Terahertz wave generating apparatus using dual mode laser
Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.
1. A terahertz wave generating apparatus comprising:
a dual mode laser including a first single mode laser configured to generate a first beating signal, a gain adjustment region configured to modulate the first beating signal, and a second single mode laser configured to generate a second beating signal; and
a photomixer configured to mix the modulated first beating signal and the second beating signal, and to modulate a current supplied based on a beating frequency of the mixed first beating signal and second beating signal to generate a terahertz wave signal, and
wherein the gain adjustment region is formed between the first single mode laser and the second single mode laser, and
wherein the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.
2. The terahertz wave generating apparatus of claim 1 , wherein the first single mode laser includes a first diffraction grating, a first gain layer, and a first electrode plate,
wherein the gain adjustment region includes an absorption layer and a second electrode plate, and
wherein the second single mode laser includes a second diffraction grating, a second gain layer, and a third electrode plate.
3. The terahertz wave generating apparatus of claim 2 , wherein a diffraction period of the first diffraction grating is different from a diffraction period of the second diffraction grating.
4. The terahertz wave generating apparatus of claim 2 , wherein the first gain layer, the absorption layer, and the second gain layer are formed of a same material.
5. The terahertz wave generating apparatus of claim 1 , wherein the first single mode laser, the gain adjustment region, and the second single mode laser are formed on a same substrate.
6. The terahertz wave generating apparatus of claim 5 , wherein the substrate is one of a gallium arsenide (GaAs) substrate, an indium phosphide (InP) substrate, and a gallium nitride (GaN) substrate.
7. The terahertz wave generating apparatus of claim 1 , wherein at least one of the first single mode laser and the second single mode laser is a wavelength tunable single mode laser.
8. The terahertz wave generating apparatus of claim 1 , wherein the first single mode laser and the second single mode laser are one of a distributed feedback laser diode (DFB LD), a distributed Bragg reflector laser diode (DBR LD), and a sampled grating distributed Bragg reflector laser diode (SGDBR LD).
9. The terahertz wave generating apparatus of claim 1 , wherein the photomixer includes a coupler and a photo-electric converter.
10. The terahertz wave generating apparatus of claim 1 , wherein the photomixer is one of a unitravelling carrier photodiode (UTC-PD), an evanescent photodiode (EC-PD), and a low temperature grown photomixer (LTG Photomixer).
11. A terahertz wave generating apparatus comprising:
a dual mode laser including a first single mode laser configured to generate a first beating signal, a gain adjustment region configured to modulate the first beating signal, and a second single mode laser configured to generate a second beating signal;
a semiconductor optical amplifier configured to amplify the modulated first beating signal and the second beating signal; and
a photomixer configured to mix the modulated first beating signal and the second beating signal which are amplified from the semiconductor optical amplifier, and to modulate a current supplied based on a beating frequency of the mixed first beating signal and second beating signal to generate a terahertz wave signal, and
wherein the gain adjustment region is formed between the first single mode laser and the second single mode laser, and
wherein the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.
12. The terahertz wave generating apparatus of claim 11 , wherein the first single mode laser includes a first diffraction grating, a first gain layer, and a first electrode plate,
wherein the gain adjustment region includes an absorption layer and a second electrode plate, and
wherein the second single mode laser includes a second diffraction grating, a second gain layer, and a third electrode plate.
13. The terahertz wave generating apparatus of claim 12 , wherein a diffraction period of the first diffraction grating is different from a diffraction period of the second diffraction grating.
14. The terahertz wave generating apparatus of claim 12 , wherein the first gain layer, the absorption layer, and the second gain layer are formed of a same material.
15. The terahertz wave generating apparatus of claim 11 , wherein the first single mode laser, the gain adjustment region, and the second single mode laser are formed on a same substrate.
16. The terahertz wave generating apparatus of claim 11 , wherein at least one of the first single mode laser and the second single mode laser is a wavelength tunable single mode laser.