Semiconductor device
A semiconductor device includes a semiconductor layer having a first surface in which a plurality of trenches each extending along a first direction are arranged along a second direction perpendicular to the first direction, a first electrode on a second surface of the semiconductor layer, a second electrode on the first surface of the semiconductor layer, and a control electrode inside at least one of the trenches. The plurality of trenches includes first, second, and third trenches. The first and second trenches are connected to each other via a first connector at an end in the first direction of each of the first and second trenches. The third trench extends beyond the end of each of the first and second trenches along the first direction.
1. A semiconductor device, comprising:
a semiconductor layer having a first surface in which a plurality of trenches each extending along a first surface direction are arranged along a second surface direction perpendicular to the first surface direction;
a first electrode on a second surface of the semiconductor layer;
a second electrode on the first surface of the semiconductor layer;
a control electrode inside one or more of the trenches;
a third electrode inside each of the trenches, the control electrode being inside each of the trenches between the second and third electrodes;
a first wiring extending along the second surface direction above the first surface of the semiconductor layer at an end in the first surface direction of each of the trenches, and electrically connected to the second electrode and the third electrode in each of the trenches; and
a first contact provided between the semiconductor layer and the first wiring, the first wiring and the third electrode in two or more of the trenches being electrically connected via the first contact, wherein
the plurality of trenches includes first, second, and third trenches,
the first and second trenches are connected to each other via a first connector trench that is provided at an end in the first surface direction of each of the first and second trenches and extends in the second surface direction, and
the third trench extends beyond the end of each of the first and second trenches along the first surface direction.
2. The semiconductor device according to claim 1 ,
the third electrodes inside each of the first and second trenches are connected by portions of the third electrodes through the first connector trench.
3. The semiconductor device according to claim 2 , wherein
the semiconductor layer includes a first conductivity type first semiconductor layer, a second conductivity type second semiconductor layer, and a first conductivity type third semiconductor layer,
the third electrode is electrically insulated from the first semiconductor layer by a first insulating film, and
the control electrode is electrically insulated from:
the second and third semiconductor layers by a second insulating film,
the third electrode by a third insulating film, and
the second electrode by a fourth insulating film.
4. The semiconductor device according to claim 3 , wherein the second electrode contacts the fourth insulating film and the third semiconductor layer.
5. The semiconductor device according to claim 3 , wherein the first conductivity type is n-type, and the second conductivity type is p-type.
6. The semiconductor device according to claim 2 , wherein the third electrode is electrically connected to the second electrode.
7. The semiconductor device according to claim 1 , further comprising:
a second wiring extending along the second surface direction above the first surface of the semiconductor layer between the first wiring and the second electrode and electrically connected to the control electrode.
8. The semiconductor device according to claim 1 , wherein
the semiconductor layer includes a second conductivity type semiconductor layer surrounding the first, second, and third trenches and having an outer edge including a first side extending along the first surface direction, a second side extending along the second surface direction, and a corner connecting the first and second sides, and
the end of each of the first and second trenches is provided at the corner of the outer edge.
9. The semiconductor device according to claim 1 , wherein the first connector trench is directly connected to the first trench and the second trench.
10. The semiconductor device according to claim 2 , wherein an upper surface of the third electrode in the first connector trench is closer to the first surface than a bottom surface of the control electrode in the first trench.
11. The semiconductor device according to claim 1 , further comprising:
a contact portion extending along the first surface direction at a level above the third electrode and electrically connected to the third electrode,
wherein the first contact is in contact with an upper surface of the contact portion.
12. The semiconductor device according to claim 11 , wherein the contact portion is above the first surface of the semiconductor layer.
13. The semiconductor device according to claim 11 , wherein the contact portion and the third electrode in the second trench are aligned in the first surface direction.
14. The semiconductor device according to claim 1 , wherein the first wiring and the third electrode in each of the first and second trenches are electrically connected via the first contact.