(
n
)
>
f
u
(
m
)
;
Formula
(
3
)
f
hs
_
t
(
n
)
<
f
l
(
m
)
;
Formula
(
4
)
where s=2 in Formulas (2) to (4);
λ t (n) is a wavelength determined by an electrode finger pitch of the IDT electrode of the at least one acoustic wave resonator (t) included in the band pass filter (n);
f u (m) is a frequency of a high-frequency end of the pass band of the band pass filter (m);
f l (m) is a frequency of a low-frequency end of the pass band of the band pass filter (m); and
coefficients in Formula (1) have values as listed in Table 2 for various crystal orientations of the silicon support substrate:
TABLE 2
s = 2
Si(100)
Si(110)
Si(111)
a TLT (3)
0
0
0
a TLT (2)
−3168.980655
−3017.48047
−6490.588929
a TLT (1)
−1070.770975
−1740.800945
−1736.124534
b TLT (3)
0
0
0
b TLT (2)
0.012520877
0.011673567
0.012932291
c TLT
0.25
0.26454918
0.244042365
a TS (2)
0
0
−5447.157686
a TS (1)
−1175.713239
−1443.794269
−1260.230106
b TS (2)
0
0
0.012411464
c TS
0.250104384
0.264754098
0.243336275
a TE (1)
−440.9839549
−631.5739347
−613.3480905
c TE
0.249686848
0.254030055
0.249646955
a ψSi (5)
0
0
0
a ψSi (4)
0
−8.39122E−05
0
a ψSi (3)
−0.01385161
−0.000219614
0
a ψSi (2)
0.040113138
0.288564318
0.113517332
a ψSi (1)
10.06827612
−1.021332326
0.01604077
b ψSi (5)
0
0
0
b ψSi (4)
0
1489555.068
0
b ψSi (3)
−14.09179662
−1671.679914
0
b ψSi (2)
281.2490194
936.1444126
446.7377612
c ψSi
22.53131524
46.09631148
29.70873786
a θLT (2)
0
0
0
a θLT (1)
−2.926997787
0
0
b θLT (2)
0
0
0
c θLT
−50.02087683
−90
−90
d TLTTS
0
0
0
d TLTTE
−2151.133017
−2785.629029
−2639.620065
d TLT ψSi
17.13925013
0
0
e
5188.573706
5052.799929
5187.888817
a TP
0
0
0
b TP
−0.1336
−0.1336
−0.1336
c TP
−0.0552
−0.0552
−0.0552
d TP
1.001
1.001
1.001.
21. The acoustic wave device according to claim 20 , wherein the values of T LT , θ LT , T S , T N , T E , T P , ψ Si , and T Si are selected so that the third frequency f h3_t (n) satisfies Formula (3) or Formula (4).
22. An acoustic wave device comprising:
N band pass filters having first ends connected so as to define a common connection and having different pass bands from each other, where N is an integer greater than or equal to 2; wherein
when the N band pass filters are referred to as a band pass filter ( 1 ), a band pass filter ( 2 ), . . . and a band pass filter (N) in ascending order of pass band frequency, at least one band pass filter (n) (1≤n<N), other than the band pass filter having a highest pass band frequency, among the N band pass filters is an acoustic wave filter that includes one or more acoustic wave resonators;
at least one acoustic wave resonator (t) among the one or more acoustic wave resonators includes:
a silicon support substrate having Euler angles (φ Si , θ Si , ψ Si );
a silicon oxide film stacked above the silicon support substrate;
a lithium tantalate film stacked above the silicon oxide film and having Euler angles (φ LT =0°±5°, θ LT , ψ LT =0°±15°);
an IDT electrode provided above the lithium tantalate film and including electrode fingers; and
a protective film that covers at least part of the IDT electrode; and
