III-Nitride transistor with a cap layer for RF operation
This disclosure describes the structure of a transistor that provides improved performance by reducing the off-state capacitance between the source and the drain by using a cap layer to extend the electrical distance between the gate and the source and drain contacts. In certain embodiments, a dielectric layer may be disposed between the gate electrode and the cap layer and vias are created in the dielectric layer to allow the gate electrode to contact the cap layer at select locations. In some embodiments, the gate electrode is offset from the cap layer to allow a more narrow cap layer and to allow additional space between the gate electrode and the drain contact facilitating the inclusion of a field plate. The gate electrode may be configured to only contact a portion of the cap layer.
1. A semiconductor structure for use in a III-Nitride (III-N) semiconductor device, comprising: a channel layer; a barrier layer disposed on the channel layer, wherein electrons are formed at an interface between the channel layer and the barrier layer; a source contact and a drain contact disposed over the channel layer; a cap layer disposed between the source contact and the drain contact, which does not make contact with the source contact and the drain contact, and disposed above the channel layer in a height direction; and a gate electrode, wherein the gate electrode contacts a portion of the cap layer, less than an entirety of the cap layer, wherein an active region is defined as a region between the source contact and the drain contact, and wherein the gate electrode is offset in a second direction, perpendicular to a source-drain direction and the height direction such that at least a portion of the gate electrode is disposed outside the active region.
2. The semiconductor structure of claim 1 , wherein the cap layer comprises Mg-doped GaN, AlGaN or InGaN.
3. The semiconductor structure of claim 1 , wherein the cap layer extends in the second direction beyond the active region.
4. A semiconductor structure for use in a III-Nitride (III-N) semiconductor device, comprising:
a channel layer;
a barrier layer disposed on the channel layer, wherein electrons are formed at an interface between the channel layer and the barrier layer;
a source contact and a drain contact disposed over the channel layer;
a cap layer disposed between the source contact and the drain contact, and disposed above the channel layer;
a gate electrode, wherein the gate electrode contacts a portion of the cap layer, less than an entirety of the cap layer; and a dielectric layer disposed between the cap layer and the gate electrode, wherein at least one via is disposed in the dielectric layer to allow the gate electrode to contact the portion of the cap layer,
wherein the cap layer comprises a first portion extending in a second direction, perpendicular to a source-drain direction, with one or more side regions that extend from the first portion in the source-drain direction, and wherein the at least one via allows the gate electrode to contact the at least one side region.
5. The semiconductor structure of claim 4 , wherein the cap layer extends beyond the gate electrode by at least 0.3 μm toward the source contact and/or drain contact.
6. The semiconductor structure of claim 4 , wherein the at least one side region extends toward the source contact.
7. The semiconductor structure of claim 4 , wherein the gate electrode is disposed above the at least one side region.
8. The semiconductor structure of claim 4 , wherein a dimension of the via in the source-drain direction is greater than a dimension of the first portion in the source-drain direction.
9. The semiconductor structure of claim 4 , further comprising a field plate disposed between the gate electrode and the drain contact and disposed above the first portion of the cap layer, wherein the dielectric layer is disposed between the cap layer and the field plate.
10. The semiconductor structure of claim 9 , wherein the field plate does not overlap the gate electrode.
11. The semiconductor structure of claim 10 , wherein the field plate is electrically connected to the source contact.
12. The semiconductor structure of claim 4 , wherein the portion comprises less than 90% of the cap layer.
13. A semiconductor structure for use in a III-Nitride (III-N) semiconductor device, comprising:
a channel layer;
a barrier layer disposed on the channel layer, wherein electrons are formed at an interface between the channel layer and the barrier layer;
two or more source contacts and a corresponding number of drain contacts disposed over the channel layer, wherein non-active regions are disposed between adjacent source contacts and/or adjacent drain contacts; and wherein the source contacts and corresponding drain contacts are separated by active regions;
a cap layer that is disposed above the barrier layer; and
a gate electrode disposed in a region between two non-active regions above the cap layer and contacting the cap layer only in the region between the two non-active regions, and wherein the cap layer extends to the active regions.
14. The semiconductor structure of claim 13 , wherein the non-active regions are created by ion implantation of N, F or any other suitable species into the barrier layer and the channel layer.
15. The semiconductor structure of claim 13 , wherein the non-active regions are areas where the barrier layer and the channel layer have been etched.
16. The semiconductor structure of claim 13 , further comprising a dielectric layer disposed above the cap layer, wherein vias are created in the dielectric layer to allow the gate electrode to contact the cap layer in the region between the two non-active regions.
17. The semiconductor structure of claim 13 , further comprising a field plate disposed above the cap layer in the active regions.
18. The semiconductor structure of claim 17 , wherein the field plate is electrically connected to the source contacts.
19. The semiconductor structure of claim 4 , wherein the cap layer comprises Mg-doped GaN, AlGaN or InGaN.
20. The semiconductor structure of claim 13 , wherein the cap layer comprises Mg-doped GaN, AlGaN or InGaN.
21. The semiconductor structure of claim 1 , wherein the cap layer extends in the second direction beyond the active region and an entirety of the gate electrode is disposed outside the active region.
22. The semiconductor structure of claim 1 , wherein the cap layer is not in contact with the source contact or the drain contact.
23. A semiconductor structure for use in a III-Nitride (III-N) semiconductor device, comprising:
a channel layer;
a barrier layer disposed on the channel layer, wherein electrons are formed at an interface between the channel layer and the barrier layer;
a source contact and a drain contact disposed over the channel layer;
a cap layer disposed between the source contact and the drain contact, and disposed above the channel layer;
a gate electrode, wherein the gate electrode contacts a portion of the cap layer, less than an entirety of the cap layer; and a dielectric layer disposed between the cap layer and the gate electrode, wherein a plurality of vias are disposed in the dielectric layer to allow the gate electrode to contact the portion of the cap layer.
24. The semiconductor structure of claim 23 , further comprising a field plate disposed between the gate electrode and the drain contact, wherein the dielectric layer is disposed between the cap layer and the field plate.
25. The semiconductor structure of claim 24 , wherein the field plate does not overlap the gate electrode.
26. The semiconductor structure of claim 25 , wherein the field plate is electrically connected to the source contact.
27. The semiconductor structure of claim 23 , wherein the portion comprises less than 90% of the cap layer.