Structure for multiple sense amplifiers of memory device

1. A memory device, comprising:

at least one reference cell having a first terminal coupled to a ground; and

a plurality of sense amplifiers each having a first terminal and a second terminal, wherein the first terminal is coupled to one of a plurality of first data lines, and the second terminal is coupled to a second terminal of the at least one reference cell,

wherein the at least one reference cell has a resistance value that is associated with a number N of the plurality of sense amplifiers.

2. The memory device of claim 1 , further comprising:

a plurality of data cells coupled to the plurality of first data lines, wherein the plurality of data cells have a first resistance value R 1 corresponding to a low logic state and a second resistance value R 2 corresponding to a high logic state;

wherein the at least one reference cell has the resistance value equal to (R 1 +R 2 )/2N.

3. The memory device of claim 1 , wherein currents provided to the second terminals of the plurality of sense amplifiers are the same.

4. The memory device of claim 1 , wherein currents provided to the plurality of sense amplifiers flow through the at least one reference cell.

5. The memory device of claim 1 , wherein the at least one reference cell comprises:

a plurality of reference cells;

wherein the second terminal of each of the plurality of sense amplifiers is coupled to one of the plurality of reference cells;

wherein the second terminals of the plurality of sense amplifiers are coupled together.

6. The memory device of claim 1 , wherein the at least one reference cell comprises:

a plurality of reference cells;

wherein the memory device further comprises:

a multiplexer coupled between the plurality of reference cells and the second terminals of the plurality of sense amplifiers, wherein the multiplexer is configured to pass, in response to a select signal, currents provided to the plurality of sense amplifiers to flow through one of the plurality of reference cells.

7. The memory device of claim 1 , wherein the at least one reference cell comprises:

a plurality of reference cells;

wherein the memory device further comprises:

a plurality of multiplexers each coupled between one of the plurality of sense amplifier and a portion of the plurality of reference cells,

wherein each of the plurality of multiplexers is configured to couple, in response to one of a plurality of first signals, one of the plurality of reference cells to the second terminal of one of the plurality of sense amplifiers.

8. The memory device of claim 7 , wherein each one of the plurality of reference cells comprises:

at least one magnetic tunnel junction (MTJ) memory cell and a transistor coupled thereto;

wherein the transistor couples, in response to a second signal, the at least one magnetic tunnel junction memory cell to one of the plurality of multiplexers through a second data line.

9. The memory device of claim 1 , wherein the at least one reference cell further comprises:

a plurality of reference cells;

wherein the memory device further comprises:

a multiplexer coupled between the plurality of reference cells and the second terminal of a first sense amplifier of the plurality of sense amplifier, wherein the multiplexer is configured to select, in response to a select signal, one of the plurality of reference cells;

wherein the plurality of reference cells, the multiplexer, and the first sense amplifier are included in a memory column, and the memory device circuit further comprises a plurality of the memory columns.

10. A memory device, comprising:

a plurality of sense amplifiers each configured to compare a first signal and a second signal that are received separately at a first terminal and a second terminal of each of the plurality of sense amplifiers; and

at least one reference cell coupled to the second terminals of the plurality of sense amplifiers through a plurality of first data lines, wherein the plurality of first data lines are coupled to each other at a node,

wherein a resistance of the at least one reference cell is associated with a number of the plurality of sense amplifiers.

11. The memory device of claim 10 , wherein the at least one reference cell comprises:

a plurality of reference cells;

wherein the memory device further comprises:

a multiplexer coupled between the node and the plurality of reference cells, wherein the multiplexer is configured to electrically couple, in response to a select signal, one of the plurality of reference cells to the node.

12. The memory device of claim 11 , wherein currents provided to the plurality of sense amplifiers flow through a selected one of the plurality of reference cells, and

the selected one reference cell has a resistance associated with a number of the plurality of sense amplifiers.

13. The memory device of claim 10 , wherein the at least one reference cell comprises:

a plurality of reference cells each coupled to the node.

14. The memory device of claim 10 , wherein the at least one reference cell comprises:

a plurality of reference cells;

wherein the memory device further comprises:

a plurality of multiplexers each coupled to one of the plurality of sense amplifiers through the node, and each coupled to a portion of the plurality of reference cells through a plurality of second data lines,

wherein each of the plurality of multiplexers is configured to selectively couple, in response to one of a plurality of first signals, a first line of the plurality of second data lines to the node, and

one of the plurality of reference cells is further coupled to, in response to a second signal, the first line of the plurality of second data lines.

15. The memory device of claim 14 , wherein each of the plurality of reference cells comprises:

a plurality of pairs of a magnetic tunnel junction (MTJ) memory cell and a transistor, wherein each of the transistors in the plurality of pairs is coupled to a word line to receive the second signal.

16. A method, comprising:

selecting, in responses to a plurality of first signals, by a plurality of multiplexers, a plurality of data lines to be coupled to terminals of a plurality of sense amplifiers; and

selectively conducting, in response to a plurality of second signals, a plurality of reference cells to the plurality of data lines,

wherein each of the plurality of reference cells comprises a plurality of pairs of a magnetic tunnel junction (MTJ) memory cell and a transistor, wherein the transistors in the plurality of pairs are coupled to a plurality of word lines to receive the plurality of second signals.

17. The method of claim 16 , further comprising:

obtaining the resistance values of the plurality of reference cells; and

generating the plurality of first signals and the plurality of second signals based on the minimum variation of resistance values of the plurality of reference cells.

18. The method of claim 16 , wherein the plurality of multiplexers are coupled together at a node.

19. The method of claim 16 , wherein selectively conducting the plurality of reference cells to the plurality of data lines comprises:

conducting a first cell of the plurality of reference cells to a first multiplexer of the plurality of multiplexers; and

conducting a second cell of the plurality of reference cells to a second multiplexer of the plurality of multiplexers;

wherein the first cell is arranged closer to the plurality of sense amplifiers than the second cell.

20. The memory device of claim 10 , wherein the at least one reference cell comprises:

a plurality of reference cells;

wherein the memory device further comprises:

a plurality of multiplexers each coupled to one of the plurality of sense amplifiers through the node and each coupled to a portion of the plurality of reference cells through a plurality of second data lines.