in the at least one acoustic wave resonator (t), when λ is a wavelength determined by an electrode finger pitch of the IDT electrode and a thickness normalized using the wavelength θ LT is referred to as a wavelength-normalized thickness, and when T LT is a wavelength-normalized thickness of the lithium tantalate film, θ LT is a Euler angle of the lithium tantalate film, T S is a wavelength-normalized thickness of the silicon oxide film, T E is a wavelength-normalized thickness of the IDT electrode converted into a thickness of aluminum obtained as a product of a wavelength-normalized thickness of the IDT electrode and a value obtained by dividing a density of the IDT electrode by a density of aluminum, T P is a wavelength-normalized thickness of the protective film obtained as a product of a value obtained by dividing a density of the protective film by a density of silicon oxide and a wavelength-normalized thickness obtained by normalizing a thickness of the protective film using the wavelength θ LT , ψ Si is a propagation direction inside the silicon support substrate, and T Si is a wavelength-normalized thickness of the silicon support substrate, a third frequency f h3_t (n) , where s=3 among first, second, and third frequencies f hs_t (n) determined by Formula (1) and Formula (2) determined using T LT , θ LT , T S , T E , T P , ψ Si , and T Si and all band pass filters (m) (n<m≤N) having pass bands located at a higher frequency than the pass band of the band pass filter (n) satisfy Formula (3) or Formula (4):
V
h
=
(
a
T
LT
(
3
)
(
(
T
LT
-
c
T
LT
)
3
-
b
T
LT
(
3
)
)
+
a
T
LT
(
2
)
(
(
T
LT
-
c
T
LT
)
2
-
b
T
LT
(
2
)
)
+
a
T
LT
(
1
)
(
T
LT
-
c
T
LT
)
+
a
T
S
(
2
)
(
(
T
S
-
c
T
S
)
2
-
b
T
S
(
2
)
)
+
a
T
S
(
1
)
(
T
S
-
c
T
S
)
+
a
T
E
(
1
)
(
T
E
-
c
T
E
)
+
a
ψ
Si
(
5
)
(
(
ψ
Si
-
c
ψ
Si
)
5
-
b
ψ
Si
(
5
)
)
+
a
ψ
Si
(
4
)
(
(
ψ
Si
-
c
ψ
Si
)
4
-
b
ψ
Si
(
4
)
)
+
a
ψ
Si
(
3
)
(
(
ψ
Si
-
c
ψ
Si
)
3
-
b
ψ
Si
(
3
)
)
+
a
ψ
Si
(
2
)
(
(
ψ
Si
-
c
ψ
Si
)
2
-
b
ψ
Si
(
2
)
)
+
a
ψ
si
(
1
)
(
ψ
Si
-
c
ψ
Si
)
+
a
θ
LT
(
2
)
(
(
θ
LT
-
c
θ
LT
)
2
-
b
θ
LT
(
2
)
)
+
a
θ
LT
(
1
)
(
θ
LT
-
c
θ
LT
)
+
d
T
LT
T
S
(
T
LT
-
c
T
LT
)
(
T
S
-
c
T
S
)
+
d
T
LT
T
E
(
T
LT
-
c
T
LT
)
(
T
E
-
c
T
E
)
+
d
T
LT
ψ
Si
(
T
LT
-
c
T
LT
)
(
ψ
Si
-
c
ψ
Si
)
+
e
)
(
a
T
P
T
P
3
+
b
T
P
T
P
2
+
c
T
P
T
P
2
+
d
T
P
)
;
Formula
(
1
)
f
h
s
_
t
(
n
)
=
V
h
s
_
t
λ
t
(
n
)
;
Formula
(
2
)
f
hs
_
t
(
n
)
>
f
u
(
m
)
;
Formula
(
3
)
f
hs
_
t
(
n
)
<
f
l
(
m
)
;
Formula
(
4
)
and
where s=3 in Formulas (2) to (4);
λ t (n) is a wavelength determined by an electrode finger pitch of the IDT electrode of the at least one acoustic wave resonator (t) included in the band pass filter (n);
f u (m) is a frequency of a high-frequency end of the pass band of the band pass filter (m);
f l (m) is a frequency of a low-frequency end of the pass band of the band pass filter (m); and
coefficients in Formula (1) have values as listed in Table 3 for various crystal orientations of the silicon support substrate:
TABLE 3
s = 3
Si(100)
Si(110)
Si(111)
a TLT (3)
24973.69604
0
0
a TLT (2)
1430.312613
0
−6156.310187
a TLT (1)
−1027.290569
−737.4915071
−1476.525631
b TLT (3)
−0.000364885
0
0
b TLT (2)
0.011041041
0
0.009760415
c TLT
0.277376171
0.283128295
0.290986602
a TS (2)
0
0
0
a TS (1)
−617.9601012
0
0
b TS (2)
0
0
0
c TS
0.273226238
0
0
a TE (1)
−254.0645301
−400.406917
−524.8090015
c TE
0.262449799
0.265026362
0.25499391
a ψSi (5)
0
0
0
a ψSi (4)
0
−0.000208283
−0.000637441
a ψSi (3)
0
−0.004709453
−0.001817349
a ψSi (2)
−0.126294383
0.574442977
0.749991624
a ψSi (1)
2.746835794
7.891650217
−0.116425099
b ψSi (5)
0
0
0
b ψSi (4)
0
1654327.754
303345.3736
b ψSi (3)
0
−7229.860818
−201.8986483
b ψSi (2)
266.9400494
985.3381236
411.1815157
c ψSi
22.10843373
47.8602812
30.42021924
a θLT (2)
0
0
0.593925697
a θLT (1)
0
0
−2.75182308
b θLT (2)
0
0
67.60597649
c θLT
−90
−90
−49.6589525
d TLTTS
−2391.060714
0
0
d TLTTE
0
0
−2773.934251
d TLT ψSi
−12.5134053
15.88855602
0
e
5661.675305
5417.174527
5440.57579
a TP
10.443
10.443
10.443
b TP
−0.0316
−0.0316
−0.0316
c TP
−0.0653
−0.0653
−0.0653
d TP
1.0011
1.0011
1.0011.